MICROWAVE FET IC Search Results

MICROWAVE FET IC Result Highlights (5)

Part	Manufacturer	Description
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL1G07FU	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC

MICROWAVE FET IC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED	OCR Scan	-45dBc 4450-45SL TIM4450-45SL VDS-10V, IDS-9600mfl,	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED	OCR Scan	-45dBc TIM4450-45SL VDS-10V, IDS-9600mfl,	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band	OCR Scan	NEZ3642-4D,	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM5964-4-251 RF PERFORMANCE SPECI ICATIONS Ta=25 °C SYMBOL CONDITION UNIT CHARACTERISTICS PldB dBm Output Power at ldB Gain Compression Point VDD=10V F = 5.9-6.75GHz dB Power Gain at ldB	OCR Scan	TIM5964-4-251 75GHz 2-11D1B)	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM5964-4-251 RF PERFORMANCE SPECI ICATIONS Ta=25 °C SYMBOL CONDITION UNIT CHARACTERISTICS PldB dBm Output Power at ldB Gain Compression Point VDD=10V F = 5.9-6.75GHz dB Power Gain at ldB	OCR Scan	TIM5964-4-251 75GHz 2-11D1B)	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band	OCR Scan	NEZ3642-4D, NEZ4450-4D, NEZ5964ter	PDF
Microwave Semiconductor Abstract: TIM1414-4-252 Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB	OCR Scan	TIM1414-4-252 120mA -120fiA case-120fiA Microwave Semiconductor TIM1414-4-252	PDF
S9G66A Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB	OCR Scan	S9G66A S9G66A	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB	OCR Scan	120mA -120fiA	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB	OCR Scan	120mA -120fiA	PDF
MGF2415 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The MGF2415A, power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band ampli fiers. FEATURES • High output power P1dB = 27.5 dBm TYP. @ 14.5 GHz	OCR Scan	MGF2415A MGF2415A, MGF2415	PDF
TIM6472 Abstract: TIM6472-45SL Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEM ICO NDUCTOR TIM6472 — 45SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN G ,da = 8.0 dB at 6.4 GHz to 7 2 GHz IMa = - 45 dB c at Po = 35.5 dBm. Single Carrier Level ■ HIGH POWER	OCR Scan	TIM6472 ---TIM6472-45SL- TIM6472 TIM6472-45SL	PDF
Untitled Abstract: No abstract text available Text: MODULE GaAs FET AMPLIFIERS Añfc MLA 2900-000 SERIES MICROWAVE COMMON MODULE BROADBAND GaAs FET AMPLIFIERS 2.0 TO 18.0GHz EATURES MiCM 20 Compatible Def Stan & CECC Specifications Direct 50ohm Microstrip Interfaces Broad Frequency Ranges Wide Dynamic Ranges	OCR Scan	50ohm 18GHz 20GHz DS91-1	PDF
TIM5964-16SL-081 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc at Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED HIGH POWER	OCR Scan	TIM5964-16SL-081 -45dBc TIM5964-16SL-081	PDF

RPX 200 Abstract: No abstract text available Text: RAYTTTTöN" COV MXCROUJAVE 70 & Raytheon Company Special Microwave Devices Operation v 75T?E21 □□□□401 □ 617 393 7300 Bearfoot Road ' Northboroligh, M A O 1532 - O f 7597221 RAYTHEON ICO» MICROWAVE £ 760-00401 RPX 6000 Series X-Band Power GaAs FET s	OCR Scan	RPX6000 RPX6030, RPX6033, RPX6035 RPX 200	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C	OCR Scan	TIM0910-15L 30dBm 2-11C1B)	PDF
TIM0910-15L Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C	OCR Scan	TIM0910-15L 30dBm 145mA 2-11C1B) TIM0910-15L	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T\|add = 37% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB = 8.0dB at 5.9 to 6.4GHz	OCR Scan	-45dBc TIM5964-35SL TIM5964-35SL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000	OCR Scan	TIM0910-15L 30dBm 145mA 2-11C1B)	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-16SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH EFFICIENCY IM3 = - 45 dBc at Po = 31.5 dBm, qadd = 31 % at 7.1 GHz to 7. 9 GHz Single Carrier Level ■ HIGH GAIN HIGH POWER	OCR Scan	TIM7179-16SL 31UTE 2-16G1B) TIM7179-16SL------------POWER	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA I MICROWAVE POWER GaAs FET MICROWAVE SEM ICONDUCTO R- TIM0910 8 TECHNICAL DATA FEATURES: • HIGH POWER PldB =39.5 dBm at 9.5 GHz to 10.5 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G*\|dB = 6-0 dB at 9.5 GHz to 10.5 GHz ■ HERMETICALLY SEALED PACKAGE	OCR Scan	TIM0910 TIM091	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.	OCR Scan	NE960R5 NE961R500 NE960R500 NE960R575 NE962R575 P14387E	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.	OCR Scan	NE960R2 NE961R200 NE960R200 NE960R275 P13775E	PDF
degl Abstract: MGF2445 L to Ku band GaAs Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445 MICROWAVE POWER GaAs FET DESCRIPTION The M G F2445, pow er GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li fiers. FEATURES • High o u tp u t power • High pow er gain	OCR Scan	MGF2445 MGF2445, degl MGF2445 L to Ku band GaAs	PDF

MICROWAVE FET IC Search Results

MICROWAVE FET IC Result Highlights (5)

MICROWAVE FET IC Datasheets Context Search

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Microwave Semiconductor

S9G66A

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MGF2415

TIM6472

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TIM5964-16SL-081

RPX 200

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TIM0910-15L

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