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    S9G66A Search Results

    S9G66A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S9G66A Toshiba FET, Microwave Power GaAs FET Transistor, ID 1.4 A Scan PDF
    S9G66A Toshiba MICROWAVE POWER GaAs FET Scan PDF

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    Abstract: No abstract text available
    Text: TO SH IBA M I C R O WA V E P O W E R GaAs FET MICROW A VE SEMICONDUCTOR S9G66A T E C H N IC A L D A T A FEATURES •HIGH ■NON-MATCHED POWER P1dB=30.5dBm ■ HIGH at 2. 7GHz ■HERMETICALLY GAIN G1dB=12dB T YPE at SEALED PACKAGE 2 . 7 GHz RF PERFORMANCE SPECIFICATIONS


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    S9G66A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB


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    PDF S9G66A S9G66A