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    NE961R200 Search Results

    NE961R200 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE961R200 NEC 0.2 W X, Ku-BAND POWER GaAs MES FET Original PDF
    NE961R200-AZ NEC IC FET MISC x AND KU-BAND POWER GAAS MES FET CHIP Original PDF

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    NE960R2

    Abstract: NE960R200 NE960R275 NE961R200
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear


    Original     		PDF NE960R2 NE961R200 NE960R200 NE960R275

    NE960R2

    Abstract: NE960R200 NE960R275 NE961R200
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear


    Original     		PDF NE960R2 NE961R200 NE960R200 NE960R275

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.


    OCR Scan     		PDF NE960R2 NE961R200 NE960R200 NE960R275 P13775E