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    Toshiba America Electronic Components TIM6472-12

    RF Components (Alt: TIM6472-12)
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    EBV Elektronik TIM6472-12 26 Weeks 3
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    TIM6472 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIM6472-12UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM6472-14L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM6472-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM6472-16 Toshiba TIM6472 - TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM6472-16EL Toshiba TIM6472 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power Original PDF
    TIM6472-16L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM6472-16SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM6472-16SL Toshiba Scan PDF
    TIM6472-16UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM6472-25UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM6472-30L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM6472-30SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM6472-30SL Toshiba Microwave Power Gaas Fet Scan PDF
    TIM6472-30UL Toshiba TIM6472 - C-Band Power GaAs IMFETs, TIM6472-30UL Original PDF
    TIM6472-35SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM6472-35SL Toshiba Microwave Power Gaas Fet Scan PDF
    TIM6472-4 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM6472-45SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM6472-45SL Toshiba Scan PDF
    TIM6472-4L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF

    TIM6472 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM6472-16UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz


    Original     		PDF TIM6472-4SL TIM6472-4UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-30UL 7-AA05A)

    TIM6472-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 44.5 dBm at 6.4 GHz to 7.2 GHz


    Original     		PDF TIM6472-30L Pow25° 2-16G1B) MW50950196 TIM6472-30L

    TIM6472-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM6472-16UL TIM6472-16UL

    TIM6472-6UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM6472-6UL TIM6472-6UL

    TIM6472-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM6472-4UL TIM6472-4UL

    TIM6472-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM6472-25UL TIM6472-25UL

    TIM6472-12UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-12UL TIM6472-12UL

    TIM6472-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-4UL TIM6472-4UL

    TIM6472-60SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level „ HIGH POWER P1dB=48.0dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=7.5dB at 6.4GHz to 7.2GHz


    Original     		PDF TIM6472-60SL IDS13 TIM6472-60SL

    TIM6472-8SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=7.5dB at 6.4GHz to 7.2GHz


    Original     		PDF TIM6472-8SL TIM6472-8SL

    TIM6472-16SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=7.0dB at 6.4GHz to 7.2GHz


    Original     		PDF TIM6472-16SL TIM6472-16SL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM6472-6UL

    TIM6472-30SL

    Abstract: PO43
    Text: MICROWAVE POWER GaAs FET TIM6472-30SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=7.0dB at 6.4GHz to 7.2GHz


    Original     		PDF TIM6472-30SL TIM6472-30SL PO43

    TIM6472-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-4UL TIM6472-4UL

    TIM6472-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz


    Original     		PDF TIM6472-35SL TIM6472-35SL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-4UL

    TIM6472-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM6472-4 2-11D1B) MW50840196 TIM6472-4

    tim6472

    Abstract: TIM6472-16L
    Text: TOSHIBA TIM6472-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 6.4 GHz to 7.2 GHz


    Original     		PDF TIM6472-16L 2-16G1B) MW50930196 TIM6472-16L tim6472

    50920-1

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM6472-16 TIM6472-16 50920-1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 dB c at Po = 28.5 dBm, - Single carrier level • High power - P idB = 39 dBm at 6.4 GHz to 7.2 GHz


    OCR Scan     		PDF TIM6472-7L 2-11D1B) at260 MW50870196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM6472-4SL 2-11D1B) MW50860196

    285-2 MAG IC

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM6472-8 TECHNICAL DATA FEATURES: • HIGH POWER P*|dB = 39 dBm at 6.4 GHz to 7.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GldB = 7.0 dB at 6.4 GHz to 7.2 GHz ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM6472-8 TIM6472-8---------------------POWER TIM6472-8 285-2 MAG IC