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    MICRON TECHNOLOGY Search Results

    MICRON TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet
    CS-SASDDP8282-000.5 Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m Datasheet
    CS-SASDDP8282-001 Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet

    MICRON TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29F128G08AJAAAWP-IT

    Abstract: MT29F128G08AJAAAWP MT29F32G08ABCABH1-10IT MT29F32G08ABCABH1 MT29F32G08AB MT29F128G08AJAAA M73A 256gb nand flash mt29f128g08 MT29F128G08A
    Text: MT29F32G08ABCABH1-10IT - Micron Technology, Inc. Page 1 Micron Global Investor Relations News & Events Jobs Contact Micron Login PRODUCTS & SUPPORT ABOUT MICRON How To Buy Sign up for Access Enter Search Term or Part Number MY WORKSPACE MT29F32G08ABCABH1-10IT


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    PDF MT29F32G08ABCABH1-10IT MT29F32G08ABCABH1-10IT 100-ball 32/64/128/256Gb Down09/2010 flash/mass-storage/mt29f32g08abcabh1-10it MT29F128G08AJAAAWP-IT MT29F128G08AJAAAWP MT29F32G08ABCABH1 MT29F32G08AB MT29F128G08AJAAA M73A 256gb nand flash mt29f128g08 MT29F128G08A

    Micron Technology

    Abstract: No abstract text available
    Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and


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    PDF 20Note/DRAM/TN4102 TN-41-04: TN-41-13: TN-46-02: TN-46-06: TN-46-11: TN-46-14: TN-47-19: TN-47-20: Micron Technology

    dram structure

    Abstract: 2240 6T SRAM micron sram
    Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they


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    PDF INFMP200206 dram structure 2240 6T SRAM micron sram

    XH018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron


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    PDF XH018 XH018 18-micron

    PC/104

    Abstract: No abstract text available
    Text: MICRON MICRON MICRON MICRON Low power 200MHz PR266 or 250MHz (PR366) CPU options Up to 256MB SDRAM SST ATA-Disk Chip and CompactFlash support Integrated AGP (x2) Trident CyberBlade Graphics for LCD and CRT 10/100Base-T Ethernet Soundblaster compatible Audio (optional)


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    PDF 200MHz PR266) 250MHz PR366) 256MB 10/100Base-T PC/104 PC/104+ PC/104

    Infineon automotive semiconductor technology roadmap

    Abstract: Infineon technology roadmap micron sram
    Text: Joint News Release by Infineon Technologies and Micron Technology Infineon and Micron Announce Partnership to Develop Reduced Latency DRAM Munich, Germany / Boise, Idaho, USA – May 30, 2001 – Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced that


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    PDF 600Mbit/sec/pin INFMP200105 Infineon automotive semiconductor technology roadmap Infineon technology roadmap micron sram

    memory 9652

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net


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    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


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    PDF XT018 XT018 18-micron rpp1k1

    image sensor micron

    Abstract: micron sensor micron HEADBOARD Micron Imaging Demo2 Camera Board Micron Sensor CMOS image sensor usb Contact Image Sensor Head Micron micron CMOS Camera ADAPTEC block diagram OF pentium 2
    Text: Image Sensor Demo System Kits Introduction Image Sensor Demo System Kits Introduction Micron’s CMOS image sensor demo kits are USB-powered camera boards that enable easy testing and characterization of Micron sensors. The Micron Imaging demonstration system family supports the full line of Micron’s CMOS image sensor products.


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    PDF 09005aef82ca4ad2/Source: 09005aef82ca8484 image sensor micron micron sensor micron HEADBOARD Micron Imaging Demo2 Camera Board Micron Sensor CMOS image sensor usb Contact Image Sensor Head Micron micron CMOS Camera ADAPTEC block diagram OF pentium 2

    MT29F32G08AFACA

    Abstract: MT29F32G08 MT29F32G0
    Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron


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    PDF 48-pin MT29F32G08AFACAVVP MT29F32G08AFACAVI/PES MT29F32G08AFACA MT29F32G08 MT29F32G0

    MT29F32G08AFACAWP-IT

    Abstract: MT29F32G08AFACAWP-ITES MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP
    Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron


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    PDF 48-pin MT29F32G08AFACAWP-ItC MT29F32G08AFACAWP-ITES MT29F32G08AFACAWP-IT MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP

    Untitled

    Abstract: No abstract text available
    Text: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View


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    PDF MT2LSDT432U, MT4LSDT832UD 100-pin,

    nd02d2

    Abstract: No abstract text available
    Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design


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    PDF VGC450/VGC453 VGC450/453 nd02d2

    dram 88 pin

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T


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    PDF MT12D88C25636 88-Pin dram 88 pin

    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


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    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16 MEG X 32 SDRAM DIMM MICRON' I TECHNOLOGY, INC. M T 4L S D T 1632U D SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View


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    PDF 100-pin, 096-cycle 1632U

    4LC4M

    Abstract: No abstract text available
    Text: 4’8 M EGx32 DRAM DIMMs MICRON I TECHNOLOGY, INC. D P A |\/| MT2LDT432U X , MT4LDT832U (X) _ _ _ I WI f j | j I I I I •I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES


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    PDF MT2LDT432U MT4LDT832U 100-pin, 096-cycle 100-Pin 4LC4M

    PT6042

    Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
    Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS


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    PDF VGC450/VGC453 VGC453 VGC450 PT6042 model values for 0.18 micron technology cmos nd02d2

    integrated circuit TL 2262

    Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
    Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology


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    PDF VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology

    PC5004

    Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
    Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz


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    PDF 55-micron PC5004 VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding

    PT6045

    Abstract: VSC370 PT6005
    Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


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    PDF VSC370 85-micron 000fiö T-42-41 PT6045 PT6005

    130 nm CMOS standard cell library

    Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
    Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS


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    PDF VGC450/VGC453 VGC453 VGC450 130 nm CMOS standard cell library 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1

    VGT300039

    Abstract: PT6045 VGT300022 PT6005
    Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


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    PDF T3flfl34? VGT350/VGT353 85-micron VGT350/353 VGT300039 PT6045 VGT300022 PT6005

    Untitled

    Abstract: No abstract text available
    Text: MICRON' I 4 MEG x 16 E D O D R A lV l TECHNOLOGY, INC. n P A M MT4LC4M16R6 MT4LC4M16N3 U r iM IV I For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply


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    PDF MT4LC4M16R6 MT4LC4M16N3 096-cycle 50-PlVl 50-PIN