micron sram
Abstract: No abstract text available
Text: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first
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35-MICRON
25-Micron
CY7C1021,
35-micron
ahe10
micron sram
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Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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dram structure
Abstract: 2240 6T SRAM micron sram
Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they
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INFMP200206
dram structure
2240
6T SRAM
micron sram
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XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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Infineon automotive semiconductor technology roadmap
Abstract: Infineon technology roadmap micron sram
Text: Joint News Release by Infineon Technologies and Micron Technology Infineon and Micron Announce Partnership to Develop Reduced Latency DRAM Munich, Germany / Boise, Idaho, USA – May 30, 2001 – Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced that
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600Mbit/sec/pin
INFMP200105
Infineon automotive semiconductor technology roadmap
Infineon technology roadmap
micron sram
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Micron NAND
Abstract: design manual atmel atl ATL25 ATL35
Text: Below are the ATL25 0.25 micron , ALT35 (0.35 micron) and ATL60/ATLS60 (0.6 micron) design manual sections, followed by five sections which are common to all Atmel design manuals (Design, Test, Packaging, Q&R, and Military & Aerospace). ASIC Checklists Kickoff Meeting Checklist - V 3.2
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ATL25
ALT35
ATL60/ATLS60
ATL25
Micron NAND
design manual
atmel atl
ATL35
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Andrew
Abstract: RF 8SF
Text: Inside the New Computer Industry • January 2001 • Andrew Allison The 0.13 micron Race It appears that 0.13 micron gamesmanship is widespread: Despite the fact that I checked the 0.13 micron story twice with Motorola, what that company is really shipping Intelligence, December
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memory 9652
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net
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PC5004
Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz
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55-micron
PC5004
VGC650
VGC6P52
VGC600
IN01D1
NR02D1
QFP 128 bonding
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smd transistor GY
Abstract: No abstract text available
Text: MICRON T ECH NOLOGY INC 17E D • blllSm MICRON I OOOlflbE t.' ■ MT5C2565 883C l M ii'<OGT INC MILITARY SRAM 64K x 4 SRAM WITH OUTPUT ENABLE -— AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 89524
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MT5C2565
M38510
28L/300
blll54t
T-46-23-10
MIL-STD-883
smd transistor GY
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IDT ZBT SRAM 1994
Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
Text: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular
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chn 442
Abstract: chn 437 chn 439 chn 436 lz smd marking
Text: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)
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MT5C6408
M38510/292
28L/300
32L/LCC
C-12A)
MIL-STD-883
chn 442
chn 437
chn 439
chn 436
lz smd marking
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Untitled
Abstract: No abstract text available
Text: MICRON SEM ICONDUCTOR INC b7E D • hlllSHT OODTMTl SSñ ■ MRN PRELIMINARY MICRON B MT5LC128K8D4 REVOLUTIONARY PINOUT 128K x 8 SRAM si i.- rn-mucjon i';c 128K x 8 SRAM SRAM 3.3V OPERATION WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT PIN ASSIGNMENT Top View
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MT5LC128K8D4
32-Pin
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smd transistor marking A13C
Abstract: smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc
Text: MICRON TECHNOLOGY INC 17E J> • blllSMT 0001ÖS2 5 MICRON MT5C6404 883C MILITARY SRAM 16K X 4 SRAM 'T - M W - Z V i o AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89629 • JAN (consult factory for reference number)
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MT5C6404
22L/300
MIL-STD-883
smd transistor marking A13C
smd transistor A6t 12
smd transistor A6t
A6T TRANSISTOR
A6t smd
a6t smd transistor
smd transistor wc
smd transistor A6t 50
C17E
smd transistor wc dc
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smd transistor A6t
Abstract: A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c
Text: 1?E D MICRON TECHNOLOGY INC b l l l S 1^ MICRON « OOOiaiH b MT5C6401 883C HlhN-XCV'.V ISC MILITARY SRAM 64Kx1 SRAM -OS AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86105 • JAN M38510/292 « RAD-tolerance (consult factory)
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MT5C6401
M38510/292
64Kx1
22L/300
T-46-23-r05
MIL-STD-883
smd transistor A6t
A4U marking transistor
A6t smd Transistor
A6T TRANSISTOR
smd transistor A4U
smd transistor A6t 14
SMD TRANSISTOR MARKING A1 T46
smd transistor A6t 50
transistor A6t 45
smd transistor marking a7*c
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blllSM S 000057=5 T4 4 « U R N ADVANCE MICRON ■ 64K KMICOMDUCTOR MC SYNCHRONOUS SRAM M T58LC 64K 18F5 X 18 SYNCHRONOUS SRAM 64Kx 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND LATCHED OUTPUTS FEATURES • • • •
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MT58LC64K18F5
MT58LC64K1IF5
C1993,
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MTSC2568
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC S5E D blllSH T 0003145t, TOT IMRN MT5C2568 32K X 8 SRAM [MICRON H < o -V b -\ 7 > SRAM 32K X 8 SRAM • High speed: 10*, 12*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply
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0003145t,
MT5C2568
28-Pin
27Mteron
DQG34b3
MTSC2568
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CMOS
Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular
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FC025
FC025
25-micron
CMOS
AF32K8AF25
NMOS native pspice model
resistor bsim3
6T SRAM
micron cmos sensor connection
BSIM3
nmos transistor
pmos Vt
bsim3 model
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pic 8259
Abstract: sus_stat_n rtc backup battery circuit 2h48
Text: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two
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MT8LLN22NCNE
21PAD/22NCN
21PAD
22NCN
512KB
64-bit,
pic 8259
sus_stat_n
rtc backup battery circuit
2h48
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 17E5 • tÌlÌS4"Ì 0001630 4 ■ MICRON i ■ MT5C6405 883C I d h i r t ' l . ' B*- 16K x 4 SRAM MILITARY SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD (consult factory for reference number)
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MT5C6405
24L/300
T-46-23-10
MIL-STD-883
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A19T
Abstract: transistor marking A19 a19 t
Text: t» 17E D MICRON TECHNOLOGY INC blllSMI QDG1Ö70 T I ADVANCE MICRON • MT5C1001 883C UCW*XCf.Y MC MILITARY SRAM 1MEG X 1 SRAM ■%-ii OS FEATURES PIN ASSIGNMENT Top View High speed: 25,30,35,45 and 55ns Automatic chip enable power down All inputs and outputs are TTL compatible
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MT5C1001
M1L-STD-883
28L/400
A19T
transistor marking A19
a19 t
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E ]> • blllS^H DOQTSTb 122 ■ MRN ADVANCE MICRON 64K MT58LC64K18A6 18 SYNCHRONOUS SRAM 64K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • • • « • • • • • • • Fast access times: 7,10,12 and 15ns
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MT58LC64K18A6
MT58LC64K18A6EJ-10
MT56LC64K18A6
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Pc 9571
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-5781 gcjones@micron.com Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RECORD RESULTS FOR FOURTH FISCAL QUARTER AND FISCAL YEAR 2000
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marking b7t
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E T> • b lllS M R OOOIbSO ÔT7 ■ MRN MICRON 64K SRAM MODULE X MT8S6432 32 SRAM MODULE 64K X 32 SRAM FEATURES High speed: 15*, 20,25,30 and 35ns High-performance, low-power CMOS process _ Single +5V +10% power supply Easy memory expansion with CE and OE functions
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MT8S6432
64-Pin
marking b7t
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