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    GC355XD7LQ564KX17L Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    5962-86015-000 Renesas Electronics Corporation 64Kx1 SRAM 7187S Visit Renesas Electronics Corporation
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    Murata Manufacturing Co Ltd GC355XD7LQ564KX17L

    CAP CER 0.56UF 630V X7T 2220
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    64KX1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    CY7C4255V

    Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V
    Text: fax id: 5422 CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V PRELIMINARY 8K/16K/32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to


    Original     		PDF CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V 8K/16K/32K/64Kx18 CY7C4255/65/75/85V CY7C42X5V CY7C4255V CY7C4265V CY7C4275V CY7C4285V

    IBM0418A11NLAA

    Abstract: IBM0436A11NLAA
    Text: . Preliminary IBM0436A11NLAA IBM0418A11NLAA 32Kx36 & 64Kx18 SRAM Features • 32Kx36 or 64Kx18 organizations • Registered Outputs • 0.25 Micron CMOS technology • 30 Ohm Drivers • Synchronous Pipeline Mode of Operation with Self-Timed Late Write • Common I/O


    Original     		PDF IBM0436A11NLAA IBM0418A11NLAA 32Kx36 64Kx18 32Kx36 nrrL3325 IBM0418A11NLAA IBM0436A11NLAA

    MR0A16A

    Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
    Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


    Original     		PDF MR0A16A 64Kx16 20-years 44-TSOP 48-BGA MR0A16A SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35

    Untitled

    Abstract: No abstract text available
    Text: In-Circuit Programming of the MX26C1024A 1M-Bit 64Kx16 CMOS Multiple-Time-Programmable ROM Application Note 09/16/97 -This application note describes how to erase and program the MX26C1024A, 1M-bit MTP


    Original     		PDF MX26C1024A 64Kx16) MX26C1024A, 12-volts 500ms

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    K6R1016C10

    Abstract: k6r1016c1c
    Text: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.


    Original     		PDF K6R1016C1C-C/C-L, K6R1016C1C-I/C-P 64Kx16 48-fine K6R1016C1C-Z K6R1016C1C-F 80/Typ. 25/Typ. K6R1016C10 k6r1016c1c

    Untitled

    Abstract: No abstract text available
    Text: K6R1016V1C-C/C-L, K6R1016V1C-I/C-P for AT&T CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R1016V1C-C/C-L, K6R1016V1C-I/C-P 64Kx16 48-fine K6R1016V1C-Z K6R1016V1C-F I/O16 002MIN

    CY7C4275V

    Abstract: CY7C4285V CY7C42X5V
    Text: fax id: 5422 CY7C4275V CY7C4285V PRELIMINARY 32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4275V/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to


    Original     		PDF CY7C4275V CY7C4285V 32K/64Kx18 CY7C4275V/85V CY7C42X5V CY7C4275V CY7C4285V

    29F100T

    Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100

    km6161000bl7

    Abstract: No abstract text available
    Text: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6161OOOBL 64Kx16 550MW 660mW I/01-I/08 KM6161000BLT/LT-L: 400mil KM6161000BLR/LR-L: KM6161000BL/L-L km6161000bl7

    G530T

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a


    OCR Scan     		PDF 64Kx16 486/Pentium 15ns/20ns/25ns 67MHz Mb75Qflfl GG0b313 10H07-11-MAY95 HY6716110/111 4b750flfl 1DH07-11-MAY95 G530T

    CY7C4255V

    Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC QO-17
    Text: CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V V CYPRESS 32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfac­ es. All are 18 bits wide and are pin/functionally compatible to


    OCR Scan     		PDF CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V 32K/64Kx CY7C4255V) CY7C4265V) CY7C4275V) CY7C4285V) 100-MHz 10-ns CY7C4255V CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC QO-17

    metal case REGULATOR IC 7812 pin diagram

    Abstract: CY7C4275 CY7C4285 CY7C42X5
    Text: fax id: 5416 ^;aaazgg st CY7C4275 CY7C4285 PRELIMINARY ; U I F lm c b ti 32K/64Kx18 1 Meg Deep Sync FIFOs Functional Description Features H ig h-speed , low -pow er, first-in first-o u t F IF O m em o ries 32K x 18 (C Y 7 C 42 75 ) 64K x 18 (C Y 7 C 42 85 )


    OCR Scan     		PDF CY7C4275 CY7C4285 32K/64Kx18 CY7C4275) CY7C4285) 100-MHz metal case REGULATOR IC 7812 pin diagram CY7C4285 CY7C42X5

    Untitled

    Abstract: No abstract text available
    Text: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a


    OCR Scan     		PDF EDI8M1665C 64Kx16 EDI8M1665C 1024K-bit 64Kx4 64Kx4) 64Kx16 28Kx8 256Kx4 I8M1665C

    Untitled

    Abstract: No abstract text available
    Text: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a


    OCR Scan     		PDF EDI8M1664C50/60/70/85/100 64Kx16 EDI8M1664C 32Kx8 32Kx16bitseach. DQ8-DQ15) EDI8M81664C EDI8U1664C50/60/70/85/100

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5416 CY7C4275 CY7C4285 32K/64Kx18 Deep Sync II FIFOs Featu res High-speed, low-power, first-in first-out FIFO memories 32K x 18 (CY7C4275) 64K x 18 (CY7C4285) 0.5 micron CMOS for optimum speed/power High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		PDF CY7C4275 CY7C4285 32K/64Kx18 CY7C4275) CY7C4285) 100-MHz 68-pin 64-pin CY7C4275/85are

    Untitled

    Abstract: No abstract text available
    Text: / T T S G S 'T H O M S O N ^ 7 # GfflDIIMilLIOTMOISi M 27V102 LOW VOLTAGE 1 Megabit 64Kx16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V > FAST ACCESS TIME: 90ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100|jA


    OCR Scan     		PDF 27V102 64Kx16) FDIP40W PLCC44 M27V102 M27C1024 M27V102 TSQP40

    Untitled

    Abstract: No abstract text available
    Text: Issue 2.0: July 1069 MS1664BCX-25/35 64K MS1664BCX X 16 BiCMOS SRAM Module PRELIMINARY INFORMATION 1,048,576 High Speed BiCMOS Static RAM Module. Features Pin Definition Very Fast Access Times of 25/35 nS User Configuration at, 64Kx16,128Kx8 or 256Kx4 Industry Standard 40 Pin Ceramic DIP footprint


    OCR Scan     		PDF MS1664BCX-25/35 MS1664BCX 64Kx16 128Kx8 256Kx4 16bit 2880mW 2020mW 1590mW MS16644BCXMB-25

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM718B86 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718B86 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support 66MHz of


    OCR Scan     		PDF KM718B86 64Kx18 18-Bit KM718B86 66MHz ofKM718B86

    Untitled

    Abstract: No abstract text available
    Text: 64Kx18 Synchronous SRAM KM718B86 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. The KM718B86 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support 66MHz of Intel secondary caches. It is organized as 65,536 words


    OCR Scan     		PDF 64Kx18 KM718B86 18-Bit KM718B86 66MHz

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 6 7 1 6 1 0 0 /1 0 1 64K x 16 Bit SYNCHRONOUS CMOS SRAM P RELIM IN ARY DESCRIPTION This device integrates high-speed 64Kx16 SR A M core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge


    OCR Scan     		PDF 64Kx16 486/Pentium 6ns/9ns/12ns 75MHz 486/Pe 10H05-11-MAY95 HY6716100/101 1DH05-11-MAY95 HY6716100C