Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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MT29F32G08AFACA
Abstract: MT29F32G08 MT29F32G0
Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron
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48-pin
MT29F32G08AFACAVVP
MT29F32G08AFACAVI/PES
MT29F32G08AFACA
MT29F32G08
MT29F32G0
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MT29F32G08AFACAWP-IT
Abstract: MT29F32G08AFACAWP-ITES MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP
Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron
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48-pin
MT29F32G08AFACAWP-ItC
MT29F32G08AFACAWP-ITES
MT29F32G08AFACAWP-IT
MT29F32G08AFA
MT29F32G08
MT29F32G08AFACAWP
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PC/104
Abstract: No abstract text available
Text: MICRON MICRON MICRON MICRON Low power 200MHz PR266 or 250MHz (PR366) CPU options Up to 256MB SDRAM SST ATA-Disk Chip and CompactFlash support Integrated AGP (x2) Trident CyberBlade Graphics for LCD and CRT 10/100Base-T Ethernet Soundblaster compatible Audio (optional)
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200MHz
PR266)
250MHz
PR366)
256MB
10/100Base-T
PC/104
PC/104+
PC/104
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MT29F128G08AJAAAWP-ITES
Abstract: MT29F128G08AJAAAWP-IT MT29F128G08AJAAAWP-I MT29F128G08AJAAA MT29F128G08AJAAAWP MT29F128 mt29f128g08 MT29F128G
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash 110 : Common Mmmfacturer: Micron Mode Operation: Single Die
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128Gb
48-pin
Exterm11:
3216411281256Gb
MT29F128G08AJAAAWP-I
MT29F128G08AJAAAWP-ITES
MT29F128G08AJAAAWP-IT
MT29F128G08AJAAA
MT29F128G08AJAAAWP
MT29F128
mt29f128g08
MT29F128G
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image sensor micron
Abstract: micron sensor micron HEADBOARD Micron Imaging Demo2 Camera Board Micron Sensor CMOS image sensor usb Contact Image Sensor Head Micron micron CMOS Camera ADAPTEC block diagram OF pentium 2
Text: Image Sensor Demo System Kits Introduction Image Sensor Demo System Kits Introduction Micron’s CMOS image sensor demo kits are USB-powered camera boards that enable easy testing and characterization of Micron sensors. The Micron Imaging demonstration system family supports the full line of Micron’s CMOS image sensor products.
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09005aef82ca4ad2/Source:
09005aef82ca8484
image sensor micron
micron sensor
micron HEADBOARD
Micron Imaging Demo2 Camera Board Micron Sensor
CMOS image sensor usb
Contact Image Sensor Head
Micron
micron CMOS Camera
ADAPTEC
block diagram OF pentium 2
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dram structure
Abstract: 2240 6T SRAM micron sram
Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they
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INFMP200206
dram structure
2240
6T SRAM
micron sram
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XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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amphenol sim block
Abstract: SIM BLOCK
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601282
amphenol sim block
SIM BLOCK
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sim block
Abstract: amphenol sim block
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601222
sim block
amphenol sim block
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micro SD connector
Abstract: SD connector Micro SD
Text: Amphenol Micro SD Connector 1. Material: Contact: Alloy copper Shell:Alloy copper Insulator: High temperature. Thermoplastic, UL94V-0, 30%glass-filled. 2. Finish : Contact:0.38 micron gold plated at mating area. 4 micron Tin plated on solder tails. Shell:1.25 micron Tin plater overall.
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UL94V-0,
TF-PA-01-001-X
micro SD connector
SD connector
Micro SD
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CAD-0601-302
Abstract: CAD0601302 amphenol sim block
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601302
CAD-0601-302
amphenol sim block
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amphenol sim block
Abstract: No abstract text available
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601402
amphenol sim block
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amphenol sim block
Abstract: SIM BLOCK
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601382
amphenol sim block
SIM BLOCK
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amphenol sim block
Abstract: sim block
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601322
amphenol sim block
sim block
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SIM BLOCK amphenol
Abstract: amphenol sim block SIM BLOCK
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601362
SIM BLOCK amphenol
amphenol sim block
SIM BLOCK
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Panda Fiber
Abstract: Fujikura fiber Fujikura Optical fiber panda Fujikura panda fiber
Text: 80 micron PANDA Fibers Polarization-maintaining and Absorption reducing Fibers Core Stress applying parts Fujikura 80 micron PANDA fibers are released for miniature components and modules. And they are realized against external stress and shell bending as conventional 125 micron PANDA fiber for
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RCSM98-PS-U17B
RCSM13-PS-U17B
RCSM14-PS-U17B
RCSM15-PS-U17B
Panda Fiber
Fujikura fiber
Fujikura Optical fiber
panda
Fujikura panda fiber
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CAD-0601-262
Abstract: amphenol sim block
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601262
CAD-0601-262
amphenol sim block
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PDF
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amphenol sim block
Abstract: No abstract text available
Text: Amphenol SIM Card Connector 1. Material: Contact: Phosphor Copper Insulator: Glass filled high temperature Engineering plastics UL94V0, black 2. Finish: Contact: 0.38 micron Min gold plateing at mating area, 2.54-5.08 micron matte tin at solder tail and 1.27-2.54 micron nickel under
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UL94V0,
CAD0601242
amphenol sim block
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PC5004
Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz
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55-micron
PC5004
VGC650
VGC6P52
VGC600
IN01D1
NR02D1
QFP 128 bonding
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Untitled
Abstract: No abstract text available
Text: 10 1 NOTE: 1. MATERIAL: HOUSING, HIGH TEMPERATURE POLYMER. 35 on TERMINAL, COPPER ALLOY. GROUNDING CLIP, COPPER ALLOY. 2. FINISH: TERMINAL: NICKEL OVERALL THICKNESS 0.5 MICRON MINIMUM, SELECTIVE GOLD 0.1 MICRON MINIMUM OVER PALLADIUM/NICKEL 0.5 MICRON MINIMUM IN CONTACT AREA,
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OCR Scan
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677990SPECIFIED)
SD-67799-004
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PDF
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Untitled
Abstract: No abstract text available
Text: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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OCR Scan
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MT2LSDT432U,
MT4LSDT832UD
100-pin,
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PDF
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Untitled
Abstract: No abstract text available
Text: 10 74703 NOTES: 1. MATERIALS: HOUSING - LIQUID CRYSTAL POLYMER, UL94 V -0, NATURAL TERMINAL - COPPER NICKEL SILICON ALLOY SHIELD - BRASS ALLOY 2. FINISHES: TERMINAL: 1.27 MICRON MIN. SELECT GOLD AND 3.81 MICRON MIN. SELECT TIN/LEAD OVER 1.27 MICRON MIN. NICKEL OVERALL
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SD-74703-001
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nd02d2
Abstract: No abstract text available
Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
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OCR Scan
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VGC450/VGC453
VGC450/453
nd02d2
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PDF
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