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    MICRON MT42C Search Results

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    Untitled

    Abstract: No abstract text available
    Text: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •


    OCR Scan     		PDF 000177b MT42C4064 24L/400 VcqC12 MIL-STD-883

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    micron DRAM

    Abstract: No abstract text available
    Text: PRELIMINARY MT42C8255 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 x 8 SAM VRAM FEATURES • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply


    OCR Scan     		PDF MT42C8255 512-cycle 300mW 40-Pin micron DRAM

    Untitled

    Abstract: No abstract text available
    Text: MICRON MT42C8127 VRAM 128Kx8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


    OCR Scan     		PDF MT42C8127 512-cycle 275mW 100ns 128Kx8

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON MT42C4256 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-89497, Class M • JAN 5962-89497, Class B • MIL-STD-883, Class B 28L/400 CDIP SC [ 1 SDQ1 [ 2 FEATURES • • • • • • • • • •


    OCR Scan     		PDF MT42C4256 MIL-STD-883, 28L/400 512-cycle Low883C MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOL OGY INC 17E D biiisMT aooiôoa t • ADVANCE RON MT42C4256 883C MILITARY VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • Industry standard pin-out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply


    OCR Scan     		PDF MT42C4256 100ns MT42C4064 64Kx4) 28L/400

    MT42C812

    Abstract: No abstract text available
    Text: MT42C8128 128K X 8 VRAM [MICRON VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (Q-6) SPECIAL FUNCTIONS • • • • • • JEDEC Standard Function set PERSISTENT MASKED WRITE SPLIT READ TRANSFER


    OCR Scan     		PDF MT42C8128 128Kx8 40-Pin 40/44-Pin 25ns/22ns 30ns/25ns 100ns, 30ns/27ns MT42C8128 MT42C812

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON MT42C4255 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-89497, C lass M • JA N 5962-89497, Class B • M IL-STD -883, Class B 28L/400 CDIP SCI 1 28 1Vss FEATURES SDQ11 2 27 ISDQ4 SDQ2 [ 3 26 ISDQ3 •


    OCR Scan     		PDF MT42C4255 512x4 28L/400 SDQ11 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: JM 2 8 W9i MICRON • MT42C4255 IIC H N O K X .Y INC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply


    OCR Scan     		PDF MT42C4255 512-cyde 275mW 100ns

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    MT42C8128-12

    Abstract: WCs MARKING vram dual port MT42C8128 MT42C812
    Text: MICRON TECHNOLOGY INC SSE D • 1311134=] 00DS2SS 33*1 «FIRN MT42C8128 1 2 8 K x 8 VRAM M IC R O N ■ li CHNUIOUY l.'J. VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (Q-6) SPECIAL FUNCTIONS •


    OCR Scan     		PDF 00DS2SS MT42C8128 275mW 512-cycle 128Kx8 MT42CS12B MT42C8128-12 WCs MARKING vram dual port MT42C812

    mt42c4256

    Abstract: T42C4256
    Text: MICRO N T E C H N O L O G Y INC SSE » • b l l l S 4 1 00 05 10 7 MICRON I v VRAM 2 5 - - T 6 71S ■ MRN MT42C4256 K ' a x V 4 <0 ' 2 R A M 3 256K X 4 DRAM WITH 512x4 SAM FEATURES


    OCR Scan     		PDF MT42C4256 512-cycle MT42C4256 T42C4256

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D b i l l 5 ^ DGD5 223 Sflb • URN SUPERSEDED BY MT42C8128 MT42C8127 128K x 8 VRAM M IC R O N B TECHNOLOGY. INC. T .% -rb -i£> _ VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • • PIN ASSIGNMENT Top View


    OCR Scan     		PDF MT42C8128 MT42C8127 128Kx8 40-Pin 512-cycle 275mW

    SDQ11

    Abstract: vram dual port 256K X 16 MULTIPORT VIDEO RAM
    Text: ADVANCE MT42C256K16A1 256K x 16 VRAM b l l l S M I D 0 D S 33 7 TS1 URN M IC R O N SSE D MICRON T E C H N O L O G Y INC VRAM 256Kx 16 DRAM WITH 512x16 SAM - 7 - 0 FEATURES Industry standard pinout, timing, and functions


    OCR Scan     		PDF MT42C256K16A1 512-cycle 350mW 256Kx 512x16 T--46--23--20 SDQ11 vram dual port 256K X 16 MULTIPORT VIDEO RAM

    Untitled

    Abstract: No abstract text available
    Text: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply


    OCR Scan     		PDF 512-cvde 275mW 100ns 40-Png MT42C8127

    MT42C4256Z

    Abstract: No abstract text available
    Text: l i f- V nib MICRON • 512K X MT20D51240 40 DRAM M O DULE 512K X 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process.


    OCR Scan     		PDF MT20D51240 MT20D51240) MT20D51240 72-pin 780mW 512-cyde MT20D51240G MT2D2568M MT42C4256Z

    sc 8256

    Abstract: Harris+8256
    Text: M T42C 8256 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 X 8 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)


    OCR Scan     		PDF 512-cycle 40-Pin MT42C8256 sc 8256 Harris+8256

    MAS 10 RCD

    Abstract: marking CODE 7Ls Model MAS 10 RCD marking 7Ls W42C MT42C4064 MT4C4256 circuit diagram of o general split ac
    Text: .¡AN a a ¡991 MICRON • M T42C8127 I t CMHOt OCT ML 128K x8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply


    OCR Scan     		PDF MT42C8127 128Kx8 512-cvcle 275mW 100ns MAS 10 RCD marking CODE 7Ls Model MAS 10 RCD marking 7Ls W42C MT42C4064 MT4C4256 circuit diagram of o general split ac

    MT42C4256

    Abstract: micron DRAM
    Text: MT42C4256 256K X 4 VRAM MICRON VRAM 256K X 4 DRAM WITH 512x4 SAM • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply PIN ASSIGNMENT (Top View • In p u ts a n d o u tp u t s a r e fu lly l l ' L c o m p a tib le


    OCR Scan     		PDF MT42C4256 512x4 28-Pin micron DRAM

    64kx4 DRAM

    Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
    Text: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process


    OCR Scan     		PDF 64Kx4 256-cycle 250mW 100ns 100ns, 120ns, 150ns, T-46-23-37 64kx4 DRAM marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 3ÖE D blllSHI G0G2S72 2 IMRN T -H & -2 Z -3 7 128Kx8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CMOS silicon gate process Single +5V ±10% pow er supply


    OCR Scan     		PDF G0G2S72 128Kx8 512-cycle 275mW 100ns 40-Pin GQ02bQ4

    Micron MT42C

    Abstract: No abstract text available
    Text: PRELIMINARY M T42C8255 256KX 8 VRAM MICRON I n'—r ^*rr'y VRAM 256K x 8 DRAM WITH 512x8 SAM FEATURES • • • 40-Pin SOJ Q-6 Vec C 1 SC [ 2 SO I [ 3 S02 ( 4 SOS [ 5 S0 4 [ 6 TRiOE [ 7 • NONPERSISTENT M ASKED WRITE • BLOCK WRITE • SPLIT READ TRANSFER


    OCR Scan     		PDF 512-cycle 300mW 512x8 40-Pin MT42C8255 MT42CW55 Micron MT42C

    Untitled

    Abstract: No abstract text available
    Text: nllifriitr i~~*'TíiniimL—"-^ír niriaittT MICRON TECHNOLOGY INC 3fiE ]> • b l l l S M 6} DQQ5b44 1 « M R N PRELIMINARY TRIPLE PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports


    OCR Scan     		PDF DQQ5b44 512x4 450mW 512-cycle T-46-23-37

    Altra SAM

    Abstract: SF 338 cwo JAGR
    Text: MICRON TECHNOLOGY INC IME D t l l l S M I DQDllfl? S PRELIM IN A R Y T -% -2 3 -3 1 VRAM 128K X 8 DRAM with 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View Industry standard pin-out tim ing, an d functions H igh perform ance CMOS silicon gate process


    OCR Scan     		PDF 200mW 40-Pi0 T-46-23-37 VALI00 Altra SAM SF 338 cwo JAGR