64kx4 DRAM
Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
Text: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process
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64Kx4
256-cycle
250mW
100ns
100ns,
120ns,
150ns,
T-46-23-37
64kx4 DRAM
marking WMM
IC-012
MT42C4064
T-46
00024B1
TS PQ4 24
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tea6200
Abstract: bb809 equivalent sfe 5.5 murata ndk 10 T 7 bb809 murata crystal filter AM 10.7 murata filter SFE 10.7 mx02 sfe 5,5 ma 7PS-1077
Text: TEA6200 _ INTEGRATED AM UPCONVERSION RECEIVER GENERAL DESCRIPTION The TEA6200 is an integrated AM upconversion receiver circuit w ith an IF o f 10.7 MHz. Because o f the high dynamic range o f the RF prestage there is no tuned prestage. The whole selectivity is provided
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TEA6200
TEA6200
ZS1854
PS-1078
BB609,
BB809
BBY40
7PS-1077
7ZS1S55
bb809 equivalent
sfe 5.5 murata
ndk 10 T 7
murata crystal filter AM 10.7
murata filter SFE 10.7
mx02
sfe 5,5 ma
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Untitled
Abstract: No abstract text available
Text: QSFCT151T, 251T, 2151T, 2251T H i g h STp, e e d C M O S 8 In p u t Q ¡£ £ 2 1 2 2 1 2 1 QS54/74FCT251T M u ltip le x e r s QS54/74FCT2151T QS54/74FCT2251T FEATURES/BENEFITS • Pin and function compatible to the 74F151/251 74FCT151/251 and 74FCT151T/251T
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QSFCT151T,
2151T,
2251T
QS54/74FCT251T
QS54/74FCT2151T
QS54/74FCT2251T
74F151/251
74FCT151/251
74FCT151T/251T
MIL-STD-883
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Lx010
Abstract: lw010bk LUCENT LW015A
Text: Advance Data Sheet January 1997 microelectronics group Lucent Technologies Bell Labs Innovations LC/LW010- and LC/LW015-Series Power Modules: 18 Vdc to 36 Vdc and 36 Vdc to 75 Vdc Inputs, 10 W and 15 W Features • Low profile: 10.2 mm x 25 mm x 51 mm 0.40 in. x
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LC/LW010-
LC/LW015-Series
00SGQ25
Lx010
lw010bk
LUCENT LW015A
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 4 4 0 0 A • H Y U N D A I S e r ie s 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514400A
1AC07-30-MAY94
Q24fll
HY514400AJ
HY514400AU
HY514400AT
HY514400ALT
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8054 transistor
Abstract: S-8053ALR S8054ALR 8053alr 8054HN S-8053ALR-LJ-X S-8054HN-CB-X 8054ALB 8054ALR S-8054ALB
Text: S-805 Series VOLTAGE DETECTOR The S-805 Series is a non-adjusting voltage detector using a CM O S process. The detection voltage is fixed internally. The voltage detectors are composed of a high-precision and low power consumption standard voltage source, a
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S-805
S-8051ANB,
S-8051ANB-NA-X
000247b
8054 transistor
S-8053ALR
S8054ALR
8053alr
8054HN
S-8053ALR-LJ-X
S-8054HN-CB-X
8054ALB
8054ALR
S-8054ALB
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Untitled
Abstract: No abstract text available
Text: M X " C U M , I N C . Advance Information MX803A f C-BUS Ì AUDIO SIGNALING PROCESSOR I COMPATIBLE J - DESCRIPTION The MX803A, a member of the DBS800 1C family, is an audio signaling processor that provides an inband tone signaling capability for LMR radio systems. Signaling systems
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MX803A
MX803A,
DBS800
MX803A
MX803AJ
24-pin
198ms.
396ms.
Q0D24flb
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