MGF1801
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF1801B S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures
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MGF1801B
MGF1801B,
23dBm
100mA
MGF1801
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MGF1801BT
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures
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MGF1801BT
MGF1801BT,
MGF1801BT
23dBm
100mA
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MGF1801BT
Abstract: MGF1801B
Text: June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC June/2004
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June/2004
MGF1801BT
MGF1801BT
MGF1801B
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MGF1801B
Abstract: Microwave power GaAs
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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MGF1801B
MGF1801B,
23dBm
MGF1801B
Microwave power GaAs
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k 1413 FET
Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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MGF1801B
MGF1801B,
23dBm
June/2004
k 1413 FET
mitsubishi microwave
MGF1801B
MGF1801
MGF1
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MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
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SPP02N60
SPP03N60
SPP04N60
SPP07N60
SPP11N60
SPP20N60
SPW11N60
SPW20N60
SPW47N60
SPP02N80
MGF4919G
SP*02N60
SPP11N80
to-220 smd
MGF1601
SPW47N60
MGF0905A
SPW11N80
SPP11N60
SPP20N60
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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MGF1801B
Abstract: MGF1801
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B f i MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 8 0 1 B , m ed iu m -p o w e r GaAs FET w ith an Nchannel S ch o ttky gate, is designed fo r use in S to X band U n it 4M IN . m illi m e t e r s liu c h e s i
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MGF1801B
MGF1801B
MGF1801
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MGF1801B
Abstract: No abstract text available
Text: HIGH POWER Ga As FET M G F 1601B /1801 B /09xxx/24xxx Series Typical Characteristics Type MGF1801B MQF0904A . MGF090SA . IWIQF0908B M8F0M78 MGFQ909A * * MGFOStOA * M F0911A * «IOF2407À MGF241BA MQF243QA ★ ★ : Under development a s> 21.8 23.0 28.0
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1601B
/09xxx/24xxx
MGF1801B
MQF0904A
MGF090SA
IWIQF0908B
M8F0M78
MGFQ909A
F0911A
IOF2407À
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E 212 fet
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 8 0 1 B , medium-power GaAs FET with an Nchannel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1801B
E 212 fet
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E 212 fet
Abstract: MGF1801BT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package
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MGF1801BT
MGF1801BT
23dBm
100mA
E 212 fet
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MGF1801BT
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package
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MGF1801BT
MGF1801BT
23dBm
100mA
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ha 1406 ha
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package
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MGF1801B
MGF1801B,
ha 1406 ha
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MGF1801
Abstract: IG200 mitsubishi microwave MGF1801BT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky g a te , is designed for use S-X band amplifiers and oscillators. The.hermetically sealed metal-ceramic package
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MGF1801
MGF1801BT
MGF1801BT
23dBm
100mA
IG200
mitsubishi microwave
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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MGF1302
MGF1303B
MGF1323
MGF14
MGF1412B
MGF1403B
MGF1423B
MGF1425B
MGF1902B
MGF1903B
MGF4919G
MGF4919
MGF0907B
14512H
mgf4316g
MGFC45V2527
MGF1923
MGFC38V3642
MGF0904A
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