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    MGF0906 Search Results

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    MGF0906 Price and Stock

    Panasonic Electronic Components MGF0906B

    S BAND, GAAS, N-CHANNEL, RF POWER, JFET
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    Quest Components MGF0906B 15
    • 1 $22.491
    • 10 $19.992
    • 100 $18.4926
    • 1000 $18.4926
    • 10000 $18.4926
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    Mitsubishi Electric MGF0906B

    L, S BAND POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
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    ComSIT USA MGF0906B 525
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    Mitsubishi Electric MGF0906B01

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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    ComSIT USA MGF0906B01 40
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    Others MGF0906B-01

    INSTOCK
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    Chip 1 Exchange MGF0906B-01 2
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    MGF0906 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF0906 Mitsubishi L,S BAND POWER GaAs FET Scan PDF
    MGF0906B Mitsubishi L,S BAND POWER GaAs FET Original PDF
    MGF0906B Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Scan PDF

    MGF0906 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MGF0906B Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-15 I(D) Max. (A)3.0 P(D) Max. (W)23 Maximum Operating Temp (øC)175 I(DSS) Min. (A)2.0Â I(DSS) Max. (A)3.0 @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF MGF0906B

    mitsubishi

    Abstract: MGF0906B MGF0906 Band Power GaAs FET
    Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGF0906B mitsubishi MGF0906B MGF0906 Band Power GaAs FET

    MGF0906B

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0906B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B － － Sample history:


    Original     		PDF MGF0906B 17GHz MGF0906B 14GHz 25deg

    MGF0906B

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz


    Original     		PDF MGF0906B MGF0906B, MGF0906B

    MGF0907

    Abstract: MGF0907b MGF0906B
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B － － Sample history:


    Original     		PDF MGF0907B 17GHz MGF0906B MGF0907B 14GHz 25deg MGF0907 MGF0906B

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz


    Original     		PDF MGF0906B MGF0906B,

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGFQ9Q6B, GaAs FET w ith an N-charmel schottky gate, is designed fo r use in UHF band amplifiers. Unit : m illim e te rs FEATURES • • Class A operation


    OCR Scan     		PDF MGF0906B GF-21

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET w ith an N -channel schottky U n it: m illim e te rs gate, is designed fo r use in U H F band am plifiers. FEATURES • Class A operation


    OCR Scan     		PDF MGF0906B 100S5

    MGF0906A

    Abstract: MGF0907A 0907b
    Text: A MGF0906A MGF0907A Packaged m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION • The MGF0906A and MGF0907A GaAs FETs, with N-channel Schottky gates, are designed for use in UHF band amplifiers. High power added efficiency @ 2.3 GHz, PidB MGF0906A: riadd = 40% (TYP)


    OCR Scan     		PDF MGF0906A MGF0907A MGF0906A: MGF0907A: MGF0907A 0907b

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> | M G F0906B | _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES


    OCR Scan     		PDF F0906B 37dBm

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p

    MGF0906B

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0906B L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET w ith an N-channel schottky Unit: millimeters gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation


    OCR Scan     		PDF MGF0906B MGF0906B, 37dBm GF-21 MGF0906B