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    GF0906B Price and Stock

    Mitsubishi Electric MGF0906B

    L, S BAND POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
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    ComSIT USA MGF0906B 525
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    Mitsubishi Electric MGF0906B01

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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    ComSIT USA MGF0906B01 40
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    Others MGF0906B-01

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    Chip 1 Exchange MGF0906B-01 2
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    GF0906B Datasheets Context Search

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    MGF0906B

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0906B L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET w ith an N-channel schottky Unit: millimeters gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation


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