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    MG30G2DM1 Search Results

    MG30G2DM1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG30G2DM1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG30G2DM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG30G2DM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: MG30G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20


    Original     		PDF MG30G2DM1 time700n HL093HD5 Code4-310 NumberTR00400310

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


    Original     		PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    MG30G2DM1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm M OTOR CONTROL APPLICATIONS. FEATURES: 4 - F A S T - ON TAB # 1 1 0 . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode.


    OCR Scan     		PDF MG30G2DM1 -108B1A MG30G2DM1

    2sk1029

    Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
    Text: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1


    OCR Scan     		PDF 2SK578* 2SK447" 2SK568* 2SK1513" 2SK1029* MG15G1AM1 2SK1333* MG30D1ZM1 MG30D2YM1 MG30G2YM1 2sk1029 MP6702 2sk1513 2SK56 MG15C4HM1 MG50D2DM1

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Untitled

    Abstract: No abstract text available
    Text: ,TOSHIBA {DISCRETE/OPTO}9097250 TOSHIBA DISCRETE/OPTO TO SH IBA SEMICONDUCTOR TO DE I TDTTSSD GDlt.411 □ Ï 90D 16411 DT-3^S?7 TOSHIBA GTR MODULE MG 3 O G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF -205il MG30G2DM1-5*

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    ttr01

    Abstract: MG50D2DM1 H125 250V MG50G2DM1 MG30D1ZM1 MG30D2DM1 MG30D2YM1 MG30G2DM1 MG30G2YM1 MG50D2YM1
    Text: V-ÿy-^xf •t ÿ i — it- ->'J3 MOS MOS FET F E T £ m s / 2 * !® o Hg/2flWB « M B » y 1- • ¡S M 7 ' zm-i 1 S ¿ ^ r - x é f t ( i « S á t i T l - '5 o 7 1; — * - f 7L- ■f ' - n — w DM 1 Dl , . ^ _ K2 o- w -K (C I) Oo -o \ \


    OCR Scan     		PDF H-101 ttr01 MG50D2DM1 H125 250V MG50G2DM1 MG30D1ZM1 MG30D2DM1 MG30D2YM1 MG30G2DM1 MG30G2YM1 MG50D2YM1