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Toshiba America Electronic Components MG200Q1JS40
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MG200Q1JS40		31		1	1 $114 10 $105.222 100 $96.4668 1000 $96.4668 10000 $96.4668	Buy Now
Quest Components	MG200Q1JS40		24			1 $123.5 10 $114 100 $109.25 1000 $109.25 10000 $109.25	Buy Now

MG200Q1JS Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG200Q1JS40		Toshiba	Silicon N-channel IGBT GTR module for high power switching, chopper applications		Original	PDF
MG200Q1JS40		Toshiba	N channel IGBT		Original	PDF
MG200Q1JS40		Toshiba	TRANS IGBT MODULE N-CH 1200V 200A 5(2-109C3A)		Original	PDF
MG200Q1JS40		Toshiba	GTR Module Silicon N Channel IGBT		Scan	PDF

MG200Q1JS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MG200Q1JS40 Abstract: mg200q1js Text: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.) Enhancement-mode	Original	MG200Q1JS40 2-109C3A MG200Q1JS40 mg200q1js	PDF
MG200Q1JS40 Abstract: No abstract text available Text: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode	Original	MG200Q1JS40 2-109C3A MG200Q1JS40	PDF
MG200Q1JS40 Abstract: No abstract text available Text: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode	Original	MG200Q1JS40 2-109C3A MG200Q1JS40	PDF
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE M G 2 Q Q SILICON N CHANNEL IGBT n 1 K m m w r i n • w HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f —O.S^s Max. tr r = 0.5/'-?s (Max.) • Low Saturation Voltage	OCR Scan	MG200Q1JS40	PDF
MG200Q1JS40 Abstract: No abstract text available Text: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 J S4 0 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/^s Max. trr = 0.5/^s (Max.) • Low Saturation Voltage Unit in mm • v CE(sat) = 4-o v (Max.)	OCR Scan	MG200Q1JS40 MG200Q1JS40	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG200Q1JS40 MG200 Q 1 J S4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf= 0.5/iS Max. trr = 0.5,«s (Max.) Low Saturation Voltage	OCR Scan	MG200Q1JS40 MG200	PDF
e2gl Abstract: No abstract text available Text: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1 JS40 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f= 0 .5 ^ s Max. U nit in mm trr = 0.5,«s (Max.) • Low Saturation Voltage : VCE (sat) = 4-0V (Max.)	OCR Scan	MG200Q1JS40 MG200Q1 e2gl	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1JS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf= 0.5/iS Max. trr = 0.5,«s (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)	OCR Scan	MG200Q1JS40	PDF
Untitled Abstract: No abstract text available Text: MG200Q1JS40 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . CHO PPER A P P L IC A T IO N S . • • • • • High Input Impedance High Speed : tf=0.5/vs Max. trr = 0.5ps (Max.) Low Saturation Voltage : VCE (sat) = 4.0V (Max.) Enhancement-Mode	OCR Scan	MG200Q1JS40	PDF
S5J53 Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction	OCR Scan	200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753	PDF
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9	PDF
MG40001US41 Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50 Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13IfSm ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I\| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50	OCR Scan	MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50	PDF

G50Q2YS40 Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101	OCR Scan	GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js	PDF