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    MG200Q1 Price and Stock

    Toshiba America Electronic Components MG200Q1JS40

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG200Q1JS40 31 1
    • 1 $114
    • 10 $105.222
    • 100 $96.4668
    • 1000 $96.4668
    • 10000 $96.4668
    		Buy Now
    Quest Components MG200Q1JS40 24
    • 1 $123.5
    • 10 $114
    • 100 $109.25
    • 1000 $109.25
    • 10000 $109.25
    		Buy Now

    MG200Q1 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG200Q1JS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, chopper applications Original PDF
    MG200Q1JS40 Toshiba N channel IGBT Original PDF
    MG200Q1JS40 Toshiba TRANS IGBT MODULE N-CH 1200V 200A 5(2-109C3A) Original PDF
    MG200Q1JS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG200Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q1UK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG200Q1UK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG200Q1UK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 200A Scan PDF
    MG200Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q1US41 Toshiba TRANS IGBT MODULE N-CH 1200V 200A 4(2-109A4A) Original PDF
    MG200Q1US41 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG200Q1US41 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG200Q1US41 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF
    MG200Q1US51 Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109F1A) Original PDF
    MG200Q1US51 Toshiba TOSHIBA GTR Module Silicon N Channel IGBT Original PDF
    MG200Q1US51 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG200Q1US51 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

    MG200Q1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		MG200Q1US51 15tended PDF

    MG200Q1US51

    Abstract: No abstract text available
    Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		MG200Q1US51 MG200Q1US51 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		MG200Q1ZS40 2-109C2A PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		MG200Q1US51 2-109F1A PDF

    MG200Q1US41

    Abstract: mg200q1us
    Text: MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)


    Original     		MG200Q1US41 2-109A4A MG200Q1US41 mg200q1us PDF

    MG200Q1JS40

    Abstract: mg200q1js
    Text: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.) Enhancement-mode


    Original     		MG200Q1JS40 2-109C3A MG200Q1JS40 mg200q1js PDF

    MG200Q1ZS11

    Abstract: No abstract text available
    Text: MG200Q1ZS11 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.)


    Original     		MG200Q1ZS11 2-109B5A MG200Q1ZS11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .


    OCR Scan     		MG200Q1US51 MG200 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200Q1ZS40 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. C H O PPER A PPLIC A TIO N S. • • • • • High Input Impedance High Speed : tf=0.5,-/s Max. trr = 0.5,i/s (Max.) Low Saturation Voltage ; VCE (sat) = 4-0v (Max.) Enhancement-Mode The Electrodes are Isolated from Case.


    OCR Scan     		MG200Q1ZS40 I00000 PDF

    MG200Q1US41

    Abstract: No abstract text available
    Text: TO SHIBA MG200Q1US41 M G 2 0 0 Q 1 US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf=0.5/^s Max. : trr = 0.5/^s (Max.) Low Saturation Voltage


    OCR Scan     		MG200Q1US41 2-109A4A MG200Q1US41 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1US41 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf= 0.5/iS Max. : trr = 0.5,us (Max.) Low Saturation Voltage


    OCR Scan     		MG200Q1US41 2-109A4A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 Z S 4 0 Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)


    OCR Scan     		MG200Q1ZS40 MG200 PDF

    transistor JSW

    Abstract: jSw Diode
    Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		MG200Q1US51 transistor JSW jSw Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200Q1US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.5//s M ax. : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case.


    OCR Scan     		MG200Q1US41 2-109A4A Temp00 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE M G 2 Q Q SILICON N CHANNEL IGBT n 1 K m m w r i n • w HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f —O.S^s Max. tr r = 0.5/'-?s (Max.) • Low Saturation Voltage


    OCR Scan     		MG200Q1JS40 PDF

    MG200Q1US51

    Abstract: MG200Q1
    Text: TOSHIBA MG200Q1US51 M G 2 0 0 Q 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		MG200Q1US51 2-109F1A Tc-25Â MG200Q1US51 MG200Q1 PDF

    MG200Q1JS40

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 J S4 0 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/^s Max. trr = 0.5/^s (Max.) • Low Saturation Voltage Unit in mm • v CE(sat) = 4-o v (Max.)


    OCR Scan     		MG200Q1JS40 MG200Q1JS40 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG200Q1JS40 MG200 Q 1 J S4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf= 0.5/iS Max. trr = 0.5,«s (Max.) Low Saturation Voltage


    OCR Scan     		MG200Q1JS40 MG200 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG200Q1ZS40 MG 2 0 0 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage


    OCR Scan     		MG200Q1ZS40 PDF

    e2gl

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1 JS40 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f= 0 .5 ^ s Max. U nit in mm trr = 0.5,«s (Max.) • Low Saturation Voltage : VCE (sat) = 4-0V (Max.)


    OCR Scan     		MG200Q1JS40 MG200Q1 e2gl PDF

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


    OCR Scan     		MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100 PDF

    MG200Q1US51

    Abstract: TV-19 tlf 106
    Text: TO SHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Induetive Load • Low Saturation Voltage : VCE (Sat) = 3.6V (Max.)


    OCR Scan     		MG200Q1US51 2-109F1A Tc-25Â MG200Q1US51 TV-19 tlf 106 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		MG200Q1US51 PDF

    ss125c

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1ZS11 MG2 0 0 Q 1 Z S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=1.0,«s Max. trr = 0.5/us (Max.) Low Saturation Voltage : V c e (sat) = 2.7V (Max.)


    OCR Scan     		MG200Q1ZS11 sS125 ss125c PDF