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    MG100J2YS Price and Stock

    Toshiba America Electronic Components MG100J2YS40

    INSULATED GATE BIPOLAR TRANSISTOR, 100A I(C), 600V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG100J2YS40 9
    • 1 $23.4
    • 10 $23.4
    • 100 $23.4
    • 1000 $23.4
    • 10000 $23.4
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    MG100J2YS Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG100J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J2YS50 Toshiba TRANS IGBT MODULE N-CH 600V 100A 7(2-94D1A) Original PDF
    MG100J2YS50 Toshiba N channel IGBT Original PDF
    MG100J2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100J2YS50 Toshiba N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG100J2YS50 Toshiba GTR Module Silicon N-Channel IGBT Scan PDF
    MG100J2YS50DS Toshiba Silicon N-Channel GTR Module Scan PDF
    MG100J2YS9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J2YS9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J2YS91 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J2YS91 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG100J2YS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG100J2YS50

    Abstract: Toshiba transistor Ic 100A MG100J2YS
    Text: MG100J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.


    Original     		PDF MG100J2YS50 2-94D1A MG100J2YS50 Toshiba transistor Ic 100A MG100J2YS

    MG100J2YS50

    Abstract: Toshiba transistor Ic 100A
    Text: MG100J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode.


    Original     		PDF MG100J2YS50 2-94D1A MG100J2YS50 Toshiba transistor Ic 100A

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


    Original     		PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    RG130

    Abstract: 100J2Y MG100J2YS50 G2NL
    Text: TOSHIBA MG100J2YS50 MG1 0 0 J 2 Y S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG100J2YS50 100J2YS50 2-94D1A RG130 100J2Y MG100J2YS50 G2NL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M f ; i n n i 3 Y < ; R n HIGH PO W ER SWITCHING APPLICATIONS. U n it in mm MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B #110 The Electrodes are Isolated from Case. H igh In p u t Impedance,


    OCR Scan     		PDF MG100J2YS50 2-94D1A BMG100J2YS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG100J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100J2YS50 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • Includes a Complete Half Bridge in One Package.


    OCR Scan     		PDF MG100J2YS50 100//S*

    MG200J2YS21

    Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
    Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9


    OCR Scan     		PDF MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG100J2YS50 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG1 0 0 J 2 Y S 5 0 HIGH P O W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • T h e E le c tro d e s a re Iso la te d from C ase. • H ig h I n p u t Im pedance. • In c lu d e s a C om plete H a lf B rid g e in O ne


    OCR Scan     		PDF MG100J2YS50 30/iS 15/iS

    MG100J2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG100J2YS1 HIGH P O W E R S W I T C H I N G APPLICATIONS, M O T O R CONT R O L APPLICATIONS. . High Input Impedance . High Speed : tf=0.35;is Max. trr=0.25ns(Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode


    OCR Scan     		PDF MG100J2YS1 MG100J2YS1

    MG75J2YS40

    Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
    Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40


    OCR Scan     		PDF E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG75J2YS40 MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 20L6P44 MG150J2YS45 10L6P44

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG100J2YS50 MG1 00J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One Package.


    OCR Scan     		PDF MG100J2YS50 00J2YS50 100jus* 50/us*

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG100J2YS40

    Abstract: FAp DARLINGTON TRANSISTOR TOSHIBA IGBT snubber ap 5331 application POWER MOSFET HIG VELOCITY calculation of IGBT snubber P-Channel IGBT TRANSISTOR EN SMD TZ FAp DARLINGTON SMD TRANSISTOR
    Text: TOSHIBA 2. [ 5 ] IGBT Description IGBT Construction 2.1 Chip Construction IGBT Insulated G ate B ipolar T ransistors are devices which combine the high in p u t im pedance and high speed of th e M OSFET w ith the high conductivity characteristics (low sa tu ratio n


    OCR Scan     		PDF

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    MG50Q6ES41

    Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
    Text: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750


    OCR Scan     		PDF GT15J101 MG25J1BS11 MG50J1BS11 MG50J1E1S11 MG75J1BS11 GT15Q101 GT25Q101 MG50Q6ES41 MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 MG300J1US1

    MG50Q6es41

    Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
    Text: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752


    OCR Scan     		PDF GT15J101 MG25J1BS11 MG50J1BS11 MG75J1BS11 MP6750 MP6752 MG25J6ES40 MG50Q6es41 MG8QES42 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1