diode sy 160
Abstract: BLB102SYC-24V-P BLB102MGC-12V-P BLB102MGC-24V-P BLB102MGC-6V-P BLB102SYC-12V-P BLB102SYC-6V-P
Text: 10mm BAYONET BASED LED LAMPS Features BLB102 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLB102
BLB102-V
MAR/01/2001
diode sy 160
BLB102SYC-24V-P
BLB102MGC-12V-P
BLB102MGC-24V-P
BLB102MGC-6V-P
BLB102SYC-12V-P
BLB102SYC-6V-P
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diode sy 400
Abstract: BLF041MGC-12V-P BLF041MGC-24V-P BLF041MGC-6V-P BLF041SYC-12V-P BLF041SYC-24V-P BLF041SYC-6V-P
Text: 4mm FLANGE BASED LED LAMPS Features BLF041 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLF041
BLF041-V
MAR/01/2001
diode sy 400
BLF041MGC-12V-P
BLF041MGC-24V-P
BLF041MGC-6V-P
BLF041SYC-12V-P
BLF041SYC-24V-P
BLF041SYC-6V-P
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diode sy 160
Abstract: BLS101 BLS101MGC-12V-P BLS101MGC-24V-P BLS101MGC-6V-P BLS101SYC-12V-P BLS101SYC-24V-P BLS101SYC-6V-P
Text: 10mm SCREW BASED LED LAMPS Features BLS101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLS101
BLS101-V
MAR/01/2001
diode sy 160
BLS101MGC-12V-P
BLS101MGC-24V-P
BLS101MGC-6V-P
BLS101SYC-12V-P
BLS101SYC-24V-P
BLS101SYC-6V-P
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diode sy 400
Abstract: diode sy 160 diode sy-250 BLF052MGC-12V-P BLF052MGC-24V-P BLF052MGC-6V-P BLF052SYC-12V-P BLF052SYC-24V-P BLF052SYC-6V-P MG 12v diode
Text: 5mm FLANGE BASED LED LAMPS Features BLF052 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLF052
BLF052-V
MAR/01/2001
diode sy 400
diode sy 160
diode sy-250
BLF052MGC-12V-P
BLF052MGC-24V-P
BLF052MGC-6V-P
BLF052SYC-12V-P
BLF052SYC-24V-P
BLF052SYC-6V-P
MG 12v diode
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diode sy 160
Abstract: diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P
Text: 10mm BAYONET BASED LED LAMPS Features BLB101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLB101
BLB101-V
MAR/01/2001
diode sy 160
diode sy
Ic mega 16
BLB101SYC-12V-P
BLB101SYC-24V-P
BLB101SYC-6V-P
BLB101MGC-12V-P
BLB101MGC-24V-P
BLB101MGC-6V-P
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diode sy 160
Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
Text: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLF051
BLF051-V
MAR/01/2001
diode sy 160
diode sy 400
MG 12v diode
Diode SY 250
BLF051MGC-12V-P
BLF051MGC-24V-P
BLF051MGC-6V-P
BLF051SYC-12V-P
BLF051SYC-24V-P
BLF051SYC-6V-P
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 4mm FLANGE BASED LED LAMPS Package Dimensions EBLF041SURCE HYPER RED EBLF041MGC MEGA GREEN EBLF041SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSSCURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLF041SURCE
EBLF041MGC
EBLF041SYC
For12V
For28V
EA0337
EBLF041-2/2
SEP/21/2001
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF052SURCE HYPER RED EBLF052MGC MEGA GREEN EBLF052SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLF052SURCE
EBLF052MGC
EBLF052SYC
For12V
For28V
EA0339
EBLF052-2/2
SEP/21/2001
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF051SURCE HYPER RED EBLF051MGC MEGA GREEN EBLF051SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLF051SURCE
EBLF051MGC
EBLF051SYC
For12V
For28V
EA0338
EBLF051-2/2
SEP/21/2001
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Untitled
Abstract: No abstract text available
Text: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ9055D,
FSJ9055R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB102MGC MEGA GREEN EBLB102SURCE EBLB102SYC HYPER RED SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLB102MGC
EBLB102SURCE
EBLB102SYC
For12V
For28V
EA0330
SEP/21/2001
EBLB102-2/2
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB101MGC MEGA GREEN EBLB101SURCE HYPER RED EBLB101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLB101MGC
EBLB101SURCE
EBLB101SYC
For12V
For28V
EA0329
SEP/21/2001
EBLB101-2/2
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mev smd diode
Abstract: IRHNA67164 IRHNA63164 ir*7164
Text: PD-96959A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 TM International Rectifier’s R6 technology provides
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PD-96959A
IRHNA67164
IRHNA67164
IRHNA63164
90MeV/
MIL-STD-750,
MlL-STD-750,
mev smd diode
IRHNA63164
ir*7164
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Diode SY 350
Abstract: No abstract text available
Text: www.eLED.com 10mm SCREW BASED LED LAMPS Package Dimensions EBLS101MGC MEGA GREEN EBLS101SURCE HYPER RED EBLS101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLS101MGC
EBLS101SURCE
EBLS101SYC
For12V
For28V
EA0340
SEP/21/2001
EBLS101-2/2
Diode SY 350
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Untitled
Abstract: No abstract text available
Text: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL230R
FSGL230R
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IRHYB63134CM
Abstract: IRHYB67134CM
Text: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides
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PD-96997
O-257AA)
IRHYB67134CM
IRHYB67134CM
IRHYB63134CM
90MeV/
5M-1994.
O-257AA.
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IRHNJ67134
Abstract: IRHNJ63134
Text: PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides
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PD-96931A
IRHNJ67134
IRHNJ67134
IRHNJ63134
90MeV/
MIL-STD-750,
MlL-STD-750,
IRHNJ63134
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Untitled
Abstract: No abstract text available
Text: FSGYE230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE230R
FSGYE230R
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mev smd diode
Abstract: No abstract text available
Text: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides
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PD-96959
IRHNA67164
IRHNA63164
90MeV/
MIL-STD-750,
MlL-STD-750,
mev smd diode
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Untitled
Abstract: No abstract text available
Text: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs
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JANSR2N7404
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
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2E12
Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL033R
FSGL033R
2E12
FSGL033D1
FSGL033R3
FSGL033R4
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE033R
FSGYE033R
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Untitled
Abstract: No abstract text available
Text: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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FSL110R4
JANSR2N7410
O-205AF
254mm)
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IRHYS63134CM
Abstract: IRHYS67134CM
Text: PD-96930A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides
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PD-96930A
O-257AA)
IRHYS67134CM
IRHYS67134CM
IRHYS63134CM
90MeV/
5M-1994.
O-257AA.
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