philips 433mhz receiver
Abstract: 433.92mhz rf receiver 433mhz resonator 434 mhz oscillator Receiver with SAW-based Oscillator KESRX01 433mhz ask 4 channel remote ASK receiver 433mhz colpitts oscillator RF amplifer
Text: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5
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KESRX01
460MHz
DS3968
March1998
105dBm
315MHz)
QPA24
KESRX01/IG/QP1T
KESRX01/IG/QP1S
philips 433mhz receiver
433.92mhz rf receiver
433mhz resonator
434 mhz oscillator
Receiver with SAW-based Oscillator
KESRX01
433mhz ask 4 channel remote
ASK receiver 433mhz
colpitts oscillator
RF amplifer
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2N7411
Abstract: SL9110 MIL-PRF19500
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 1998. INCH-POUND \ MIL-PRF-19500/639A 24 March1998 SUPERSEDING MIL-PRF-19500/639 09 November 1996 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/639A
March1998
MIL-PRF-19500/639
2N7411
2N7411
SL9110
MIL-PRF19500
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philips 433mhz receiver
Abstract: 433mhz chip antenna
Text: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5
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KESRX01
460MHz
DS3968
March1998
105dBm
315MHz)
QPA24
KESRX01/IG/QP1T
KESRX01/IG/QP1S
philips 433mhz receiver
433mhz chip antenna
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AN207
Abstract: KESRX01 resistor var 5k DS3968
Text: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5
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KESRX01
460MHz
DS3968
March1998
105dBm
315MHz)
QPA24
KESRX01/IG/QP1T
KESRX01/IG/QP1S
AN207
KESRX01
resistor var 5k
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df2 diode
Abstract: KESTX01 AN207 KESRX01 434 mhz xtal oscillator block diagram for RF transmitter AND RECEIVER op QPA24 philips radio 433MHz
Text: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5
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KESRX01
460MHz
DS3968
March1998
105dBm
315MHz)
QPA24
KESRX01/IG/QP1T
KESRX01/IG/QP1S
df2 diode
KESTX01
AN207
KESRX01
434 mhz xtal oscillator
block diagram for RF transmitter AND RECEIVER op
QPA24
philips radio 433MHz
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df2 diode
Abstract: 434 mhz xtal oscillator power amplifer circuit diagram 433MHZ ask transmitter amplifer ASK receiver superheterodyne single 433-92mhz rf model 43402mhz
Text: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5
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KESRX01
460MHz
DS3968
March1998
105dBm
315MHz)
QPA24
KESRX01/IG/QP1T
KESRX01/IG/QP1S
df2 diode
434 mhz xtal oscillator
power amplifer circuit diagram
433MHZ ask transmitter amplifer
ASK receiver superheterodyne single
433-92mhz rf model
43402mhz
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df2 diode
Abstract: AN207 KESRX01
Text: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5
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KESRX01
460MHz
DS3968
March1998
105dBm
315MHz)
QPA24
KESRX01/IG/QP1T
KESRX01/IG/QP1S
df2 diode
AN207
KESRX01
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transistor C458
Abstract: MC74HCT164 tp394 motorola TP230 74hc164 C458 datasheet diode c341 RCVN18 RJ45 jack 1X4 IC 24c08 data sheet
Text: Preliminary ThunderSWITCH 24/3 Schematic Description and Schematics REFERENCE GUIDE: SPWA019 Networking Business Unit Revision 0.61 March1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or
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SPWA019
March1998
1000PF
DS0026-001
transistor C458
MC74HCT164
tp394
motorola TP230
74hc164
C458 datasheet
diode c341
RCVN18
RJ45 jack 1X4
IC 24c08 data sheet
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SO10 package
Abstract: No abstract text available
Text: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type VDSS RDS on IOUT VCC VN16BPS 40 V 0.06 : 5.6 A 26 V • MAXIMUM CONTINUOUS OUTPUT CURRENT: 20 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN
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VN16BSP
VN16BPS
PowerSO-10
SO10 package
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PDC16UV7284
Abstract: 106E capacitor
Text: March 1998 Revision 2.0 data sheet PDC16UV7284B- 103/10 T-S 128MByte (16M x 72) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV7284B-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M words by 72 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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PDC16UV7284B-
128MByte
PC/100
64-megabyte
168-pin,
MB81F64842B-
MP-SDRAMM-DS-20677-3/98
PDC16UV7284
106E capacitor
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P3NB60
Abstract: P3NB60FP transistor P3NB60FP p3nb STP3NB60 STP3NB60FP DSASW003744
Text: STP3NB60 STP3NB60FP N-CHANNEL 600V - 3.3 Ω - 3.3A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP3NB60 600 V < 3.6 Ω 3.3 A STP3NB60FP 600 V < 3.6 Ω 2.2 A FEATURES SUMMARY • TYPICAL RDS(on) = 3.3 Ω
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STP3NB60
STP3NB60FP
O-220/TO-220FP
O-220
P3NB60
P3NB60FP
transistor P3NB60FP
p3nb
STP3NB60
STP3NB60FP
DSASW003744
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D2NB60
Abstract: d2nb6 STD2NB60 STD2NB60T4 V1522 STD2NB60-1 d2nb 0037C
Text: STD2NB60 STD2NB60-1 N-CHANNEL 600V - 3.3 Ω - 2.6A DPAK/IPAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD2NB60 600 V < 3.6 Ω 2.6 A STD2NB60-1 600 V < 3.6 Ω 2.6 A FEATURES SUMMARY • TYPICAL RDS(on) = 3.3 Ω
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STD2NB60
STD2NB60-1
D2NB60
d2nb6
STD2NB60
STD2NB60T4
V1522
STD2NB60-1
d2nb
0037C
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D2NB60
Abstract: d2nb6 STD2NB60T4
Text: STD2NB60 STD2NB60-1 N-CHANNEL 600V - 3.3 Ω - 2.6A DPAK/IPAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD2NB60 600 V < 3.6 Ω 2.6 A STD2NB60-1 600 V < 3.6 Ω 2.6 A FEATURES SUMMARY • TYPICAL RDS(on) = 3.3 Ω
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STD2NB60
STD2NB60-1
STD2NB60-1
O-251
O-252
D2NB60
d2nb6
STD2NB60T4
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SO10 package
Abstract: VN16BPS VN16BSP VN16BSP13TR
Text: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type VDSS RDS on IOUT VCC VN16BPS 40 V 0.06 Ω 5.6 A 26 V • MAXIMUM CONTINUOUS OUTPUT CURRENT: 20 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN
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VN16BSP
VN16BPS
PowerSO-10
VN16BPS
SO10 package
VN16BSP
VN16BSP13TR
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B11NB40
Abstract: B11NB4 D2Pak Package dimensions 107A b11nb STB11NB40 STB11NB40-1 STB11NB40T4
Text: STB11NB40 STB11NB40-1 N-CHANNEL 400V - 0.48 Ω - 10.7A D2PAK/I2PAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STB11NB40 400 V < 0.55 Ω 10.7 A STB11NB40-1 400 V < 0.55 Ω 10.7 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.48 Ω
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STB11NB40
STB11NB40-1
O-262
B11NB40
B11NB4
D2Pak Package dimensions
107A
b11nb
STB11NB40
STB11NB40-1
STB11NB40T4
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Untitled
Abstract: No abstract text available
Text: March 1998 Revision 1.0 data sheet PDC2UV6484B- 75/102/103 T-S 16MByte (2M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UV6484B-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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PDC2UV6484B-
16MByte
PC/100
16-megabyte
168-pin,
MB81F16822B-
-10reliable.
MP-DS-SDRAMM-20693-3/98
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P3NB60
Abstract: P3NB60FP V1522 p3nb60fp datasheet STP3NB60 STP3NB60FP Part Marking TO-220 STMicroelectronics
Text: STP3NB60 STP3NB60FP N-CHANNEL 600V - 3.3 Ω - 3.3A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP3NB60 600 V < 3.6 Ω 3.3 A STP3NB60FP 600 V < 3.6 Ω 2.2 A FEATURES SUMMARY • TYPICAL RDS(on) = 3.3 Ω
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STP3NB60
STP3NB60FP
O-220/TO-220FP
O-220
P3NB60
P3NB60FP
V1522
p3nb60fp datasheet
STP3NB60
STP3NB60FP
Part Marking TO-220 STMicroelectronics
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Untitled
Abstract: No abstract text available
Text: March 1998 Revision 1.0 data sheet PDC2UV6484A- 75/102/103 T-S 16MByte (2M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UV6484A-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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PDC2UV6484A-
16MByte
PC/100
16-megabyte
168-pin,
MB81F16822B-
-10reliable.
MP-DS-SDRAMM-20692-3/98
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Untitled
Abstract: No abstract text available
Text: March 1998 Revision 1.0 data sheet PDC2UV7284B- 75/102/103 T-S 16MByte (2M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC General Description The PDC2UV7284B-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M
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PDC2UV7284B-
16MByte
PC/100
16-megabyte
168-pin,
MB81F16822B-
MP-DS-SDRAMM-20695-3/98
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b11nb40
Abstract: B11NB4 D2Pak Package dimensions b11nb STB11NB40T4 STMicroelectronics marking D2PAK obsolete STB11NB40 STB11NB40-1 DSASW003744
Text: STB11NB40 STB11NB40-1 N-CHANNEL 400V - 0.48 Ω - 10.7A D2PAK/I2PAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STB11NB40 400 V < 0.55 Ω 10.7 A STB11NB40-1 400 V < 0.55 Ω 10.7 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.48 Ω
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STB11NB40
STB11NB40-1
O-262
b11nb40
B11NB4
D2Pak Package dimensions
b11nb
STB11NB40T4
STMicroelectronics marking D2PAK obsolete
STB11NB40
STB11NB40-1
DSASW003744
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HF Colpitts VCO
Abstract: 434M 418 MHz SAW AM RF Transmitter 1,488 mhz crystal oscillator
Text: M IT E L KESRX01 290 - 460MHz ASK Receiver SEMICONDUCTOR Advance Information DS3968 5.0 March1998 The KESRX01 is a single chip ASK Amplitude Shift Key Receiver IC. It is designed to operate in a variety of low power radio applications including keyless entry, general domestic
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KESRX01
50Kbits/sec
315MHz,
92MHz
HF Colpitts VCO
434M
418 MHz SAW AM RF Transmitter
1,488 mhz crystal oscillator
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Untitled
Abstract: No abstract text available
Text: CD h JANSR2N7410 a r r is Formerly FSL110R4 March1998 3.5A, 1 0 0 V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, rDS ON = 0.600U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7410
MIL-STD-750,
MIL-S-19500,
500ms;
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Untitled
Abstract: No abstract text available
Text: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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FSL110R4
JANSR2N7410
O-205AF
254mm)
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Untitled
Abstract: No abstract text available
Text: TL16C550C, TL16C550CI ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH AUTOFLOW CONTROL _ • • • • • • • • • • Programmable Auto-RTS and Auto-CTS In Auto-CTS Mode, CTS Controls Transmitter In Auto-RTS Mode, RCV FIFO Contents and
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TL16C550C,
TL16C550CI
SLLS177D
MARCH1998
TL16C450
16-MHz
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