TH 2190 HOT Transistor
Abstract: No abstract text available
Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21180EF
TH 2190 HOT Transistor
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Untitled
Abstract: No abstract text available
Text: Type 945U High Current Screw Terminal Capacitors Metallized Polypropylene Dielectric Type 945U uses advanced metalized film technology to achieve long-life, high reliability in DC link applications. High voltage and high current ratings packaged in screw-terminal cases allow for replacement of series-parallel banks of aluminum
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2002/95/EC
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p281
Abstract: P28-1 TRANSISTOR P281
Text: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2246
Abstract: No abstract text available
Text: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2246
F2246
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PRF134
Abstract: No abstract text available
Text: polyfet rf devices PRF134 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
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PRF134
PRF134
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F2211
Abstract: No abstract text available
Text: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2211
F2211
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J593
Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
DS04-163RFPP
DS04-065RFPP)
J593
AGR21030EF
AGR21030EU
JESD22-C101A
J157
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AGERE
Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
Text: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications
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AGR26045E
AGR26045E
AGR26045EU
AGR26045EF
PB04-080RFPP
PB04-022RFPP)
AGERE
AGR21045F
AGR21045U
AGR26045EF
AGR26045EU
AGR26045XF
AGR26045XU
JESD22-C101A
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F2248
Abstract: No abstract text available
Text: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2248
F2248
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PRF136
Abstract: No abstract text available
Text: polyfet rf devices PRF136 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
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PRF136
PRF136
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AGR21060EF
Abstract: AGERE AGR21060E AGR21060EU JESD22-C101A JESD22-A114B
Text: Preliminary Product Brief November 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide
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AGR21060E
AGR21060E
AGR21060EU
AGR21060EF
PB04-015RFPP
PB03-096RFPP)
AGR21060EF
AGERE
AGR21060EU
JESD22-C101A
JESD22-A114B
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8000* kss crystal
Abstract: FXO-37F FXO-37FL crystal oscillator 100mhz
Text: Crystal Oscillator FXO-37F Miniature Clock Crystal Oscillator •Features ¡It is a compact and thin ceramic package with a metalized lead for surface mounting that is able to be automatically loaded. ¡Reflow soldering is possible. ¡CMOS, TTL IC direct drive is possible. Depending upon the frequency band, there
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FXO-37F
50MHz
125MHz
FXO-37FL
100MHz
125MHz
1000G
8000* kss crystal
FXO-37F
FXO-37FL
crystal oscillator 100mhz
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Untitled
Abstract: No abstract text available
Text: Package Outline 6-Lead DFN Package Outline K6 3.00x3.00mm body, 1.00mm height (max), 0.95mm pitch (punched type) e D 6 6 b L1 b2 E E2 E4 Note 1 (Index Area D/2 x E/2) Exposed Metalized Feature 1 Note 1 (Index Area D/2 x E/2) 1 L2 View B D2 Top View Bottom View
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DSPD-6DFNK63X3P095
B090808
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ASTM F1249
Abstract: ASTM D2103 EIA-583 F1249 F-1249 MIL-D-3464 JEDEC J-STD-033b F1249-90 ESD S11.11 MIL-D-3464 1 unit size
Text: TECHNICAL BULLETIN TB-2031 Statshield Moisture Barrier Bags Application Instructions Made in the United States of America Construction Desco’s Statshield® Moisture Barrier Bags manufactured from a static dissipative metalized laminated film. The metal layer of the Desco’s
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TB-2031
TB-2031
ASTM F1249
ASTM D2103
EIA-583
F1249
F-1249
MIL-D-3464
JEDEC J-STD-033b
F1249-90
ESD S11.11
MIL-D-3464 1 unit size
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P123
Abstract: No abstract text available
Text: polyfet rf devices P123 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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Abstract: No abstract text available
Text: M2R-25-4-1-TL Optical Gigabit Ethernet/Fibre Channel 850nm SFF 2x5 Dual Receivers - 1.25/1.0625GBaud - +3.3V Features ! 1.25 Gbps Gigabit Ethernet Compliant ! Metalized Plastic Package ! TTL Signal Detect output ! AC coupled PECL level outputs ! Low profile fits Mezzanine Card Applications
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M2R-25-4-1-TL
850nm
0625GBaud
0625GBaud
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M2T-25
Abstract: No abstract text available
Text: M2T-25-9-2-L Optical 1310nm SFF LC 2x5 Dual Transmitter Module - 8 to 1500MBaud - +3.3V PR EL IM IN AR Y Features ! 8Mbps to 1.5Gbps performance ! Metalized Plastic Package ! Transmitter Disable Input ! Low profile fits Mezzanine Card Applications ! 150Ω differential AC coupled PECL level Inputs
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M2T-25-9-2-L
1310nm
1500MBaud
M2T-25
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2A100V
Abstract: No abstract text available
Text: Metalized Polyester FILM CAPACITORS Part Number Construction MMT 225 Type1 Capacity2 1. 2. 2G Capacitance C ha n ge vs. Temperature Performance Curves T WVDC4 Tolerance 3 -4 0 20 40 Tem perature °C O F Vs. Temperature Type: MMT Capacity: The first two digits are significant,
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Untitled
Abstract: No abstract text available
Text: Polyester and Metalized Polyester FILM CAPACITORS x The Arco Film Series consists of 4 major families: 1 2 3 Axial wrap & fill metalized polyester film capac itors - round MMT , and flattened or compressed (MMF) configurations. These non-inductive capac
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3M EM
Abstract: No abstract text available
Text: 3M Tapes Metalized Fabric Backing The combination of copper-plated ripstop polyester fabric backing Flectron from Monsanto Co. and 3M conductive adhesive makes the 1190 a unique, lightweight shielding tape with exceptional conductivity, flexibility, and strength.
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Sprague 730P
Abstract: No abstract text available
Text: Type 730P VISHAY Vishay Sprague Film C apacitors High Frequency, Wrap-and-Fill, Metalized Polypropylene FEATURES • Excellent AC performance • Low power dissipation • Low dielectric absorption • Close tolerance • High stability PERFORMANCE CHARACTERISTICS
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20kHz
100kHz.
022fxF
400Hz.
1000Hz
400Hz
21-Sep-00
Sprague 730P
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100-kvar
Abstract: 150kvar
Text: High Voltage Power Capacitor-SH Type This product is a High Voltage Power SH capacitor with a safety device built-in. For High Voltage Power SH capacitor use polyp ropylene film which has excellent insulation ability as dielectric and metalized film which has self healing ability over special paper w hich has excellent
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Untitled
Abstract: No abstract text available
Text: TkJaRJSSS Crystal Oscillator KSS VC-FXO-35F ^ /JvJF^ EES,J ^97K M ^ii§5/'V oltage Controlled SMD Crystal Oscillator • ^ H /F e a tu r e s ■ • t 7 S 7 * r - V • * $ 7 -f X U - @ K W/ J ' J K • ? to • It is a compact and thin ceramic package with a metalized lead
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VC-FXO-35F
VC-FXO-35FL
0-35MHZ
30x10-6
50x10^
1000G
50x10-Â
75x10-6,
100x10-6.
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Untitled
Abstract: No abstract text available
Text: TKSI^Ss S Crystal Oscillator VC-FXO-35F Controlled S M D C ry sta l O scillator • ^ J ^ / F e a t ure • -tz 7 $ "j 9 — x/\° "J ■> r — v •/■ 1? 7 -f X 'J — g • u •5f| Jf2T* T-r o ya-^m nut^m x'to • It is a compact and thin ceramic package with a metalized lead for
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VC-FXO-35F
-35FL
35MHz
I000G
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