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    NE25139T1U73 Price and Stock

    California Eastern Laboratories (CEL) NE25139-T1-U73

    RF MOSFET 5V SOT143
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    DigiKey NE25139-T1-U73 Reel 3,000
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    NE25139T1U73 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE25139-T1-U73 NEC RF FETs, Discrete Semiconductor Products, FET 900 MHZ SOT-143 Original PDF
    NE25139T1U73 NEC General purpose dual-gate GaAS MESFET. Idss range 20-35 mA. Original PDF

    NE25139T1U73 Datasheets Context Search

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    NE25139

    Abstract: active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73
    Text: California Eastern Laboratories APPLICATION NOTE AN1020 Active Mixer Design Using the NE25139 Dual Gate MESFET Active mixers have some advantages over passive double balanced mixers. The most obvious advantage is that they provide gain instead of loss. This reduces the gain requirements on the low noise amplifier and the IF stage in a receiver.


    Original     		PDF AN1020 NE25139 NE25139 active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73

    NE25139

    Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		PDF NE25139 NE251 NE25139T1U74 24-Hour NE25139 ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13

    NE25139T1U73

    Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		PDF NE25139 NE251 24-Hour NE25139T1U73 NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139 E25139-T1 NE25139U71 NE25139T1U71 NE25139U72 E25139T1U72 NE25139U73

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139 NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73

    U73-U74

    Abstract: 14E-14
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 U73-U74 14E-14