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    ROHM Semiconductor MCH185A5R6DK

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    MCH185A5R6D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCH185A5R6DK ROHM Ceramic Capacitors, Capacitors, CAP CER 5.6PF 50V NP0 0603 Original PDF

    MCH185A5R6D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as


    Original     		PDF SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z PSF-S01-1mm EEF-101407 ECB-102925-B

    MCH185A221JK

    Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
    Text: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits


    Original     		PDF AN-079 SGA-8543Z dev2450 2440MHz EAN-104851 MCH185A221JK MCH185A390JK ML200C PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21

    MCH185C332K

    Abstract: MCH155F103Z mch184cn224k MCH153F104Z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		PDF MCH15 MCH18 MCH185C332K MCH155F103Z mch184cn224k MCH153F104Z

    MCH315A180J

    Abstract: MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J
    Text: 1/2 C L A S S I C 0 G M U LT I L AY E R C E R A M I C C A PA C I T O R S MCH SERIES • CLASS I, TEMPERATURE COMPENSATED: C0G • CLASS II, HIGH DIELECTRIC CONSTANT: X7R & Y5V. Z5U ALSO AVAILABLE MCH SERIES SPECIFICATIONS Parameter Temperature range Temp. coefficients


    Original     		PDF 30ppm/ with61J 560pF MCH315A681J 680pF MCH315A821J 820pF MCH315A102J MCH315A122J MCH315A152J MCH315A180J MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g LL1608FH4N7J DS110620 LL1608FH10J SZM2066ZSQ SZM2066ZSR

    dk39

    Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z bands21 DS110620 SZM2166ZSQ SZM2166ZSR SZM2166Z SZM2166ZPCK-EVB1 dk39 SZM-2166 szm2166 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic

    Untitled

    Abstract: No abstract text available
    Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250

    30 micro farad capacitor 6000 volt

    Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
    Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability


    Original     		PDF ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660

    Untitled

    Abstract: No abstract text available
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  P1dB =33.5dBm at 5V, 2.4GHz  802.11g 54Mb/s Class AB Performance


    Original     		PDF SZP-2026Z SOF-26 SZP-2026Z 54Mb/s 26dBm 27dBm SZP-2026Zâ DS110620

    mch185cn153k

    Abstract: MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH18 MCH185A150J MCH153F104Z MCH185A470J f103z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		PDF MCH15 MCH18 12please 4316B mch185cn153k MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH185A150J MCH153F104Z MCH185A470J f103z

    cdi schematics pcb

    Abstract: datasheet ic 7822 eic 4191 1 micro farad capacitor 50 VOLT cdi schematic cdi schematics ECG014 LL1005-FH1N0S LL1608-F15NK LL1608-F33NK
    Text: DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications „ „ 50 to 2000 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 23.5 dBm Typical P1dB at 1900 MHz Excellent Stability „ „ „


    Original     		PDF ECG014 OT-89 ECG014 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 cdi schematics pcb datasheet ic 7822 eic 4191 1 micro farad capacitor 50 VOLT cdi schematic cdi schematics LL1005-FH1N0S LL1608-F15NK LL1608-F33NK

    600S100JW250

    Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
    Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 600S100JW250 cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series

    Untitled

    Abstract: No abstract text available
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z DS110620 SZM2166ZSQ SZM2166ZSR SZM2166ZPCK-EVB1 SZM2166ZPCK-EVB2 SZM2166ZPCK-EVB3

    TAJB105KLRH

    Abstract: No abstract text available
    Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		PDF SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 TAJB105KLRH

    CL10B104KONC

    Abstract: LL1608-FS18NJ MCR03*J102 SGA-8343 MCH185A100D MCR03*J102 resistor sige an-061 GETEK Z6 82 5.1 amplifier circuits
    Text: Design Application Note - AN-044 SGA-8343 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		PDF AN-044 SGA-8343 EAN-101847 CL10B104KONC LL1608-FS18NJ MCR03*J102 MCH185A100D MCR03*J102 resistor sige an-061 GETEK Z6 82 5.1 amplifier circuits

    transistor 2.4GHz amplifier schematic wifi

    Abstract: 600S100JW250 dk39 MCH182CN104K SZM-2166Z SZM - 238 wifi 2.4 ghz pcb layout
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z applicaZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 SZM-2166Z-EVB3 EDS-105840 transistor 2.4GHz amplifier schematic wifi 600S100JW250 dk39 MCH182CN104K SZM - 238 wifi 2.4 ghz pcb layout

    SZM-2166Z

    Abstract: dk39 LL1608-FH4N7J SZM2166 LL1608FH4N7J transistor 2.4GHz amplifier schematic wifi F24G 43S21
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z SZM2166Z SZM2166ZPCK-EVB1 SZM2166ZPCK-EVB2 SZM2166ZPCK-EVB3 DS100622 dk39 LL1608-FH4N7J SZM2166 LL1608FH4N7J transistor 2.4GHz amplifier schematic wifi F24G 43S21

    Cap 0603 X7R

    Abstract: SOF-26 SZP-2026Z recommended land pattern for 0402 cap
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


    Original     		PDF SZP-2026Z SOF-26 SZP-2026Z o026Z" SZP2026Z SZP2026Z-EVB1 SZP2026Z-EVB2 DS091202 Cap 0603 X7R SOF-26 recommended land pattern for 0402 cap

    MCH185A050c

    Abstract: MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J
    Text: 積層セラミックチップコンデンサ／Multi Layer Ceramic Chip Capacitors MCH15 Series（1005 Size）MCH18 Series（1608 Size） はんだ喰われ防止に、効果的なバリア層に優れた はんだ付け性のコーティング処理を施した電極構造を採用。


    Original     		PDF MCH15 MCH18 MCH15 1005size MCH18 1608size 110pF 4316D MCH185A050c MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J

    SZP-2026Z

    Abstract: rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


    Original     		PDF SZP-2026Z SOF-26 SZP-2026Z SZP-2026Z-EVB1 SZP-2026Z-EVB2 EDS-104611 rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic

    TAJB105KLRH

    Abstract: SXB-2089Z GaAs pHEMT MMIC medium power amplifier ROHM TRACE CODE MCH185C
    Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as


    Original     		PDF SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z CMOS180 PSF-S01-1mm EEF-101407 TAJB105KLRH GaAs pHEMT MMIC medium power amplifier ROHM TRACE CODE MCH185C

    SZM-2066Z

    Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g 60052R4CW250 600S100JW250 0805HQ 12XJBB LL1608FH4N7J LL1608FH10J transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z

    CL10B104KONC

    Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
    Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		PDF AN021 SGA-9189 EAN-101534 CL10B104KONC MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK Sirenza amplifier SOT-89 ECB-102216-B AN-021