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    MBR350 Search Results

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    MBR350 Price and Stock

    Rochester Electronics LLC MBR350RL

    DIODE SCHOTTKY 50V 3A AXIAL
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    DigiKey MBR350RL Bulk 7,072 2,959
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    onsemi MBR350RL

    DIODE SCHOTTKY 50V 3A AXIAL
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    DigiKey MBR350RL Reel
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    Avnet Americas MBR350RL Reel 4 Weeks 3,562
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    Newark MBR350RL Bulk 3,570
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    Bristol Electronics MBR350RL 998
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    Quest Components MBR350RL 798
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    MBR350RL 505
    • 1 $0.1959
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    Rochester Electronics MBR350RL 7,072 1
    • 1 $0.1024
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    Vishay Semiconductors VS-MBR350

    DIODE SCHOTTKY 50V 3A C16
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    DigiKey VS-MBR350 Bulk
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    onsemi MBR350RLG

    DIODE SCHOTTKY 50V 3A AXIAL
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    DigiKey MBR350RLG Cut Tape
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    MBR350RLG Reel
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    Avnet Americas MBR350RLG Reel 4 Weeks 1
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    Bristol Electronics MBR350RLG 1,092
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    Quest Components MBR350RLG 972
    • 1 $0.878
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    MBR350RLG 5
    • 1 $0.2634
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    ComSIT USA MBR350RLG 450
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    Chip1Stop MBR350RLG 126
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    MBR350RLG 4
    • 1 $1.43
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    Vishay Semiconductors VS-MBR350TR

    DIODE SCHOTTKY 50V 3A C-16
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    MBR350 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR350 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBR350 International Rectifier Schottky Rectifier Original PDF
    MBR350 Unknown SCHOTTKY RECTIFIER 3.0 Amp Original PDF
    MBR350 On Semiconductor Axial Lead Rectifiers Original PDF
    MBR350 Microsemi Schottky Rectifier Scan PDF
    MBR350 Motorola Switchmode Datasheet Scan PDF
    MBR350 Motorola European Master Selection Guide 1986 Scan PDF
    MBR350 Motorola Axial Lead Rectifiers Scan PDF
    MBR350 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MBR3505 DC Components TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER Original PDF
    MBR3505W DC Components TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER Original PDF
    MBR350/D On Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
    MBR350-D On Semiconductor Axial Lead Rectifiers Original PDF
    MBR350P Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MBR350RL On Semiconductor SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES Original PDF
    MBR350RL On Semiconductor 3A 50V Schottky Rectifier Original PDF
    MBR350RLG On Semiconductor 3A 50V Schottky Rectifier Original PDF
    MBR350TR International Rectifier 50V 3A Schottky Discrete Diode in a DO-201AD package Original PDF

    MBR350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy


    Original
    PDF VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 2002/95/EC DO-201AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR350 -M3 , VS-MBR360 (-M3) www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy


    Original
    PDF VS-MBR350 VS-MBR360 DO-201AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MBR360

    Abstract: B350 B360 MBR350 MBR350RL MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    PDF MBR350, MBR360 MBR360 r14525 MBR350/D B350 B360 MBR350 MBR350RL MBR360RL

    MOTOROLA B360

    Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
    Text: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    PDF MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 MOTOROLA B360 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350

    MBR360

    Abstract: Marking B360 B350 B360 MBR350 MBR350RL MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    PDF MBR350, MBR360 MBR360 MBR350/D Marking B360 B350 B360 MBR350 MBR350RL MBR360RL

    MOTOROLA SEMICONDUCTOR B360

    Abstract: MOTOROLA B360 MBR360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola
    Text: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR350 MBR360 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    PDF MBR350/D MBR350 MBR360 MBR360 DeviceMBR350/D MOTOROLA SEMICONDUCTOR B360 MOTOROLA B360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola

    MBR360

    Abstract: 20594 MBR350 MR360
    Text: Bulletin PD-20594 04/01 MBR350 MBR360 3.0 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM The MBR350, MBR360 axial leaded Schottky rectifier has


    Original
    PDF PD-20594 MBR350 MBR360 MBR350, MBR360 MR360 20594 MBR350 MR360

    MBR360

    Abstract: No abstract text available
    Text: MBR350/MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for


    Original
    PDF MBR350/MBR360 MBR350, MBR360 18-Jul-08

    MBR360

    Abstract: No abstract text available
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    PDF MBR350, MBR360 MBR360

    B350

    Abstract: B360 MBR350 MBR350RL MBR360 MBR360RL mbr360l
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    PDF MBR350, MBR360 MBR360 r14525 MBR350/D B350 B360 MBR350 MBR350RL MBR360RL mbr360l

    Untitled

    Abstract: No abstract text available
    Text: MBR350, MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    PDF MBR350, MBR360 MBR360 11-Mar-11

    MBR350

    Abstract: MBR360 MR360 20594
    Text: Bulletin PD-20594 rev. A 03/02 MBR350 MBR360 SCHOTTKY RECTIFIER 3.0 Amp Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM IFSM @ tp = 5 µs sine 460 A VF @ 3 Apk, TJ = 25°C


    Original
    PDF PD-20594 MBR350 MBR360 MBR350, MBR360 MR360 MBR350 MR360 20594

    3504W

    Abstract: MBR3505 MBR351 MBR352 MBR354
    Text: MBR3505 THRU MBR3510 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation


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    PDF MBR3505 MBR3510 MBR-25 MIL-STD-202E, KBPC35005W MB3505W KBPC3510W MB3510W 3504W MBR3505 MBR351 MBR352 MBR354

    MBR360

    Abstract: MBR350
    Text: MBR350 ~ MBR360 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 3.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free


    Original
    PDF MBR350 MBR360 DO-201AD DO-201AD UL94V-O MIL-STD-202, MBR360 MBR350

    MBR360RLG

    Abstract: MBR350 MBR350RL MBR350RLG MBR360 MBR360G MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    PDF MBR350, MBR360 MBR360 Gram360RL MBR360RLG BRD8011/D. DO-201AD) MBR360RLG MBR350 MBR350RL MBR350RLG MBR360G MBR360RL

    C-16

    Abstract: MBR350 MBR360
    Text: MBR350, MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    PDF MBR350, MBR360 MBR360 11-Mar-11 C-16 MBR350

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy


    Original
    PDF VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 2002/95/EC DO-201AD 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: MBR350 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)65’ V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)9.4


    Original
    PDF MBR350 Voltage50 Current600u Current20m StyleDO-204AE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan
    PDF MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 b3b72Â MBR320

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA A x ia l L e a d R e c tifie r s MBR350 MBR360 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with


    OCR Scan
    PDF MBR350/D

    MBR360

    Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan
    PDF MBR320, MBR330, MBR340, MBR350, MBR360 MBR360 MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340

    MBR360

    Abstract: motorola b330
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan
    PDF MBR320 MBR340 MBR330 MBR350 MBR360 BR340 MBR360 motorola b330

    MBR360

    Abstract: Diode MBR350
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan
    PDF MBR320 MBR340 MBR330 MBR350 MBR360 MBR360 MBR320, MBR330, MBR340, Diode MBR350

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan
    PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"