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    MBR150 Price and Stock

    onsemi MBR150RLG

    DIODE SCHOTTKY 50V 1A AXIAL
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    DigiKey MBR150RLG Cut Tape 15,816 1
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    MBR150RLG Reel 15,000 5,000
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    Avnet Americas MBR150RLG Reel 40,000 14 Weeks 5,000
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    Mouser Electronics MBR150RLG 5,637
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    Newark MBR150RLG Bulk 4,880 5
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    RS MBR150RLG Bulk 5
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    Onlinecomponents.com MBR150RLG 5,000
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    Bristol Electronics MBR150RLG 4,900 13
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    Quest Components MBR150RLG 3,920
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    ComSIT USA MBR150RLG 7,802
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    Richardson RFPD MBR150RLG 10,000
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    Avnet Silica MBR150RLG 15 Weeks 5,000
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    EBV Elektronik MBR150RLG 16 Weeks 5,000
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    IBS Electronics MBR150RLG 1,000
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    Master Electronics MBR150RLG 5,000
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    onsemi MBR150

    DIODE SCHOTTKY 50V 1A AXIAL
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    DigiKey MBR150 Bulk
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    Component Electronics, Inc MBR150 129
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    Maritex MBR150 46
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    Rochester Electronics LLC MBR150G

    DIODE SCHOTTKY 50V 1A AXIAL
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    DigiKey MBR150G Bulk 3,139
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    onsemi MBR150G

    DIODE SCHOTTKY 50V 1A AXIAL
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    DigiKey MBR150G Bulk
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    Rochester Electronics MBR150G 59,492 1
    • 1 $0.0919
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    Chip One Stop MBR150G Bulk 550
    • 1 $0.102
    • 10 $0.0971
    • 100 $0.0831
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    Flip Electronics MBR150G 4,000
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    onsemi MBR150RL

    DIODE SCHOTTKY 50V 1A AXIAL
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    DigiKey MBR150RL Reel
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    MBR150RL Cut Tape
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    Bristol Electronics MBR150RL 3,020 13
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    • 10000 $0.0825
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    Quest Components MBR150RL 2,416
    • 1 $0.55
    • 10 $0.55
    • 100 $0.165
    • 1000 $0.11
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    MBR150RL 2,416
    • 1 $0.55
    • 10 $0.55
    • 100 $0.165
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    MBR150RL 2,372
    • 1 $0.2676
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    • 100 $0.2676
    • 1000 $0.1427
    • 10000 $0.116
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    MBR150RL 2,372
    • 1 $0.2676
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    • 100 $0.2676
    • 1000 $0.1427
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    MBR150 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR150 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBR150 International Rectifier Schottky Rectifier Original PDF
    MBR150 Motorola SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 50, 60 VOLTS Original PDF
    MBR150 On Semiconductor Axial Lead Rectifiers Original PDF
    MBR150 On Semiconductor 1A 50V Schottky Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Bulk; Qty per Container: 1000 Original PDF
    MBR150 On Semiconductor Axial Lead Rectifier Original PDF
    MBR150 Microsemi Schottky Rectifier Scan PDF
    MBR150 Motorola Switchmode Datasheet Scan PDF
    MBR150 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MBR15005 HY Electronic SILICON BRIDGE RECTIFIERS Original PDF
    MBR15005 HY Electronic SILICON BRIDGE RECTIFIERS Original PDF
    MBR-1503 Maxrad Omni-directional Base Station Original PDF
    MBR1505 DC Components TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER Original PDF
    MBR1505W DC Components TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER Original PDF
    MBR150/D On Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
    MBR150-D On Semiconductor Axial Lead Rectifiers Original PDF
    MBR150G On Semiconductor 1A 50V Schottky Rectifier Original PDF
    MBR150RL On Semiconductor 1A 50V Schottky Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    MBR150RL On Semiconductor Axial Lead Rectifier Original PDF
    MBR150RL On Semiconductor 1A 50V Schottky Rectifier Original PDF

    MBR150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 2002/95/EC DO-204AL DO-41) 2011/65/EU 2002/95/EC. PDF

    DO-204AL

    Abstract: MBR150 MBR160
    Text: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    MBR150, MBR160 DO-204AL MBR160 11-Mar-11 DO-204AL MBR150 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 DO-204AL 2002/95/EC DO-41) 2002/95/EC. 2002/95/EC PDF

    MBR150

    Abstract: No abstract text available
    Text: Bulletin PD-20589 rev. C 12/04 MBR150 MBR160 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/ Features The MBR150, MBR160 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching


    Original
    PD-20589 MBR150 MBR160 MBR150, MBR160 08-Mar-07 MBR150 PDF

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER MBR150- - -MBR160 VOLTAGE RANGE: 60 V CURRENT: 1.0 A FEATURES DO - 41 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free


    Original
    MBR150- -MBR160 DO--41 STD-202 PDF

    B150

    Abstract: B160 MBR150 MBR160
    Text: MOTOROLA Order this document by MBR150/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR150 MBR160 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    MBR150/D MBR150 MBR160 MBR160 B150 B160 MBR150 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    MBR150, MBR160 MBR160 MBR150/160 MBR150/D PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS MBR150-MBR160 1A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified forward current 1 (VR(equiv) ≤ 0.2VR(dc), RӨJA = 80°C/W, PC board mounting, TA = 55°C)


    Original
    MBR150-MBR160 MBR160 MBR150 MIL-PRF-19500, PDF

    DO-204AL

    Abstract: MBR150 MBR160
    Text: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    MBR150, MBR160 DO-204AL MBR160 18-Jul-08 DO-204AL MBR150 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    MBR150, MBR160 MBR160 MBR150/160 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 DO-204AL 2002/95/EC DO-41) 2011/65/EU 2002/95/EC. PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    MBR150, MBR160 DO-204AL MBR160 11-Mar-11 PDF

    MBR150

    Abstract: DO-204AL MBR160
    Text: Bulletin PD-20589 rev. B 03/03 MBR150 MBR160 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/ Features Characteristics MBR150 MBR160 Units IF AV Rectangular 1.0 A 50/60 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 150


    Original
    PD-20589 MBR150 MBR160 MBR150, MBR160 MBR150 DO-204AL PDF

    B150

    Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    MBR150, MBR160 MBR160 r14525 MBR150/D B150 B160 MBR150 MBR150RL MBR160RL PDF

    154w

    Abstract: MBR1505 MBR151 MBR152 MBR154
    Text: MBR1505 THRU MBR1510 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation


    Original
    MBR1505 MBR1510 MBR-25 MIL-STD-202E, 300ms 154w MBR1505 MBR151 MBR152 MBR154 PDF

    MBR150

    Abstract: MBR160
    Text: MBR150 ~ MBR160 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free


    Original
    MBR150 MBR160 DO-41 UL94V-O MIL-STD-202, MBR150 MBR160 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 2002/95/EC DO-204AL DO-41) 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    MBR150, MBR160 MBR160 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    MBR150, MBR160 MBR160 MBR150/160 MBR150/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR150/MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for


    Original
    MBR150/MBR160 DO-204AL MBR150, MBR160 18-Jul-08 PDF

    1117T

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR150/D SEM ICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers MBR150 MBR160 . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan
    MBR150/D b3b72SS ------------------MBR150/D 1117T PDF

    MBR120

    Abstract: DO-213AB GLASS Schottky DSAIH00025395 MBR130
    Text: DO-41 Glass 1 Amp Schottky Rectifier MBR115 thru MBR150 Use Advantages Low forward voltage drop. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss. Used in low voltage power supplies, high frequency inverters and converters,


    OCR Scan
    DO-41 MBR115 MBR150 100mA MBR120 MBR130 MBR140 DO-213AB GLASS Schottky DSAIH00025395 PDF

    B150

    Abstract: B160 MBR150 MBR160
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR150 MBR160 A x ia l Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan
    PDF

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan
    1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" PDF