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    Taiwan Semiconductor MBR10H200CT C0

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    MBR10H200CT C0 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR10H200CT C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 10A TO220AB Original PDF

    MBR10H200CT C0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10H150CT

    Abstract: MBR10H100CT
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT 10H150CT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059

    Schottky

    Abstract: MBR10H200CT C0
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308059 Schottky MBR10H200CT C0

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB

    MBR10H100CT

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor