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    MBR10H100CT Search Results

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    MBR10H100CT Price and Stock

    Vishay Semiconductors MBR10H100CT-E3/45

    DIODE ARR SCHOTT 100V 5A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR10H100CT-E3/45 Tube 1,036 1
    • 1 $1.64
    • 10 $1.64
    • 100 $1.0406
    • 1000 $0.71848
    • 10000 $0.61443
    		Buy Now

    onsemi MBR10H100CT

    DIODE ARR SCHOTT 100V 5A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR10H100CT Tube
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    Bristol Electronics MBR10H100CT 150 4
    • 1 -
    • 10 $1.3125
    • 100 $0.4922
    • 1000 $0.4922
    • 10000 $0.4922
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    Quest Components MBR10H100CT 120
    • 1 $1.75
    • 10 $1.75
    • 100 $0.525
    • 1000 $0.525
    • 10000 $0.525
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    Taiwan Semiconductor MBR10H100CT

    DIODE ARR SCHOT 100V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR10H100CT Tube
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    Avnet Americas MBR10H100CT Tube 8 Weeks 1,000
    • 1 -
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    • 1000 $0.44734
    • 10000 $0.4167
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    Mouser Electronics MBR10H100CT 900
    • 1 $1.02
    • 10 $0.835
    • 100 $0.649
    • 1000 $0.448
    • 10000 $0.402
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    onsemi MBR10H100CTG

    DIODE ARR SCHOTT 100V 5A TO220
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    DigiKey MBR10H100CTG Tube
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    Quest Components MBR10H100CTG 50
    • 1 $0.9573
    • 10 $0.7978
    • 100 $0.5744
    • 1000 $0.5744
    • 10000 $0.5744
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    Rochester Electronics MBR10H100CTG 72,717 1
    • 1 $0.5005
    • 10 $0.5005
    • 100 $0.4705
    • 1000 $0.4254
    • 10000 $0.4254
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    onsemi MBR10H100CTH

    DIODE ARR SCHOTT 100V 5A TO220
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    Find more MBR10H100CT price and stock on Findchips.com

    MBR10H100CT Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR10H100CT General Semiconductor Dual High-Voltage Schottky Rectifier Original PDF
    MBR10H100CT On Semiconductor 100V, 10A SWITCHMODE Power Rectifier Original PDF
    MBR10H100CT Taiwan Semiconductor 10.0 AMPS. Schottky Barrier Rectifiers Original PDF
    MBR10H100CT Vaishali Semiconductor MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Original PDF
    MBR10H100CT C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 100V TO220 Original PDF
    MBR10H100CT-E3/45 Vishay Semiconductors Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 5A TO220AC Original PDF
    MBR10H100CT-E3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY DUAL CC TO220 Original PDF
    MBR10H100CTG On Semiconductor 10A 100V H-Series Schottky Rectifier Original PDF
    MBR10H100CTHE3/45 Vishay Semiconductors Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 5A TO220AC Original PDF

    MBR10H100CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR10H100CT

    Abstract: MBRB10H90CT MBR10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
    Text: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Dual High-Voltage Schottky Rectifiers t Reverse Voltage 90 to 100V c u Forward Current 10A rod P ITO-220AB New MBRF10H90CT, MBRF10H100CT TO-220AB (MBR10H90CT, MBR10H100CT) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)


    Original     		PDF MBR10H100CT, MBRF10H100CT MBRB10H100CT ITO-220AB MBRF10H90CT, MBRF10H100CT) O-220AB MBR10H90CT, MBR10H100CT) MBR10H100CT MBRB10H90CT MBR10H90CT MBRF10H100CT MBRF10H90CT

    MBR10H200CT

    Abstract: MBR10H100CT
    Text: RATINGS AND CHARACTERISTIC CURVES MBR10H100CT THRU MBR10H200CT Version: E10


    Original     		PDF MBR10H100CT MBR10H200CT) MBR10H200CT

    Schottky

    Abstract: MBR10H200CT C0
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308059 Schottky MBR10H200CT C0

    MBRB10H90CT

    Abstract: MBRF10H90CT MBR10H90CT MBRB10H100CT MBR10H100CT MBRF10100CT MBRF10H100CT mbr 22 14FEB02
    Text: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)


    Original     		PDF MBR10H100CT, MBRF10H100CT MBRB10H100CT ITO-220AB MBRF10H90CT, MBRF10H100CT) O-220AB MBR10H90CT, MBR10H100CT) 14-Feb-02 MBRB10H90CT MBRF10H90CT MBR10H90CT MBR10H100CT MBRF10100CT MBRF10H100CT mbr 22 14FEB02

    MBR10H100CT

    Abstract: MBRB10H90CT mbrf 100 ct MBR10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
    Text: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Dual High-Voltage Schottky Rectifiers t c u rod ITO-220AB P New Reverse Voltage 90 to 100V Forward Current 10A MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54)


    Original     		PDF MBR10H100CT, MBRF10H100CT MBRB10H100CT uITO-220AB MBRF10H90CT, MBRF10H100CT) O-220AB MBR10H90CT, MBR10H100CT) MBR10H100CT MBRB10H90CT mbrf 100 ct MBR10H90CT MBRF10H100CT MBRF10H90CT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059

    B10H100G

    Abstract: B10H100
    Text: MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg


    Original     		PDF MBR10H100CT MBR10H100CT/D B10H100G B10H100

    MBR10H90CT

    Abstract: No abstract text available
    Text: MBR F,B 10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB MBR10H90CT MBR10H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 MBRF10H90CT


    Original     		PDF 10H90CT 10H100CT O-220AB ITO-220AB MBR10H90CT MBR10H100CT MBRF10H90CT MBRF10H100CT O-263AB J-STD-020C,

    B10H100

    Abstract: MBR10H100CT MBR10H100CTG
    Text: MBR10H100CT SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg


    Original     		PDF MBR10H100CT MBR10H100CT/D B10H100 MBR10H100CT MBR10H100CTG

    MBR10H200CT

    Abstract: 10H150CT MBR10H100CT
    Text: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, 50mVp-p MBR10H200CT 10H150CT

    MBRB10H90CT

    Abstract: MBR10H90CT
    Text: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)


    Original     		PDF MBR10H100CT, MBRF10H100CT MBRB10H100CT ITO-220AB MBRF10H90CT, MBRF10H100CT) O-220AB MBR10H90CT, MBR10H100CT) 08-Apr-05 MBRB10H90CT MBR10H90CT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB

    MBRF10H90CT

    Abstract: MBR10H100CT MBR10H90CT MBRB10H90CT MBRB10H100CT MBRF10H100CT
    Text: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)


    Original     		PDF MBR10H100CT, MBRF10H100CT MBRB10H100CT ITO-220AB MBRF10H90CT, MBRF10H100CT) O-220AB MBR10H90CT, MBR10H100CT) 30-Jul-02 MBRF10H90CT MBR10H100CT MBR10H90CT MBRB10H90CT MBRF10H100CT

    MBR10H100CT

    Abstract: MBR10H90CT MBRB10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
    Text: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)


    Original     		PDF MBR10H100CT, MBRF10H100CT MBRB10H100CT ITO-220AB MBRF10H90CT, MBRF10H100CT) O-220AB MBR10H90CT, MBR10H100CT) 24-Apr-03 MBR10H100CT MBR10H90CT MBRB10H90CT MBRF10H100CT MBRF10H90CT

    B10H100G

    Abstract: B10H100 MBR10H100CT MBR10H100CTG *10h100g
    Text: MBR10H100CT SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg


    Original     		PDF MBR10H100CT MBR10H100CT/D B10H100G B10H100 MBR10H100CT MBR10H100CTG *10h100g

    MBR10H100CT

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059

    10H150CT

    Abstract: 10H200CT
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART Pb 10.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB 300uS 50mVp-p 10H150CT 10H200CT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB

    10H150CT

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT Pb RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers Switchmode Power Rectifiers TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, 50mVp-p 10H150CT

    B10H100G

    Abstract: rectifier diode 6 amp 400 volt B10H100 100-20 diode single phase full wave rectifier MBR10H100CT MBR10H100CTG *10h100g
    Text: MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg


    Original     		PDF MBR10H100CT MBR10H100CT/D B10H100G rectifier diode 6 amp 400 volt B10H100 100-20 diode single phase full wave rectifier MBR10H100CT MBR10H100CTG *10h100g

    10H150CT

    Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
    Text: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction


    OCR Scan     		PDF MBR10H100CT MBR10H200CT O-220AB 35inm IF-10A. 12rsc 10H150CT 10H150 MBR10H200CT CAAF 10H200CT MBR10H200

    10h100c

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars


    OCR Scan     		PDF MBR10H100CT MBR10H200CT 10H150CT 10H20QCT 30CKI« 10h100c

    1da marking

    Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
    Text: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion


    OCR Scan     		PDF MBR10H100CT MBR10H200CT O-220AB 1da marking MBR10H200CT TV125 MARKING CODE 1DA