Untitled
Abstract: No abstract text available
Text: CUS08F30 Schottky Barrier Diode Silicon Epitaxial CUS08F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit
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CUS08F30
OD-323
SC-76
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SMC MARKING Sk
Abstract: SK520C
Text: SK52C - SK520C CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features For surface mounted application Metal to sillicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability
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SK52C
SK520C
SMC/DO-214AB
J-STD-020D,
RS-481
SMC MARKING Sk
SK520C
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Untitled
Abstract: No abstract text available
Text: SSH210 CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Pb RoHS COMPLIANCE Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency
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SSH210
260/10s
RS-481
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PDF
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Untitled
Abstract: No abstract text available
Text: CMS15 TOSHIBA Schottky Barrier Diode CMS15 Switching Mode Power Supply Applications Output voltage: ≤12 V Unit: mm DC/DC Converter Applications • • • • Forward voltage: VFM = 0.58 V (max) Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 60 V
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CMS15
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6045pt
Abstract: MBR6050PT-60100PT PT-60 MBR60XXPT
Text: MBR6035PT - MBR60100PT CREAT BY ART Pb 60.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBR6035PT
MBR60100PT
O-3P/TO-247AD
E-326243
MBR6035PT-6045PT
MBR6035PT-MBR6045PT
MBR6050PT-MBR60100PT
6045pt
MBR6050PT-60100PT
PT-60
MBR60XXPT
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PDF
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Untitled
Abstract: No abstract text available
Text: CRS02 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS02 Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm • Low forward voltage: VFM = 0.40 V max • Average forward current: IF (AV) = 1.0 A • Repetitive peak reverse voltage: VRRM = 30 V
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CRS02
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PDF
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Untitled
Abstract: No abstract text available
Text: SK22A - SK215A CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place
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SMA/DO-214AC
SK22A
SK215A
RS-481
millime9A-SK210A
SK25A-SK26A
300us
2A-24A
5A-26A
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PDF
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MBR40200
Abstract: MBR 40150 MBR40150 4045 pt
Text: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBR4035PT
MBR40200PT
O-3P/TO-247AD
E-326243
O-3P/TO-247AD
300us
MBR40150PT-40200PT
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
MBR4090PT-MBR40200PT
MBR40200
MBR 40150
MBR40150
4045 pt
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PDF
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10GWJ2CZ
Abstract: 10GWJ2CZ47C 10MWJ2CZ47
Text: SCHOTTKY BARRIER TYPE RECTIFIER STACK 10GWJ2CZ47C 10 J,M WJ2CZ47 Unit in mm SW ITCHING TY P E POW ER SU PPLY APPLICATIO N . CO M VERTER & CHOPPER APPLICATIO N . - 10.3 MAX • • • 03.2 ±0-2 Repetitive Peak Reverse Voltage : V r r m = 40, 60, 90V
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10GWJ2CZ47C
WJ2CZ47
10JWJ2CZ47
10MWJ2CZ47
J2CZ47)
10GWJ2CZ47C)
10GWJ2CZ
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature
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1SS315
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PDF
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Untitled
Abstract: No abstract text available
Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this
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OCR Scan
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UC1610
UC3610
UC3610
ambient40V
UC1611
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PDF
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12-10D1A
Abstract: TOSHIBA RECTIFIER
Text: U U T V J £ * t 0 0 SCHOTTKY BARRIER TYPE RECTIFIER STACK U5GWJ2C48C SWITCHING TYPE POWER SUPPLY APPLICATON. CONVERTER & CHOPPER APPLICATION. • • • Repetitive Peak Reverse Voltage : V r r m = 40V Average Output Rectified Current : I = 5A Low Switching Losses and Output Noise.
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U5GWJ2C48C
5GWJ2C48C
12-10D1A
12-10D2A
5GWJ2C48C,
U5GWJ2C48C
12-10D1A
TOSHIBA RECTIFIER
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PDF
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Untitled
Abstract: No abstract text available
Text: y UC1711 UC3711 UNITRODE Dual Ultra High-Speed FET Driver 15ns Propagation Delay 1.5A Source or Sink Output Drive Operation with 5V to 35V Supply High-Speed Schottky NPN Process 8-PIN MINIDIP Package ABSOLUTE MAXIMUM RATINGS note 1 Input Supply Voltage, V c c . 40V
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UC1711
UC3711
10OOpF
UC1709
UC1711.
UC1711,
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PDF
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microstep drive STEPPER MOTOR
Abstract: 1045V "Stepper Drive" UC3770
Text: Motor Controls Stopper Motors UC3717A Stepper Motor Drive Circuit • Improved version of industry standard • Full step, half-step and micro-step capability • Output currents up to 1.2A • Supply voltage 10-45V • Built-in fast recovery Schottky commutating diodes
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UC3717A
0-45V
16-pin
UC3770
UC3717,
500mA
microstep drive STEPPER MOTOR
1045V
"Stepper Drive"
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)
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1SS395
SS395
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5FW J2C48M ,U 5FW J2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 5FWJ2C48M, U5FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage : V r r m = 30V • Average Output Rectified Current
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J2C48M
5FWJ2C48M,
U5FWJ2C48M
5FWJ2C48M
12-10D1A
12-10D2A
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SH02F/FU 2-Input NOR Gate The TC7SH02 is an advanced high speed CMOS 2-Input NOR Gate fab ricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar SchottkyTTL while maintaining the
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TC7SH02
TC7SH02F/FU
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o
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1SS384
SS384
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •
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OCR Scan
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1SS294
SS294
SC-59
O-236MOD
SC-59
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PDF
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12V electromagnetic relay
Abstract: Relay coil electromagnetic relay 8 pin UG3702 relay 5v 6 pin 5v 12v relay
Text: UC1702 UC2702 UC3702 UNITROOE Quad PWM Relay Driver FEATURES • Maintains Constant Average Relay Voltage With Varying Supply Voltages • VBUS Voltages up to 42,5V • Up to 50mA per Relay • Integrated Schottky Flyback Diodes • Individual Relay Control Inputs
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UC1702
UC2702
UC3702
UC3702
UC3702.
12V electromagnetic relay
Relay coil
electromagnetic relay 8 pin
UG3702
relay 5v 6 pin
5v 12v relay
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)
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1SS344
961001EAA2'
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PDF
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2FWJ42
Abstract: No abstract text available
Text: TO SHIBA 2FWJ42M TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 2FWJ42M Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION • • • • Repetitive Peak Reverse Voltage Average Forward Current Low Forward Voltage
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2FWJ42M
CHARACTERIS12-04
2FWJ42
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PDF
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uc2710
Abstract: No abstract text available
Text: UC1710 UC2710 UC3710 UNITROOE High Current FET Driver FEATURES DESCRIPTION • Totem Pole Output with 6A Source/Sink Drive The UC1710 family of FET drivers is made with a high-speed Schottky pro cess to interface between low-level control functions and very higfi-power
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OCR Scan
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UC1710
UC2710
UC3710
UC3710
200kHz
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PDF
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Untitled
Abstract: No abstract text available
Text: TC74AC86P/F/FN QUAD E X C L U SI V E OR GATE The TC74AC86 is an advanced high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate and do u ble-layer m etal w iring C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the
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TC74AC86P/F/FN
TC74AC86
AC-111
TC74AC86P
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PDF
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