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    MBR10H200CT Search Results

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    MBR10H200CT Price and Stock

    Taiwan Semiconductor MBR10H200CT

    DIODE ARR SCHOT 200V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR10H200CT Tube 846 1
    • 1 $0.89
    • 10 $0.89
    • 100 $0.565
    • 1000 $0.39014
    • 10000 $0.33364
    		Buy Now
    Avnet Americas MBR10H200CT Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.38894
    • 10000 $0.3623
    		Buy Now
    Mouser Electronics MBR10H200CT
    • 1 $0.88
    • 10 $0.726
    • 100 $0.564
    • 1000 $0.367
    • 10000 $0.333
    		Get Quote

    Taiwan Semiconductor MBR10H200CTH

    DIODE ARR SCHOT 200V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR10H200CTH Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.46835
    • 10000 $0.46835
    		Buy Now
    Avnet Americas MBR10H200CTH Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.46691
    • 10000 $0.43493
    		Buy Now
    Mouser Electronics MBR10H200CTH
    • 1 $1.06
    • 10 $0.872
    • 100 $0.678
    • 1000 $0.468
    • 10000 $0.4
    		Get Quote

    Taiwan Semiconductor MBR10H200CT C0

    - Rail/Tube (Alt: MBR10H200CT C0)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MBR10H200CT C0 Tube 1,000
    • 1 -
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    • 10000 -
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    MBR10H200CT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR10H200CT Taiwan Semiconductor 10.0 AMPS. Schottky Barrier Rectifiers Original PDF
    MBR10H200CT C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 10A TO220AB Original PDF

    MBR10H200CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR10H200CT

    Abstract: MBR10H100CT
    Text: RATINGS AND CHARACTERISTIC CURVES MBR10H100CT THRU MBR10H200CT Version: E10


    Original     		PDF MBR10H100CT MBR10H200CT) MBR10H200CT

    Schottky

    Abstract: MBR10H200CT C0
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308059 Schottky MBR10H200CT C0

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059

    MBR10H200CT

    Abstract: 10H150CT MBR10H100CT
    Text: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, 50mVp-p MBR10H200CT 10H150CT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB

    MBR10H100CT

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059

    10H150CT

    Abstract: 10H200CT
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART Pb 10.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB 300uS 50mVp-p 10H150CT 10H200CT

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB

    10H150CT

    Abstract: No abstract text available
    Text: MBR10H100CT - MBR10H200CT Pb RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers Switchmode Power Rectifiers TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, 50mVp-p 10H150CT

    10H150CT

    Abstract: MBR10H100CT
    Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT 10H150CT

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    10H150CT

    Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
    Text: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction


    OCR Scan     		PDF MBR10H100CT MBR10H200CT O-220AB 35inm IF-10A. 12rsc 10H150CT 10H150 MBR10H200CT CAAF 10H200CT MBR10H200

    10h100c

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars


    OCR Scan     		PDF MBR10H100CT MBR10H200CT 10H150CT 10H20QCT 30CKI« 10h100c