2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
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MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
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KYS 30 40 diode
Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching
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30kHz
1560A
4bflb55b
Q000S1S
IXSH20N60
IXSM20N60
KYS 30 40 diode
40n60 transistor
mos 30N60
2355Z
wiom DC
IXYS 30N60
of ic 3915
1XYS
30N60T
35N100
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX30SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm .4.5. 15.9 max 1.5 S S < >3.2 hf 4 T Î © 5.45 0.6 T P1 T • 4 V D R IV E •V dss .-1 0 0 V
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FX30SMJ-2
100ns
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FX50SMJ-2
Abstract: FX50SMJ
Text: MITSUBISHI Pch POWER MOSFET FX50SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5. 15.9 max 1.5 | 3.2 kr 4.4 1.0 © 5.45 5.45 0.6 o • 4V DRIVE • V d s s .-100V
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FX50SMJ-2
FX50SMJ-2
-100V
50mi2
100ns
FX50SMJ
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MOSFET 20 NE 50 Z
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS100SMJ-03 HIGH-SPEED SWITCHING USE FS100SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX f 3.2 5.45 0.6 o i 4V DRIVE V d s s . 3 0 V rDS ON (
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FS100SMJ-03
100ns
571Q-123
MOSFET 20 NE 50 Z
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Untitled
Abstract: No abstract text available
Text: HIP2060 Semiconductor 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that con sists of two matched N-Channel enhancement-mode MOS transistors. The advanced Harris PASIC2 process technol
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HIP2060
HIP2060
S-001AA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30SMJ-03 HIGH-SPEED SWITCHING USE FS30SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. / 3.2 w * 5.45 4 V D R IV E V d s s . 3 0 V q rDS ON (MAX). 38m i2
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FS30SMJ-03
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FX30UMJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX30UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30UMJ-3 OUTLINE DRAWING Dimensions in mm • 4 V D R IV E • V dss .-1 5 0 V . • rDS O N (M AX) . . 100m i2 • Id . . -3 0 A
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FX30UMJ-3
100ns
O-220
FX30UMJ-3
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D03316P-333
Abstract: CI LT1372 D03316P-683 metal film fused resistor 47 1N5818 1N914 LT1507 LT1578 LT1578C LT1578CS8
Text: D M U M L R E L E A S E Final Electrical Specifications LT1578 u f m TECHNOLOGY 1.5A, 200kHz S tep-D ow n S w itching R egulator S ep tem b er 1999 FCRTURCS D C S C R IP TIO n • Constant 200kHz Switching Frequency ■ Reduced EM I Generation The LT 1578 is a 200kHz monolithic buck mode switching
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200kHz
400kHz
20joA
LT1578
necess377
500kHz
LTC1622
500kHz,
D03316P-333
CI LT1372
D03316P-683
metal film fused resistor 47
1N5818
1N914
LT1507
LT1578
LT1578C
LT1578CS8
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mosfet 350v 30a
Abstract: No abstract text available
Text: APT5010JVRU2 A D VA N C ED P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVRU2
OT-227
APT5010JVRU2
OT-227
mosfet 350v 30a
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MOSFET 20 NE 50 Z
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE FS100VSJ-03 OUTLINE DRAWING Dim ensions in mm L J q w e 6 +i CD Q w r q w e r 4V DRIVE V dss . 3 0 V rDS ON (M A X ). A.7mLl
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FS100VSJ-03
100ns
O-22QS
57KH23
MOSFET 20 NE 50 Z
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Narva
Abstract: TX5B Heft 54 Scans-048 aim ac hoe rv heft hcj 6a IH400 siek 1 AE 1000-SS
Text: p,. c . r y p / i E B C n o n P A H O H H b I M B O n P M H H H B O P A M H 3 A aT e/ibC T B o „ T e x H iK a " K m ob — 1 9 7 0 M 6<D0. 31 0 8 3 T95 YAK 621.327.4/9.(031) CnpaBOHHHK no hohhum npnöopaM. T y p .n e b R . C. «TexHÍK», 1970, 180 crp.
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2T908A
Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,
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T-0574D.
30Eiaa
Coi03nojiH
2T908A
2T602
2T907A
KT604
1HT251
1T813
2t903
KT920A
PO6 115.05
KT117
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 ' 4V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 75mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control
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FS10ASJ-03
75mi2
571Q-22
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up 6103 s8 equivalent
Abstract: up 6103 s8 CI LT1372 metal film fused resistor 47 1N5818 1N914 LT1376 LT1576 LT1576C LT1576CS8
Text: r r u LT1576/LT1576-5 im i TECHNOLOGY 1.5A, 200kHz S tep-D ow n S w itching R egulator F€fflTUR€S D C S C R IP TIO n • Constant 200kHz Switching Frequency ■ 1.21V Reference Voltage ■ Fixed 5V Output Option ■ Easily Synchronizable ■ Uses All Surface Mount Components
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200kHz
20joA
LT1576/LT1576-5
LT1372/LT1377
500kHz
LT1374
LT1376
up 6103 s8 equivalent
up 6103 s8
CI LT1372
metal film fused resistor 47
1N5818
1N914
LT1576
LT1576C
LT1576CS8
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"MOSFET A5 VNA
Abstract: 710023
Text: MITSUBISHI Pch POWER MOSFET FX30SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 . 15.9 m ax 1.5 | 3.2 mr ¥ b f * © 5 .4 5 0.6 0( • 4 V D R IV E • V ds s .-1 5 0 V
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FX30SMJ-3
FX30SMJ-3
-150V
10Omii
100ns
57KH2
571Q12
"MOSFET A5 VNA
710023
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40n60 transistor
Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Text: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching
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1560A
30kHz
IXSH20N60
IXSM20N60
Tj-125
40n60 transistor
30N60
40n60
30N60A
40n60 igbt
17N10
wiom DC
transistor JE 1090
20N60A
igbt equivalent to 40n60
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE ¡ FS30KMH-03 OUTLINE DRAWING Dimensions in mm +0 / ./ / ' / ' • 2.5V DRIVE • VD S S . •■ 30V • rDS ON (MAX) .
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FS30KMH-03
O-220FN
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