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    04N03 Search Results

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    04N03 Price and Stock

    onsemi NVTYS004N03CLTWG

    T6 30V N-CH LL IN LFPAK33
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    DigiKey NVTYS004N03CLTWG Cut Tape 2,965 1
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    Avnet Americas NVTYS004N03CLTWG Reel 17 Weeks 3,000
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    Newark NVTYS004N03CLTWG Reel 3,000
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    Rochester Electronics NVTYS004N03CLTWG 5,950 1
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    EBV Elektronik NVTYS004N03CLTWG 19 Weeks 3,000
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    Infineon Technologies AG IPT004N03LATMA1

    MOSFET N-CH 30V 300A 8HSOF
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    DigiKey IPT004N03LATMA1 Cut Tape 1,977 1
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    IPT004N03LATMA1 Digi-Reel 1,977 1
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    IPT004N03LATMA1 Reel 1,870 2,000
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    Mouser Electronics IPT004N03LATMA1 9,559
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    IPT004N03LATMA1 Reel 2,000
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    Bristol Electronics IPT004N03LATMA1 37
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    Rochester Electronics IPT004N03LATMA1 87,813 1
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    TME IPT004N03LATMA1 1
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    Chip One Stop IPT004N03LATMA1 Cut Tape 1,795 0 Weeks, 1 Days 1
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    EBV Elektronik IPT004N03LATMA1 8,000 21 Weeks 2,000
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    New Advantage Corporation IPT004N03LATMA1 6,000 1
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    Vyrian IPT004N03LATMA1 11,388
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    Infineon Technologies AG IPD04N03LB-G

    MOSFET N-CH 30V 50A TO252-3
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    DigiKey IPD04N03LB-G Cut Tape 1,119 1
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    IPD04N03LB-G Digi-Reel 1,119 1
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    Infineon Technologies AG IPB04N03LAT

    MOSFET N-CH 25V 80A TO263-3
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    DigiKey IPB04N03LAT Cut Tape 498 1
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    IPB04N03LAT Reel 1,000
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    OMRON Industrial Automation E2E-C04N03-MC-B1

    SENSOR PROX INDUCTIVE 3MM CYLIND
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    DigiKey E2E-C04N03-MC-B1 Bulk 1 1
    • 1 $112.94
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    Find more 04N03 price and stock on Findchips.com

    04N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P-TO252

    Abstract: 04N03 04N03LA IPF04N03LA P-TO252-3-11
    Text: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 4.1 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		IPF04N03LA P-TO252-3-23 P-TO252-3-11 Q67042-S4197 04N03LA P-TO252 04N03 04N03LA IPF04N03LA P-TO252-3-11 PDF

    04N03LA

    Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
    Text: Type OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA 04n03l smd marking D50 P-TO251-3-1 P-TO252-3-11 smd diode marking c3 PDF

    04N03L

    Abstract: 04n03 IPB04N03L IPP04N03L Q67042-S4107
    Text: 04N03L 04N03L Preliminary data OptiMOS Buck converter series Product Summary Feature  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 3.9 m ID 80 A Superior thermal resistance P-TO263-3-2 V


    Original     		IPP04N03L IPB04N03L P-TO263-3-2 P-TO220-3-1 Q67042-S4108 04N03L 04N03L 04n03 IPB04N03L IPP04N03L Q67042-S4107 PDF

    04n03l

    Abstract: TO252-3 IPD04N03LB PG-TO252-3-11 PG-TO252 IPU04N03LB
    Text: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level


    Original     		IPD04N03LB IPU04N03LB IPS04N03LB IPF04N03LB PG-TO252-3-11 PG-TO251-3-11 04n03l TO252-3 PG-TO252-3-11 PG-TO252 PDF

    04N03LA

    Abstract: Q67042-S4177 IPD04N03LA P-TO252-3-11
    Text: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 3.8 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		IPD04N03LA P-TO252-3-11 Q67042-S4177 04N03LA 04N03LA Q67042-S4177 IPD04N03LA P-TO252-3-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP04N03LB PG-TO220-3-1 Q67045-A5034 04N03LB PDF

    IPI04N03LA

    Abstract: diode kv 1236 IPP04N03LA
    Text: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI04N03LA, IPP04N03LA PG-TO262-3-1 PG-TO220-3-1 IPI04N03LA PG-TO262-3-1 04N03LA 04N03LA diode kv 1236 IPP04N03LA PDF

    diode kv 1236

    Abstract: No abstract text available
    Text: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI04N03LA, IPP04N03LA PG-TO262-3-1 PG-TO220-3-1 IPI04N03LA PG-TO262-3-1 04N03LA 04N03LA diode kv 1236 PDF

    04N03L

    Abstract: 04N03LA
    Text: 04N03LA 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mW ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI04N03LA P-TO263-3-2 04N03L 04N03LA PDF

    04n03

    Abstract: 04N03LA
    Text: OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ


    Original     		IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA PG-TO252-3-11 Q67042-S4276 04n03 04N03LA PDF

    04N03LA

    Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
    Text: Type OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA P-TO251-3-1 P-TO252-3-11 PDF

    04n03la

    Abstract: 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177
    Text: OptiMOS 2 Power-Transistor 04N03LA 04N03LA 04N03LA 04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04n03la 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177 PDF

    04N03L

    Abstract: Q67042-S4181 marking code br 39 SMD
    Text: 04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB04N03LA PG-TO263-3-2 Q67042-S4181 04N03LA 04N03L Q67042-S4181 marking code br 39 SMD PDF

    IPS04N03LA G

    Abstract: max5199
    Text: OptiMOS 2 Power-Transistor 04N03LA 04N03LA 04N03LA 04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA IPD04N03LA IPF04N03LA P-TO252-3-11 Q67042-S4177 IPS04N03LA G max5199 PDF

    04N03

    Abstract: sse04n03
    Text: 04N03 80 A, 25 V, RDS ON 5 mΩ N-Channel Logic Level Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-220 The 04N03 provide the designer with the best combination of fast switching, ruggedized device design,


    Original     		SSE04N03 O-220 SSE04N03 O-220) 01-June-2005 04N03 PDF

    04n03la

    Abstract: IPB04N03LA smd diode marking 77 JESD22 diode kv 1236
    Text: 04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB04N03LA PG-TO263 04N03LA 04n03la smd diode marking 77 JESD22 diode kv 1236 PDF

    IPB04N03LB

    Abstract: JESD22 A10080
    Text: 04N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.5 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB04N03LB PG-TO263-3 PG-TO220-3-1 P-TO263-3 04N03LB IPB04N03LB JESD22 A10080 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers


    Original     		PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 983A5F 2009-REV PDF

    to220 pcb footprint

    Abstract: to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3
    Text: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS 25 V • Ideal for high-frequency dc/dc converters R DS on ,max 4.2 m: ID 80 A • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI04N03LA, IPP04N03LA PG-TO262-3 PG-TO220-3 IPI04N03LA 04N03LA to220 pcb footprint to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3 PDF

    04N03LA

    Abstract: IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING
    Text: 04N03LA 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4181 04N03LA 04N03LA IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING PDF

    IPP04N03LB

    Abstract: JESD22
    Text: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP04N03LB PG-TO220-3-1 04N03LB JESD22 PDF

    DS24A

    Abstract: 04N03D PJ04N03d
    Text: 04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers


    Original     		PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 2009-REV DS24A 04N03D PJ04N03d PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 3.8 m: ID 80 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP04N03LB PG-TO220-3 04N03LB PDF

    IPP04N03LB

    Abstract: JESD22 04N03LB
    Text: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP04N03LB PG-TO220-3-1 04N03LB JESD22 04N03LB PDF