2N7002K
Abstract: No abstract text available
Text: SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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2N7002K
18-Jul-08
2N7002K
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2N7002E
Abstract: No abstract text available
Text: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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2N7002E
18-Jul-08
2N7002E
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2N7002EW
Abstract: No abstract text available
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage
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2N7002E
O-236
OT-23)
2N7002E
18-Jul-08
2N7002EW
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model 2N7002K www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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2N7002K
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2N7002E-T1-E3
Abstract: 2N7002E-T1-GE3 2N7002E marking 2N7002E-T1-E3
Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 3 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF
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2N7002E
O-236
OT-23)
2N7002E-T1-E3
18-Jul-08
2N7002E-T1-E3
2N7002E-T1-GE3
2N7002E
marking 2N7002E-T1-E3
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marking 2N7002E-T1-E3
Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3 • • • • Low Threshold: 2 V (typ.)
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2N7002E
2002/95/EC
O-236
OT-23)
18-Jul-08
marking 2N7002E-T1-E3
sot 23 marking code 7e
2N7002E siliconix
2N7002E-T1-E3
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Untitled
Abstract: No abstract text available
Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002VC/VAC
AEC-Q101
OT563
J-STD-020
MIL-STD-202,
DS30639
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diodes code va
Abstract: VA MARKING
Text: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage
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2N7002VC/VAC
2N7002V/VA
AEC-Q101
OT-563
OT-563
J-STD-020D
DS30448
diodes code va
VA MARKING
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2N7002K
Abstract: No abstract text available
Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Low On-Resistance: 2 Ω Pb-free • Low Threshold: 2 V (typ.) Available • Low Input Capacitance: 25 pF RoHS* • Fast Switching Speed: 25 ns
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2N7002K
O-236
OT-23
18-Jul-08
2N7002K
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Untitled
Abstract: No abstract text available
Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF
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2N7002K
O-236
OT-23
2N7002K-T1
2N7002K-T1-E3
2N7002K-T1-GE3
18-Jul-08
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2N7002E
Abstract: 2N7002E-7-F
Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"
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2N7002E
OT-23
J-STD-020
MIL-STD-202,
DS30376
2N7002E
2N7002E-7-F
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2N7002E-T1-E3
Abstract: marking code 7e marking 7E SOT-23 Diode 2N7002E 2N7002E-T1-GE3 "MARKING CODE" "7E"
Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3 • • • • Low Threshold: 2 V (typ.)
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2N7002E
2002/95/EC
O-236
OT-23)
2N7002E-T1-E3
2N7002E-T1-GE3
11-Mar-11
2N7002E-T1-E3
marking code 7e
marking 7E SOT-23 Diode
2N7002E
2N7002E-T1-GE3
"MARKING CODE" "7E"
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2N7002KQ-7
Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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2N7002K
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
OT-23
DS30896
2N7002KQ-7
k7k sot-23
sot-23 Marking k7k
2N7002K-7
2N7002K-2
2N7002K K7K
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k72 transistor
Abstract: k72 transistor surface mount 2N7002DW 2N7002DW-7-F
Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002DW
AEC-Q101
OT-363
J-STD-020
MIL-STD-202,
DS30120
k72 transistor
k72 transistor surface mount
2N7002DW
2N7002DW-7-F
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2N7002KQ-13
Abstract: 2N7002KQ-7
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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2N7002K
AEC-Q101
J-STD-020
MIL-STD-202,
DS30896
2N7002KQ-13
2N7002KQ-7
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Untitled
Abstract: No abstract text available
Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package
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2N7002A
AEC-Q101
OT-23
OT-23
J-STD-020D
MIL-STD-202,
DS31360
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2N7002K-T1-E3
Abstract: 2N7002K-T1-GE3 2N7002K-T1 2N7002K-T1 Vishay 2n7002k 7k 2N7002K
Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)
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2N7002K
O-236
OT-23
2002/95/EC
2N7002K-T1
2N7002K-T1-E3lectual
18-Jul-08
2N7002K-T1-E3
2N7002K-T1-GE3
2N7002K-T1
2N7002K-T1 Vishay
2n7002k 7k
2N7002K
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DS30120 Rev. 13
Abstract: No abstract text available
Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002DW
AEC-Q101
OT363
J-STD-020
MIL-STD-202,
DS30120
DS30120 Rev. 13
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sot-23 Marking k7k
Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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2N7002K
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
DS30896
sot-23 Marking k7k
2N7002K
k7k sot-23
2N7002K-7
2N7002K K7K
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Untitled
Abstract: No abstract text available
Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002VC/VAC
AEC-Q101
OT563
J-STD-020
DS30639
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Untitled
Abstract: No abstract text available
Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features Mechanical Data • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package
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2N7002VC/VAC
AEC-Q101
OT563
J-STD-020
DS30639
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k72 diode
Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage
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2N7002DW
AEC-Q101
DS30120
k72 diode
mosfet k72
K72 marking diode
DS30120 Rev. 14
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k72 transistor sot 23
Abstract: No abstract text available
Text: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 2
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2N7002
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
DS11303
k72 transistor sot 23
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Untitled
Abstract: No abstract text available
Text: 2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) ID TA = 25°C 60V 7.5Ω @ VGS = 5V 115mA • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002T
115mA
AEC-Q101
DS30301
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