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    k7b transistor

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·


    Original
    PDF 2N7002E OT-23 OT-23, J-STD-020A MIL-STD-202, 200mA 250mA DS30376 k7b transistor

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    PDF 2N7002E 300mA AEC-Q101 DS30376

    2N7002E

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Mechanical Data • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original
    PDF 2N7002E OT-23 OT-23 J-STD-020C MIL-STD-202, DS30376 2N7002E

    2N7002E

    Abstract: 2N7002E-7 2N7002E-7-F
    Text: SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78


    Original
    PDF 2N7002E OT-23 MIL-STD-202, 200mA 250mA DS30376 2N7002E 2N7002E-7 2N7002E-7-F

    2N7002E

    Abstract: 2N7002E-7-F J-STD-020D "igss 10 na"
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Mechanical Data • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance


    Original
    PDF 2N7002E OT-23 J-STD-020D MIL-STD-202, DS30376 2N7002E 2N7002E-7-F J-STD-020D "igss 10 na"

    2N7002E

    Abstract: 2N7002E-7-F
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original
    PDF 2N7002E OT-23 J-STD-020 MIL-STD-202, DS30376 2N7002E 2N7002E-7-F

    k7b transistor

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·


    Original
    PDF 2N7002E OT-23 OT-23, J-STD-020A MIL-STD-202, 200mA 250mA DS30376 k7b transistor

    2N7002E

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    PDF 2N7002E 300mA AEC-Q101 DS30376 2N7002E

    2N7002E

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    PDF 2N7002E 300mA AEC-Q101 DS30376 2N7002E

    ne 037

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002E NEW PRODUCT Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version


    Original
    PDF 2N7002E OT-23 OT-23, J-STD-020A MIL-STD-202, 200mA 250mA DS30376 ne 037

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002E NEW PRODUCT Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data


    Original
    PDF 2N7002E OT-23 OT-23, J-STD-020A MIL-STD-202, 200mA 250mA DS30376

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 60V 3Ω @ VGS = 10V 300mA  Low Input Capacitance  Fast Switching Speed Description


    Original
    PDF 2N7002E 300mA AEC-Q101 DS30376

    2N7002E

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    PDF 2N7002E 300mA AEC-Q101 DS30376 2N7002E

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Mechanical Data • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance


    Original
    PDF 2N7002E OT-23 J-STD-020C MIL-STD-202, DS30376

    2N7002E

    Abstract: 2N7002E-7-F marking code ne sot 23
    Text: SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78


    Original
    PDF 2N7002E OT-23 MIL-STD-202, DS30376 2N7002E 2N7002E-7-F marking code ne sot 23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 60V 3Ω @ VGS = 10V 300mA  Low Input Capacitance  Fast Switching Speed Description


    Original
    PDF 2N7002E 300mA AEC-Q101 DS30376