512MB NOR FLASH
Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2
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S72WS-N
16-bit
512MB NOR FLASH
BTA160
BGA 130 MCP NAND DDR
S72WS512NFFKFWZ2
Flash MCp nand DRAM 137-ball
ball 128 mcp
NAND FLASH BGA
S29WS256N
S72WS256ND0
S72WS256NDE
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512MB NOR FLASH
Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on
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S72WS-N
16-bit
200rranty
512MB NOR FLASH
BFW transistors
Diode Mark N10
MCP NOR FLASH SDRAM
137-Ball
66 ball nor flash
JESD 95-1, SPP-010
NAND FLASH BGA
S72WS256NDE
S72WS256NEE
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Flash MCp nand DRAM 137-ball
Abstract: DA12A marking PP nand sdram mcp
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
Flash MCp nand DRAM 137-ball
DA12A
marking PP
nand sdram mcp
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DA12A
Abstract: No abstract text available
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
DA12A
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Untitled
Abstract: No abstract text available
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 3-PIN MICROPROCESSOR RESET CIRCUITS AZ809/AZ810 General Description Features The AZ809/810 microprocessor supervisory circuits can be used to monitor the power supplies in microprocessor and digital systems. They provide a reset to the
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AZ809/AZ810
AZ809/810
240ms
AZ809
AZ810
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S71NS064NA0
Abstract: A-DQ15 NS064N S29NS-N S71NS-N
Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)
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S71NS-N
16-bit)
S71NS064NA0
A-DQ15
NS064N
S29NS-N
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AZ810NLTR
Abstract: marking n2c sot AZ809NLTR markingn2csot
Text: Preliminary Datasheet 3-PIN MICROPROCESSOR RESET CIRCUITS AZ809/AZ810 General Description Features The AZ809/810 microprocessor supervisory circuits can be used to monitor the power supplies in microprocessor and digital systems. They provide a reset to the
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AZ809/810
240ms
AZ809
AZ810
AZ810NLTR
marking n2c sot
AZ809NLTR
markingn2csot
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TRIAC zo 607 MA
Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’
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DL137/D
May-2000
r14525
TRIAC zo 607 MA
ZO 607 TRIAC
Westinghouse SCR handbook
tl-130 transformer
BRX49 equivalent
800w class d circuit diagram schematics
triac MAC 97 AB
triac MAC 97 A6
ZO 103 TRIAC
1N5760
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triac with snubber
Abstract: RF transistor W2W TRIAC RCA Westinghouse SCR handbook BATTERY CHARGER SCR ZO 607 TRIAC 11Z13 TRIAC zo 607 MA AC 220v fan motor speed control triac bt136 220v dimmer light bt139
Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’
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DL137/D
May-2000
r14525
DL137/D
triac with snubber
RF transistor W2W
TRIAC RCA
Westinghouse SCR handbook
BATTERY CHARGER SCR
ZO 607 TRIAC
11Z13
TRIAC zo 607 MA
AC 220v fan motor speed control triac bt136
220v dimmer light bt139
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VFBGA 112-ball Pb free
Abstract: s29ns-n_00 S29NS-N S30MS-P S75NS128NBF S75NS128NBG S75NS-N MMB112-11
Text: S75NS-N S29NS-N: MirrorBit 1.8 Volt-only Simultaneous Read/ Write, Burst-mode Multiplexed Flash NOR Interface S30MS-P: ORNAND™ Flash (NAND interface) Multiplexed Synchronous pSRAM S75NS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S75NS-N
S29NS-N:
S30MS-P:
S75NS-N
VFBGA 112-ball Pb free
s29ns-n_00
S29NS-N
S30MS-P
S75NS128NBF
S75NS128NBG
MMB112-11
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ADQ15
Abstract: S71NS256P S71NS128P JEP95
Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burstmode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit) and 16 Mb (1 Mb x 16-bit)
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S71NS-N
16-bit)
NS064N
NS128N
NS256N
ADQ15
S71NS256P
S71NS128P
JEP95
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Untitled
Abstract: No abstract text available
Text: S71NS-P Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode Multiplexed pSRAM 256 Mb 16 Mb x 16-bit and 128 Mb (8 Mb x 16-bit) Flash 64 Mb (4 Mb x 16-bit), and 32 Mb (2 Mb x 16-bit) pSRAM
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S71NS-P
16-bit)
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smd jsp
Abstract: jpP marking code jsp marking BAS19 BAS20 BAS21 BAS21 on JPp smd marking code SOT23
Text: Philips Semiconductors Product specification General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns BAS19; BAS20; BAS21 MARKING PINNING MARKING CODE TYPE NUMBER PIN DESCRIPTION 1 anode • General application BAS19 JPp
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BAS19;
BAS20;
BAS21
BAS19,
BAS20,
BAS21
BAS20
711062b
smd jsp
jpP marking code
jsp marking
BAS19
BAS21 on
JPp smd marking code SOT23
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2SC5086
Abstract: HN2C10FT C2PP
Text: TOSHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES Q1/Q2
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HN2C10FT
2SC5086
500MHz
2SC5086
HN2C10FT
C2PP
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6
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HN2C10FT
2SC5086
500MHz
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HN2C11FU
Abstract: No abstract text available
Text: TO SH IBA H N2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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HN2C11
N2C11FU
HN2C11FU
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1
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HN2C10FT
2SC5086
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BAT18
Abstract: IEC134 marking code FV D0EM33S
Text: • bhSB'îBl D0E4335 SHE « A P X N AMER PHILIPS/DISCRETE BAT18 b7E D SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. QUICK REFERENCE DATA Continuous reverse voltage Forward current d.c.
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D0EM33S
BAT18
OT-23.
BAT18
7Z67460
IEC134
marking code FV
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S13 SMD
Abstract: Diode smd code 30a BBY42 9i21 code S13 smd code marking TV sot23
Text: • ^53=131 00241*33 bSO H A P X N APIER P H I L I P S / D I S C R E T E BBY42 b?E D y v V.H.F. VARIABLE CAPACITANCE DIODE The BBY42 is a variable capacitance diode in a microminiature plastic envelope SOT-23. It is intended fo r use in v.h.f. TV tuners and C ATV applications using SMD technology.
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BBY42
BBY42
OT-23.
S13 SMD
Diode smd code 30a
9i21
code S13
smd code marking TV sot23
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JH MARKING CODE SCHOTTKY DIODE
Abstract: DIODE B44 sot sot-23 marking 7z MARKING CODE L4P l4p diode marking B44 MARKING 12p SOT-23 ,MARKING 12p SOT-23 12p sot-23 bat54j
Text: ?110flab 0 0 b ö 3 0 S ô71 • P H I N BAT54 SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode w ith an integrated p-n junction protection ring in a micro miniature SO T-23 envelope intended fo r surface mounting. The diode features especially a low forward voltage.
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7110flab
BAT54
OT-23
OT-23
711065b
00bfl3D7
7Z95211
JH MARKING CODE SCHOTTKY DIODE
DIODE B44 sot
sot-23 marking 7z
MARKING CODE L4P
l4p diode
marking B44
MARKING 12p SOT-23
,MARKING 12p SOT-23
12p sot-23
bat54j
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N2A-2
Abstract: RF1X D3/HS 2303
Text: SIEMENS ICs for Communications Dual 2GigaPLL PMB 2303 V1.0 Target Specification 4.95 fl23SbOS GG7fll07 314 PMB 2303 Revision History Previous Releases: Page 4.95 ♦ none Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible
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fl23SbOS
GG7fll07
P-TSSOP-20-1
fl235bOS
N2A-2
RF1X
D3/HS 2303
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SN7404
Abstract: 1 microfarad tantalum capacitor
Text: TDC1012 TDC1016 Video Speed D/A Converter DA 10-Bit, 20 Msps Description Features The TDC1016 is a bipolar monolithic digital-to-analog converter which can convert digital data into an analog voltage at rates up to 20 Msps Megasamples Per Second . The device includes an input data register and
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TDC1012
TDC1016
10-bit
2N2907
SN7404
1 microfarad tantalum capacitor
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R w w w .fairchildsem i.com tm TDC1 01 6 Video Speed D/A Converter 1 0 - B i t , 20 Msps Features Description • • • • • • • • The TDC1016 is a bipolar monolithic digital-to-analog converter which can convert digital data into an analog volt
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TDC1016
10-bit
DS90001016
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