Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =-1.2A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: LH8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION
|
Original
|
PDF
|
LH8550PLT1G
LH8550
3000/Tape
LH8550PLT3G
10000/Tape
LH8550QLT1G
LH8550QLT3G
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =-1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: LH8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION
|
Original
|
PDF
|
LH8550PLT1G
LH8550
3000/Tape
LH8550PLT3G
10000/Tape
LH8550QLT1G
LH8550QLT3G
|
KIY transistors
Abstract: LH8550 LH8550QLT1G kiy NPN KIY transistor transistor marking KIY marking KIY 060PIN LH8550PLTIG
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLTIG Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: LH8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION
|
Original
|
PDF
|
LH8550PLTIG
LH8550
LH8550PLT1G
3000/Tape
LH8550PLT3G
10000/Tape
LH8550QLT1G
LH8550QLT3G
KIY transistors
LH8550
LH8550QLT1G
kiy NPN
KIY transistor
transistor marking KIY
marking KIY
060PIN
LH8550PLTIG
|
LH8550QLT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series S-LH8550PLT1G Series FEATURE ƽHigh current capacity in compact package. IC =-1.5A. ƽEpitaxial planar type. ƽPNP complement: LH8550 3 ƽPb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique
|
Original
|
PDF
|
LH8550PLT1G
S-LH8550PLT1G
LH8550
AEC-Q101
3000/Tape
LH8550PLT3G
10000/Tape
LH8550QLT1G
LH8550QLT3G
LH8550QLT1G
|
KIY transistors
Abstract: marking KIY LH8550PLT1G lh8550
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series S-LH8550PLT1G Series FEATURE ƽHigh current capacity in compact package. IC =-1.5A. ƽEpitaxial planar type. ƽPNP complement: LH8550 3 ƽPb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique
|
Original
|
PDF
|
LH8550PLT1G
S-LH8550PLT1G
LH8550
AEC-Q101
3000/Tape
LH8550PLT3G
10000/Tape
LH8550QLT1G
LH8550QLT3G
KIY transistors
marking KIY
LH8550PLT1G
lh8550
|
Untitled
Abstract: No abstract text available
Text: >kiyjxiyvi 19-0411; Rev 2; 2/98 4 - Pi n f j P V o l t a g e M o n i t o r s with Manual Reset Input _ F e a t u r e s The M AX811/M AX812 are low -pow er m icroprocessor fiP supervisory circuits used to m onitor pow er s u p
|
OCR Scan
|
PDF
|
140ms
MAX811)
MAX812)
OT143
AX811/M
AX812
ext071
LDT-143.
l-005£
|
Untitled
Abstract: No abstract text available
Text: >kiyixi>ki 19-1090; Rev 1; 1/99 6 8 H C 1 1/B id irectio n al-C o m p atib le fiP R eset Circuit Features The MAX6314 low -pow er CMOS m icroprocessor ^P s u p e rv is o ry c ir c u it is d e s ig n e d to m o n ito r p o w e r s u p p lie s in ^iP and d ig ita l system s. The M A X6314’s
|
OCR Scan
|
PDF
|
MAX6314
X6314â
68HC11.
OT143
|
marking AE 5pin
Abstract: MAX4124EUK MAX4126
Text: >kiyjxiyvi 19-1087; Rev 1 ;8 /9 7 S i n g l e/ D u a l / Q u a d , Wide - B a n d w i d t h , L o w - P o w e r , S i n g l e - S u p p l y R a i l - t o - Ra i l I/O Op A m p s _F e a t u r e s The MAX4122-MAX4129 family of operational amplifiers
|
OCR Scan
|
PDF
|
MAX4122/4)
MAX4122/3/6/7/9)
25MHz
MAX4124/5/8)
650iiA
MAX4123/5/7)
200iiV
500pF
marking AE 5pin
MAX4124EUK
MAX4126
|
500 watt power supply circuit diagram 20kHz
Abstract: Marking DA SOT23-5 X8864
Text: >kiyixi>ki 19-0466; Rev 2 ; 11/98 Low -Dropout, 120mA Linear Regulators _ G e n e r a l D e s c r i p t i o n The devices feature Dual Mode operation: their out put voltage is preset at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions or can be
|
OCR Scan
|
PDF
|
120mA
MAX8863T/S/R
MAX8864T/S/R
120mA.
500 watt power supply circuit diagram 20kHz
Marking DA SOT23-5
X8864
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1O M o u t lin e U nit : mm Package : FTO-220G 100V 20A Feature • Tj=175°C • • • • • <SIr =30|j A Tj=175°C Full Molded Low Ir =30|jA Resistance for thermal run-away Main Use • y -h P C .L C D Ç -^ i
|
OCR Scan
|
PDF
|
FTO-220G
Tc-10
50IIz
J533-1)
|
JIS B 7512
Abstract: NOP998 taiyo yuden date code Taiyo 93-R information Taiyo 93 T
Text: 06/18/98 10:17 FAI 847 925 08flfl TAIYO YÜDEN CHICAGO @002 PRIORITY No. T9 5 7 F 2 1 SPECIFICATION HIGH-FREQUENCY CHIP INDUCTOR MULTI-LAYER IIK2125 TYPE SERIES TAIYO YUDEN CO. LTD. DATE: 27. Aug. 1997 I TAIYS00004 06/18/98 10 :17 FAX 847 925 0899 TAIYO YUDEN CHICAGO
|
OCR Scan
|
PDF
|
08flf
IIK2125
TAIYS00004
JIS B 7512
NOP998
taiyo yuden date code
Taiyo 93-R information
Taiyo 93 T
|
A1681
Abstract: 2SA1681 2SC4409
Text: TOSHIBA 2SA1681 2 S A 1 681 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V q ^ (sat)“ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tstg = 300ns(Typ.)
|
OCR Scan
|
PDF
|
2SA1681
300ns
2SC4409
A1681
2SA1681
2SC4409
|
2SA1202
Abstract: 2SC2882
Text: TOSHIBA 2SC2882 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2882 Unit in mm POWER AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS 1.6 MAX. 4.6 MAX. 1.7MAX. • Suitable for Driver of 30~35 Watts Audio Amplifier • Pq = 1~2W (Mounted Ceramic Substrate)
|
OCR Scan
|
PDF
|
2SC2882
2SA1202
250mm2
-55truments,
2SC2882
|
2SA1734
Abstract: 2SC4539 A1734
Text: 2SA1734 TOSHIBA 2 S A 1 734 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V q ^ (sat)“ —0.5V (Max.) (IC= _700mA) High Speed Switching Time: ^ ^ = 0 .2 /^ (Typ.)
|
OCR Scan
|
PDF
|
2SA1734
700mA)
2SC4539
2SA1734
2SC4539
A1734
|
|
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)
|
OCR Scan
|
PDF
|
2SC4539
700mA)
2SA1734
|
2SA1213
Abstract: 2SC2873
Text: TO SH IBA 2SC2873 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2873 Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. —J- * 4.6MAX. 1.7MAX. Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (Ic = lA)
|
OCR Scan
|
PDF
|
2SC2873
2SA1213
2SA1213
2SC2873
|
2SA1314
Abstract: A1314 J-21
Text: 2SA1314 TO SH IBA 2 S A 1 314 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO PO W ER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. 0.4 +0.05 High DC Current Gain and Excellent Linearity • V i t /-•X = 1 A O - R O O ( \ T n - n = _ 1 V
|
OCR Scan
|
PDF
|
2SA1314
2SA1314
A1314
J-21
|
2SA1213
Abstract: 2SC2873
Text: 2SA1213 TO SH IBA 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • • • • • : V c e (sat)~ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tgtg^l.O/^siTyp.)
|
OCR Scan
|
PDF
|
2SA1213
2SC2873
2SA1213
|
CD95F
Abstract: No abstract text available
Text: E US1A- US1M TAIWAN SEMICONDUCTOR RoHS 1.0 Amps. Surface M ount High Efficient Rectifiers 5MA/DO-214AC C O M P L IA N C E nwii.xi: Li TÜ7E5T5Í I.mrcay. Features <> •£• •> ■fr <> •> .■Kiyi.u: ' .■uiyi.ir.-_ ' G lass passivated j unction ch ip
|
OCR Scan
|
PDF
|
5MA/DO-214AC
CD95F
|
2SK3129
Abstract: K312 SC-65
Text: TO SH IBA 2SK3129 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 29 CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 5.5 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 70S (Typ.)
|
OCR Scan
|
PDF
|
2SK3129
2SK3129
K312
SC-65
|
TPC8003
Abstract: No abstract text available
Text: TO SH IBA TPC8003 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSÏÏ TPC8003 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS Q n n n lifl/1 M U ^ r ^ /n v v i in xxx v v x x x ^ /u v v o n r l TViiv»
|
OCR Scan
|
PDF
|
TPC8003
TPC8003
|
2SA1384
Abstract: 2SC3515 A1384
Text: TO SH IBA 2SA1384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 384 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS High Voltage : VCBO = - 300V, VCEO - - 300V
|
OCR Scan
|
PDF
|
2SA1384
2SC3515
2SA1384
A1384
|
2sj511
Abstract: No abstract text available
Text: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX. -*J-*
|
OCR Scan
|
PDF
|
2SJ511
2sj511
|
pico fuse color code
Abstract: picofuse 5000 2750500000 2751250000 Marking code WMP 275110C pico fuse marking WMP 2751250005 PICOFUSE 275
Text: REV. c o m m u n ica tio n s PART SPECIFICATION SHEET Security & Detection Systems O R IG IN A T O R : T o d d H e in o d e s c r ip tio n : 5A PCB Mount Axial Pico Fuse f | u | S | e | , | I 3 I 1 I 2 Il - l . . ! ! o | P 1I | C | 0 | •| I 5 Ia| | a | x | i | a | l |
|
OCR Scan
|
PDF
|
49-23D2-6
pico fuse color code
picofuse 5000
2750500000
2751250000
Marking code WMP
275110C
pico fuse
marking WMP
2751250005
PICOFUSE 275
|
