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    MARKING F INFINEON Search Results

    MARKING F INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING F INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996

    BFR94

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996 BFR94

    BFR949T

    Abstract: SC75 GMA marking
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996 Oct-24-2001 BFR949T SC75 GMA marking

    Untitled

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R BFP181R

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R Jun-21-2001 BFP181R

    Untitled

    Abstract: No abstract text available
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B


    Original     		PDF BCR162. BCR162/F/L3 BCR162T EHA07183 BCR162 BCR162F BCR162L3 dissipationBCR162,

    Untitled

    Abstract: No abstract text available
    Text: BFP 181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R


    Original     		PDF OT-143R Oct-12-1999

    GMA marking

    Abstract: IC 2272
    Text: BFP 182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R


    Original     		PDF OT-143R 900MHz Oct-12-1999 GMA marking IC 2272

    SPICE 2G6

    Abstract: No abstract text available
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original     		PDF BFP183R OT143R SPICE 2G6

    transistor marking code wts

    Abstract: transistor marking code wts 15
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		PDF BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts transistor marking code wts 15

    G1026

    Abstract: No abstract text available
    Text: BFR193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR193W VSO05561 OT323 G1026

    Untitled

    Abstract: No abstract text available
    Text: BFR193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR193W VSO05561 OT323

    BFR193W

    Abstract: VSO05561
    Text: BFR193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR193W VSO05561 OT323 900MHz Aug-09-2001 BFR193W VSO05561

    BFP182R

    Abstract: TRANSISTOR BI 187
    Text: BFP182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs


    Original     		PDF BFP182R OT143R 900MHz Aug-09-2001 BFP182R TRANSISTOR BI 187

    BFP183R

    Abstract: transistor marking RHs
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original     		PDF BFP183R OT143R 900MHz Aug-09-2001 BFP183R transistor marking RHs

    DIN 6784

    Abstract: BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B


    Original     		PDF BCR162. BCR162/F/L3 BCR162T EHA07183 BCR162 BCR162F BCR162L3 Aug-29-2003 DIN 6784 BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75

    Untitled

    Abstract: No abstract text available
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B


    Original     		PDF BCR162. BCR162/F/L3 BCR162T EHA07183 BCR162 BCR162F BCR162L3 Aug-29-2003

    Untitled

    Abstract: No abstract text available
    Text: BFP182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs


    Original     		PDF BFP182R OT143R

    Untitled

    Abstract: No abstract text available
    Text: BFP182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs


    Original     		PDF BFP182R OT143R

    Transistor BFR 38

    Abstract: No abstract text available
    Text: BFR 193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05161 OT-23 Oct-25-1999 Transistor BFR 38

    1.0037

    Abstract: BFP193 VPS05178
    Text: BFP193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers 4  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193 VPS05178 OT143 temper00MHz Aug-09-2001 1.0037 BFP193 VPS05178

    smd diode 319

    Abstract: No abstract text available
    Text: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273


    OCR Scan     		PDF OT-223 Q67000-S273 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd diode 319

    TRANSISTOR SMD MARKING CODE kd

    Abstract: No abstract text available
    Text: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S306 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T TRANSISTOR SMD MARKING CODE kd