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    BFP193 Price and Stock

    Infineon Technologies AG BFP193WH6327XTSA1

    RF TRANS NPN 12V 8GHZ SOT343-4
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    DigiKey BFP193WH6327XTSA1 Reel 45,000 3,000
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    BFP193WH6327XTSA1 Cut Tape 7,986 1
    • 1 $0.31
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    • 100 $0.1293
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    BFP193WH6327XTSA1 Digi-Reel 1
    • 1 $0.31
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    Avnet Americas BFP193WH6327XTSA1 Reel 6 Weeks 9,000
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    Mouser Electronics BFP193WH6327XTSA1 9,371
    • 1 $0.31
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    Verical BFP193WH6327XTSA1 16,907 123
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    BFP193WH6327XTSA1 9,000 486
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    BFP193WH6327XTSA1 9,000 3,000
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    BFP193WH6327XTSA1 8,696 115
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    Arrow Electronics BFP193WH6327XTSA1 16,907 1
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    BFP193WH6327XTSA1 9,000 6 Weeks 3,000
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    BFP193WH6327XTSA1 Cut Strips 8,696 6 Weeks 1
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    Chip1Stop BFP193WH6327XTSA1 Cut Tape 9,000
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    New Advantage Corporation BFP193WH6327XTSA1 90,000 1
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    Infineon Technologies AG BFP193E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT143-4
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    DigiKey BFP193E6327HTSA1 Cut Tape 4,852 1
    • 1 $0.39
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    BFP193E6327HTSA1 Reel 3,000 3,000
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    BFP193E6327HTSA1 Digi-Reel 1
    • 1 $0.39
    • 10 $0.319
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    Avnet Americas BFP193E6327HTSA1 Reel 4 Weeks 6,000
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    Mouser Electronics BFP193E6327HTSA1 2,537
    • 1 $0.39
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    • 10000 $0.098
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    Verical BFP193E6327HTSA1 180,000 6,000
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    BFP193E6327HTSA1 18,000 3,000
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    BFP193E6327HTSA1 6,000 3,000
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    BFP193E6327HTSA1 5,000 275
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    BFP193E6327HTSA1 699 69
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    Arrow Electronics BFP193E6327HTSA1 18,000 4 Weeks 3,000
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    BFP193E6327HTSA1 6,000 4 Weeks 3,000
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    BFP193E6327HTSA1 Cut Strips 699 4 Weeks 1
    • 1 $0.333
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    Bristol Electronics BFP193E6327HTSA1 325
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    Quest Components BFP193E6327HTSA1 453
    • 1 $1
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    Rochester Electronics BFP193E6327HTSA1 4,760 1
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    Infineon Technologies AG BFP193WE6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP193WE6327HTSA1 Digi-Reel 1
    • 1 $0.45
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    BFP193WE6327HTSA1 Reel 9,000
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    BFP193WE6327HTSA1 Cut Tape 1
    • 1 $0.45
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    Infineon Technologies AG BFP 193 E6327

    RF Bipolar Transistors NPN Silicon RF TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFP 193 E6327 4,648
    • 1 $0.39
    • 10 $0.319
    • 100 $0.217
    • 1000 $0.122
    • 10000 $0.098
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    Bristol Electronics BFP 193 E6327 4,696
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    Infineon Technologies AG BFP 193W H6327

    RF Bipolar Transistors RF BIP TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFP 193W H6327 5,927
    • 1 $0.44
    • 10 $0.325
    • 100 $0.184
    • 1000 $0.094
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    Find more BFP193 price and stock on Findchips.com

    BFP193 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFP193 Infineon Technologies For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers Original PDF
    BFP193 Siemens NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Original PDF
    BFP193 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP193 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFP193E6327 Infineon Technologies TRANS GP BJT NPN 12V 0.08A 4SOT-143 T/R Original PDF
    BFP193E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP193E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP193E6433 Infineon Technologies TRANS GP BJT NPN 12V 0.08A 4SOT-143 T/R Original PDF
    BFP193E6745 Infineon Technologies TRANS GP BJT NPN 12V 0.08A 4SOT-143 T/R Original PDF
    BFP193T Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP193TW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP193W Infineon Technologies For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers Original PDF
    BFP193W Siemens NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Original PDF
    BFP193W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP193WE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-343 Original PDF
    BFP193WE6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-343 Original PDF
    BFP193WH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 80MA SOT343 Original PDF
    BFP193WH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 12V 80MA SOT343 Original PDF

    BFP193 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    w19 transistor

    Abstract: npn transistor w19 marking W19
    Text: BFP193T / BFP193TW / BFP193TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications SOT-343 For low noise and high gain applications such as


    Original     		PDF BFP193T BFP193TW BFP193TRW OT-143 OT-343 OT-143 OT-343 OT-343R w19 transistor npn transistor w19 marking W19

    BFP193

    Abstract: No abstract text available
    Text: BFP193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers 4  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193 VPS05178 OT143 BFP193

    Untitled

    Abstract: No abstract text available
    Text: BFP193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFP193 OT143

    BFP181

    Abstract: BFP193
    Text: BFP193 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP193 OT143 BFP181 BFP193

    npn transistor w19

    Abstract: w19 transistor marking W19 BFP193T BFP193TRW BFP193TW
    Text: BFP193T/BFP193TW/BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.


    Original     		PDF BFP193T/BFP193TW/BFP193TRW BFP193TW BFP193TRW BFP193T D-74025 20-Jan-99 npn transistor w19 w19 transistor marking W19

    npn transistor w19

    Abstract: marking W19 BFP193T BFP193TRW BFP193TW marking 193 w19 transistor
    Text: BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low noise figure High transition frequency fT = 8 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP193T BFP193TW BFP193TRW 2002/95/EC 2002/96/EC OT-143 OT-343 OT-343R BFP193T OT-143 npn transistor w19 marking W19 BFP193TRW marking 193 w19 transistor

    1.0037

    Abstract: BFP193 VPS05178
    Text: BFP193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers 4  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193 VPS05178 OT143 temper00MHz Aug-09-2001 1.0037 BFP193 VPS05178

    Untitled

    Abstract: No abstract text available
    Text: BFP193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193W VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers 4  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193 VPS05178 OT143

    w19 transistor

    Abstract: npn transistor w19 marking W19 marking 193 w1943
    Text: BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low noise figure High transition frequency fT = 8 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP193T BFP193TW BFP193TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R OT-143 w19 transistor npn transistor w19 marking W19 marking 193 w1943

    Untitled

    Abstract: No abstract text available
    Text: BFP193 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFP193 AEC-Q101 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP193W NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFP193W AEC-Q101 OT343

    marking W19

    Abstract: npn transistor w19
    Text: Not for new design, this product will be obsoleted soon BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low noise figure High transition frequency fT = 8 GHz e3 Excellent large signal behaviour


    Original     		PDF BFP193T BFP193TW BFP193TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R OT-143 marking W19 npn transistor w19

    w19 transistor

    Abstract: npn transistor w19
    Text: BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.


    Original     		PDF BFP193T/BFP193TW/BFP193TRW BFP193TW BFP193TRW BFP193T D-74025 20-Jan-99 w19 transistor npn transistor w19

    BFP181

    Abstract: BFP193
    Text: BFP193 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP193 OT143 BFP181 BFP193

    Untitled

    Abstract: No abstract text available
    Text: BFP193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193W VPS05605 OT343

    npn transistor w19

    Abstract: BFP193TW w19 transistor silicon npn planar rf transistor sot 143 marking W19 85015 sot-143 vishay telefunken BFP193T BFP193TRW
    Text: BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.


    Original     		PDF BFP193T/BFP193TW/BFP193TRW BFP193TW BFP193TRW BFP193T D-74025 20-Jan-99 npn transistor w19 w19 transistor silicon npn planar rf transistor sot 143 marking W19 85015 sot-143 vishay telefunken

    BFP193W

    Abstract: No abstract text available
    Text: BFP193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193W VPS05605 OT343 te900MHz Aug-09-2001 BFP193W

    BFP193W

    Abstract: BGA420
    Text: BFP193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP193W OT343 BFP193W BGA420

    BFP193W

    Abstract: C 828 BGA420
    Text: BFP193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP193W OT343 BFP193W C 828 BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFP193W OT343

    07027

    Abstract: 1.0037
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP193W Q62702-F1577 OT-343 BFP193W 07027 1.0037

    transistor marking zg

    Abstract: marking z0 sot -6
    Text: Y BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband ampli­


    OCR Scan     		PDF BFP193T/BFP193TW/BFP193TRW BFP193TW BFP193TRW BFP193T 20-Jan-99 D-74025 transistor marking zg marking z0 sot -6

    npn transistor w19

    Abstract: w19 transistor
    Text: wmmt BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband ampli­


    OCR Scan     		PDF BFP193T/BFP193TW/BFP193TRW BFP193TW BFP193TRW BFP193T BFP13TRW 20-Jan-99 BFP13T npn transistor w19 w19 transistor