STS 75 SOT23
Abstract: marking BSs sot23 E6327 Q62702-S612 STS SOT
Text: BSS 139 SIPMOS Small-Signal Transistor ● VDS 250 V ● ID 0.04 A ● RDS on 100 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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Q62702-S612
E6327:
OT-23
STS 75 SOT23
marking BSs sot23
E6327
STS SOT
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BSS139
Abstract: E6327 Q62702-S612 BSS139 SOT23 diode sot-23 marking AG MARKING CODE br 13 SOT23
Text: BSS139 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS on ,max 30 Ω I DSS,min 0.03 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS139 SOT-23 Q62702-S612
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BSS139
OT-23
Q62702-S612
E6327:
BSS139
E6327
Q62702-S612
BSS139 SOT23
diode sot-23 marking AG
MARKING CODE br 13 SOT23
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e7941
Abstract: Q67000-S221 E6327 Q62702-S612
Text: BSS 139 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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Q62702-S612
E6327:
OT-23
Q67000-S221
E7941:
e7941
E6327
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E6327
Abstract: E7941 Q62702-S612 Q67000-S221 STS SOT
Text: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 139 VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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Q62702-S612
E6327:
OT-23
Q67000-S221
E7941:
E6327
E7941
STS SOT
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Vishay DaTE CODE 1206-8
Abstract: No abstract text available
Text: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability
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Si5904DC
S-61855--Rev.
04-Oct-99
Vishay DaTE CODE 1206-8
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Si5904DC
Abstract: No abstract text available
Text: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability
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Si5904DC
S-61855--Rev.
04-Oct-99
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T60405-S6123-X316
Abstract: 6123-X316
Text: DATENBLATT / Specification Sach Nr.: K-Nr.: 25610 K-no.: Kunde: Customer T60405-S6123-X316 Item no.: VAC UUM SCH M ELZE Stromkompensierte Drossel / Common Mode Choke Typenelement / Standard type Datum: 21.06.2012 Date: Kd. Sach Nr.: Seite Customers part no.:
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T60405-S6123-X316
2768-c
3x120Â
Beschrift10
T60405-S6123-X316
6123-X316
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k2564
Abstract: s4 63a
Text: DATENBLATT / Specification Sach Nr.: K-Nr.: K-no.: 25645 Kunde: Stromkompensierte Drossel / Common Mode Choke Typenelement / Standard type Customer T60405-S6123-X363 Item no.: VA CUU M SC HM ELZE Datum: 15.02.2010 Date: Kd. Sach Nr.: Seite Customers part no.:
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T60405-S6123-X363
2768-c
k2564
s4 63a
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Si1407DL
Abstract: Si1407DL-T1 Si1407DL-T1-E3 A.4 SOT363
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
S-61009
12-Jun-06
A.4 SOT363
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Untitled
Abstract: No abstract text available
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
08-Apr-05
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Si1303DL
Abstract: No abstract text available
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free
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Si1303DL
OT-323
SC-70
Si1303DL-T1
Si1303DL-T1-E3
18-Jul-08
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Si1303DL
Abstract: No abstract text available
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free
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Si1303DL
OT-323
SC-70
Si1303DL-T1
Si1303DL-T1-E3
08-Apr-05
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Si1407DL
Abstract: Si1407DL-T1 Si1407DL-T1-E3
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
18-Jul-08
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Si1050X
Abstract: SC-89 61-287
Text: Si1050X Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 • TrenchFET Power MOSFET • 100 % Rg Tested
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Si1050X
SC-89
Si1050X-T1-E3
08-Apr-05
SC-89
61-287
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Si1056X
Abstract: SC-89
Text: Si1056X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS
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Si1056X
SC-89
Si1056X-T1-E3
08-Apr-05
SC-89
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SC-89
Abstract: SI1070X
Text: Si1070X Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.099 at VGS = 4.5 V 1.2a 0.140 at VGS = 2.5 V 1.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 3.5 RoHS APPLICATIONS
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Si1070X
SC-89
Si1070X-T1-E3
08-Apr-05
SC-89
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Si1058X
Abstract: SC-89
Text: Si1058X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.091 at VGS = 4.5 V 1.3a 0.124 at VGS = 2.5 V 1.1 Qg (Typ) 3.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS APPLICATIONS
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Si1058X
SC-89
Si1058X-T1-E3
08-Apr-05
SC-89
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Untitled
Abstract: No abstract text available
Text: BSS89 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level * W = ° - 8- 2 0 V Type Vbs t flDS on) Package Marking BSS89 240 V 0.3 A en TO-92 SS89 Typ* BSS89 BSS89 BSS89 Ordering Code Q62702-S519 Q62702-S619
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BSS89
Q62702-S519
Q62702-S619
Q62702-S385
E6288
E6296
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SS89 transistor
Abstract: BSS89 s 89
Text: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.3 A B S S 89 240 V Type B S S 89 B S S 89 B SS 89 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 ffDS(on) 6Q Package Marking
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Q62702-S519
Q62702-S619
Q62702-S385
E6288
E6296
E6325
BSS89
SS89 transistor
BSS89
s 89
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tr 30 f 124
Abstract: SS124
Text: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 5 - 2-5 v Pin 1 Pin 2 Type BSS 124 VDS 400 V b 0.12 A Type BSS 124 BSS 124 Ordering Code Q62702-S614 Q67000-S172 flDS(on) 28 Q Pin 3 D G Package Marking TO-92
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Q62702-S614
Q67000-S172
E6288
tr 30 f 124
SS124
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Q62702-S615
Abstract: ss296 BSS296 Q62702S615
Text: SIEMENS BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 296 VDS 100 V Type BSS 296 BSS 296 Ordering Code Q62702-S615 Q67000-S217 b 0.8 A ffDS(on) 0.8 Q Pin 3 D Package
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Q62702-S615
Q67000-S217
E6296
ss296
BSS296
Q62702S615
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ss 297 transistor
Abstract: Q62702-S616 sm 559 b* siemens bss 297 transistor transistor bss transistor Siemens sS 92
Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type ¡D 0.48 A BSS 297 VDS 200 V Type BSS 297 BSS 297 BSS 297 Ordering Code Q62702-S616 Q67000-S118 Q67000-S292 ^DS(on)
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Q62702-S616
Q67000-S118
Q67000-S292
E6288
E6325
ss 297 transistor
sm 559 b* siemens
bss 297 transistor
transistor bss
transistor Siemens sS 92
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S619F1
Abstract: 859619 marking code NZ 85961 32UNC 859619F-1
Text: BUSHING FINISHi LEAD FINISH: CAPACITANCE TEMP, RANGE .187 HEX. [4.75] CURRENT CONICAL BOTH ENDS MAX. POTTING RISE 0.060 MAX. [1.52] .462+0.031 S ILVE R lOOOpF +200% -25*C TD +85*C 15 AMP MAX, WDRKING VEILTAGE DC RESISTANCE 0.062 [1.585] S ILVE R 85*C 100 VDC
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25MHz
100MHz
500MHz
S619F1
859619F-1
200/BAG
859619
marking code NZ
85961
32UNC
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Surface Mount Device A006
Abstract: S281A HSMS-280A
Text: WhoI HEWLETT 1"KM PACKARD Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • S u rfa ce M ou n t SO T-323 P ack age Package Lead Code Identification (Top View) • Low Turn-O n V oltage
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OT-323
SC-70)
HSMS-280A
HSMS-281A
HSMS-282A
T-323
OT-323
5965-4705E
Surface Mount Device A006
S281A
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