Si1407DL
Abstract: No abstract text available
Text: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1407DL
18-Jul-08
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4946
Abstract: 4946 mosfet AN609 Si1407DL
Text: Si1407DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1407DL
AN609
12-Mar-07
4946
4946 mosfet
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Untitled
Abstract: No abstract text available
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
08-Apr-05
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Si1407DL
Abstract: Si1407DL-T1 Si1407DL-T1-E3 A.4 SOT363
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
S-61009
12-Jun-06
A.4 SOT363
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Si1407DL
Abstract: Si1407DL-T1 Si1407DL-T1-E3
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
18-Jul-08
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Si1407DL
Abstract: No abstract text available
Text: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code
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Si1407DL
OT-363
SC-70
S-01561--Rev.
17-Jul-00
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Untitled
Abstract: No abstract text available
Text: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V "1.8 0.170 @ VGS = –2.5 V "1.5 0.225 @ VGS = –1.8 V "1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code
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Si1407DL
OT-363
SC-70
S-99228--Rev.
08-Nov-99
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Untitled
Abstract: No abstract text available
Text: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code
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Si1407DL
OT-363
SC-70
s-00118--Rev.
07-Feb-00
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Untitled
Abstract: No abstract text available
Text: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code
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Si1407DL
OT-363
SC-70
08-Apr-05
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Si1407DL
Abstract: No abstract text available
Text: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1407DL
25-Mar-03
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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