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    MARKING 7W TRANSISTOR Search Results

    MARKING 7W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 7W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode gp 434

    Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2-101 diode gp 434 RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434

    RD07MVS1

    Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101

    MAR 527 transistor

    Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B-101, MAR 527 transistor RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor

    rd07mvs1b101

    Abstract: 3M Touch Systems D07MVS1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) rd07mvs1b101 3M Touch Systems D07MVS1

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES


    Original     		PDF RD07MVS1 175MHz 520MHz 520MHz 520MHz) 175MHz)

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1 RD07MVS1B 520MHz

    BC857W-B

    Abstract: BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-C BC858W BC858W-A
    Text: SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B M M FEATURES ・For Complementary With NPN Type BC846W/847W/848W. D J 3 1 G A 2 BC857W UNIT -80 VCBO N -50 BC858W -30 BC856W


    Original     		PDF BC856W/7W/8W BC857W BC858W BC856W BC846W/847W/848W. VC-10 BC857W-B BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-C BC858W BC858W-A

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems

    BC846W

    Abstract: BC846W-A BC846W-B BC847W BC848W
    Text: SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B M M FEATURES D A J 2 High Voltage : BC846W VCEO=65V. 3 1 G For Complementary With PNP Type BC856W/857W/858W. DIM A B C MILLIMETERS


    Original     		PDF BC846W/7W/8W BC846W BC856W/857W/858W. BC846W BC847W BC848W BC846W-A BC846W-B BC847W BC848W

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 520MHz 175MHz) 520MHz)

    RD07M

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 175MHz) 520MHz) Oct2011 RD07M

    3M Touch Systems

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) 3M Touch Systems

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    RD07MVS2

    Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		PDF RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS2 RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434

    RD07MVS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) Oct2011

    transistor marking 1f

    Abstract: BC846W BC846W-A BC846W-B BC847W BC848W
    Text: SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B M M FEATURES ᴌHigh Voltage : BC846W VCEO=65V. SYMBOL G RATING BC846W Collector-Emitter Voltage Emitter-Base Voltage BC847W


    Original     		PDF BC846W/7W/8W BC856W/857W/858W. BC846W BC846W BC847W BC848W transistor marking 1f BC846W-A BC846W-B BC847W BC848W

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M FEATURES D G A J 2 ・High Voltage : BC846W VCEO=65V. ・For Complementary With PNP Type BC856W/857W/858W. 3 1 CHARACTERISTIC


    Original     		PDF BC846W/7W/8W BC846W BC856W/857W/858W. BC847W BC848W

    BC856W

    Abstract: BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W BC858W-A
    Text: SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B M M FEATURES ᴌFor Complementary With NPN Type BC846W/847W/848W. D J 3 1 G A 2 MAXIMUM RATING Ta=25ᴱ RATING BC856W Collector-Base Voltage


    Original     		PDF BC856W/7W/8W BC856W BC857W BC858W BC846W/847W/848W. BC-10 BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W BC858W-A

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M FEATURES ・For Complementary With NPN Type BC846W/847W/848W. B M D J G A 2 3 1 P SYMBOL RATING -80 BC856W Collector-Base Voltage


    Original     		PDF BC856W/7W/8W BC846W/847W/848W. BC856W BC857W BC858W

    RD07MVS1-101

    Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems

    BC846AW

    Abstract: BC846BW BC846W BC847AW BC847BW BC847CW BC847W BC848AW BC848W
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC846W/7W/8W EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC846W V Ceo=65V. • For Complementary With PNP Type BC856W/857W/858W.


    OCR Scan     		PDF BC846W/7W/8W BC846W BC856W/857W/858W. BC847W BC848W BC846AW BC846BW BC847AW BC847BW BC847CW BC847W BC848AW BC848W

    BC858W-A

    Abstract: BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W
    Text: SEMICONDUCTOR TECHNICAL DATA BC856W/7W/8W EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846W/847W/848W. DIM A B C D E G H J K L M N MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF BC856W/7W/8W BC846W/847W/848W. BC856W BC857W BC858W BC858W-A BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W

    BC847W-B

    Abstract: BC846W BC846W-A BC846W-B BC847W BC848W
    Text: SEMICONDUCTOR TECHNICAL DATA BC846W/7W/8W EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC846W V Ceo =65V. • For Complementary With PNP Type BC856W/857W/858W. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF BC846W/7W/8W BC846W BC856W/857W/858W. BC847W BC848W BC847W-B BC846W-A BC846W-B BC847W BC848W