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    MARKING 101 PIN5 Search Results

    MARKING 101 PIN5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 101 PIN5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC75-6L

    Abstract: No abstract text available
    Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB800EDK SC-75 SC75-6L-Dual 11-Mar-11 SC75-6L

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB800EDK SC-75 SC75-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB800EDK SC-75 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sia814dj

    Abstract: No abstract text available
    Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free


    Original     		PDF SiA814DJ SC-70 SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free


    Original     		PDF SiA814DJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free


    Original     		PDF SiA814DJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free


    Original     		PDF SiA814DJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74460

    Abstract: No abstract text available
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF SiA811DJ SC-70 SC-70-6 75hay 11-Mar-11 74460

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 11-Mar-11

    BRT12H

    Abstract: BRT11H BRT13H BRT12F-X007T BRT13-H-X017 vde 0844 BRT11-H BRT13H-X017T BRT12H-X009T brt13-h
    Text: BRT11, BRT12, BRT13 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Non-Zero Crossing FEATURES • ITRMS = 300 mA • High static dV/dt < 10 000 V/ s A 1 6 MT2 • Electrically insulated between input and output circuit C 2 5 NC • Microcomputer compatible - very low trigger


    Original     		PDF BRT11, BRT12, BRT13 BRT12F BRT11H, BRT12H, BRT13H BRT11M, BRT12M, BRT13M BRT12H BRT11H BRT12F-X007T BRT13-H-X017 vde 0844 BRT11-H BRT13H-X017T BRT12H-X009T brt13-h

    BRT12H-X007

    Abstract: BRT13-H-X017 Brt13h OPTOCOUPLER Non-zero voltage detectors BRT12H-X009T BRT12F-X006 optocoupler smd 16 pin brt12 BRT13H-X017T
    Text: BRT11, BRT12, BRT13 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Non-Zero Crossing FEATURES • ITRMS = 300 mA • High static dV/dt < 10 000 V/ s A 1 6 MT2 • Electrically insulated between input and output circuit C 2 5 NC • Microcomputer compatible - very low trigger


    Original     		PDF BRT11, BRT12, BRT13 BRT12F BRT11H, BRT12H, BRT13H BRT11M, BRT12M, BRT13M BRT12H-X007 BRT13-H-X017 OPTOCOUPLER Non-zero voltage detectors BRT12H-X009T BRT12F-X006 optocoupler smd 16 pin brt12 BRT13H-X017T

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiA911EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.101 at VGS = - 4.5 V - 4.5a 0.141 at VGS = - 2.5 V - 4.5a 0.192 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA911EDJ SC-70 SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA817EDJ Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 4.5 V - 4.5a 0.092 at VGS = - 3.7 V - 4.5a 0.125 at VGS = - 2.5 V


    Original     		PDF SiA817EDJ SC-70-6 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF SiA811DJ SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74460

    Abstract: No abstract text available
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF SiA811DJ SC-70 SC-70-6 75trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74460

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    65176

    Abstract: No abstract text available
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		PDF SiA519EDJ 2002/95/EC SC-70-6 11-Mar-11 65176

    65176

    Abstract: S0926 SIA519
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		PDF SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 65176 S0926 SIA519

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original     		PDF SiA533EDJ 081at 2002/95/EC SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		PDF SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA923EDJ SC-70 2002/95/EC SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12