SC75-6L
Abstract: No abstract text available
Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21
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Original
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SiB800EDK
SC-75
SC75-6L-Dual
11-Mar-11
SC75-6L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21
|
Original
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SiB800EDK
SC-75
SC75-6L-Dual
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21
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Original
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SiB800EDK
SC-75
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
sia814dj
Abstract: No abstract text available
Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free
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Original
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SiA814DJ
SC-70
SC-70-6
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free
|
Original
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SiA814DJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free
|
Original
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SiA814DJ
SC-70
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA814DJ Vishay Siliconix N-Channel 30-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free
|
Original
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SiA814DJ
SC-70
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
74460
Abstract: No abstract text available
Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET
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Original
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SiA811DJ
SC-70
SC-70-6
75hay
11-Mar-11
74460
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21
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Original
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SiB900EDK
SC-75
2002/95/EC
SC75-6L-Dual
11-Mar-11
|
PDF
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BRT12H
Abstract: BRT11H BRT13H BRT12F-X007T BRT13-H-X017 vde 0844 BRT11-H BRT13H-X017T BRT12H-X009T brt13-h
Text: BRT11, BRT12, BRT13 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Non-Zero Crossing FEATURES • ITRMS = 300 mA • High static dV/dt < 10 000 V/ s A 1 6 MT2 • Electrically insulated between input and output circuit C 2 5 NC • Microcomputer compatible - very low trigger
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Original
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BRT11,
BRT12,
BRT13
BRT12F
BRT11H,
BRT12H,
BRT13H
BRT11M,
BRT12M,
BRT13M
BRT12H
BRT11H
BRT12F-X007T
BRT13-H-X017
vde 0844
BRT11-H
BRT13H-X017T
BRT12H-X009T
brt13-h
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PDF
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BRT12H-X007
Abstract: BRT13-H-X017 Brt13h OPTOCOUPLER Non-zero voltage detectors BRT12H-X009T BRT12F-X006 optocoupler smd 16 pin brt12 BRT13H-X017T
Text: BRT11, BRT12, BRT13 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Non-Zero Crossing FEATURES • ITRMS = 300 mA • High static dV/dt < 10 000 V/ s A 1 6 MT2 • Electrically insulated between input and output circuit C 2 5 NC • Microcomputer compatible - very low trigger
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Original
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BRT11,
BRT12,
BRT13
BRT12F
BRT11H,
BRT12H,
BRT13H
BRT11M,
BRT12M,
BRT13M
BRT12H-X007
BRT13-H-X017
OPTOCOUPLER Non-zero voltage detectors
BRT12H-X009T
BRT12F-X006
optocoupler smd 16 pin
brt12
BRT13H-X017T
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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Original
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SiA810DJ
SC-70
SC-70-6
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA911EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.101 at VGS = - 4.5 V - 4.5a 0.141 at VGS = - 2.5 V - 4.5a 0.192 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
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SiA911EDJ
SC-70
SC-70-6
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA817EDJ Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 4.5 V - 4.5a 0.092 at VGS = - 3.7 V - 4.5a 0.125 at VGS = - 2.5 V
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Original
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SiA817EDJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET
|
Original
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SiA811DJ
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
74460
Abstract: No abstract text available
Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET
|
Original
|
SiA811DJ
SC-70
SC-70-6
75trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
74460
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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Original
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SiA810DJ
SC-70
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
65176
Abstract: No abstract text available
Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V
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Original
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SiA519EDJ
2002/95/EC
SC-70-6
11-Mar-11
65176
|
PDF
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65176
Abstract: S0926 SIA519
Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V
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Original
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SiA519EDJ
2002/95/EC
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
65176
S0926
SIA519
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a
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Original
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SiA533EDJ
081at
2002/95/EC
SC-70-6
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
|
Original
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SiA810DJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V
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Original
|
SiA519EDJ
2002/95/EC
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21
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Original
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SiB900EDK
SC-75
2002/95/EC
SC75-6L-Dual
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21
|
Original
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SiA923EDJ
SC-70
2002/95/EC
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
