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    SIB900EDK Price and Stock

    Vishay Siliconix SIB900EDK-T1-GE3

    MOSFET 2N-CH 20V 1.5A PPAK8X8
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    DigiKey SIB900EDK-T1-GE3 Digi-Reel 1
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    SIB900EDK-T1-GE3 Cut Tape 1
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    SIB900EDK-T1-GE3 Reel
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    Vishay Intertechnologies SIB900EDK-T1-GE3

    Transistor MOSFET Array Dual N-Channel 20V 1.5A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB900EDK-T1-GE3)
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    Avnet Americas SIB900EDK-T1-GE3 Reel 3,000
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    SIB900EDK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIB900EDK-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.5A SC-75-6 Original PDF

    SIB900EDK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SC-75

    Abstract: No abstract text available
    Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB900EDK Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiB900EDK 18-Jul-08 PDF

    AN609

    Abstract: No abstract text available
    Text: SiB900EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiB900EDK AN609, 31-Mar-09 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 11-Mar-11 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF