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    MACRO X POWER TRANSISTOR Search Results

    MACRO X POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MACRO X POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF837

    Abstract: No abstract text available
    Text: MRF837 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective Macro-X package DESCRIPTION: Macro X Designed primarily for wideband large signal stages in


    Original     		PDF MRF837 870MHz, MRF837

    MRF559

    Abstract: No abstract text available
    Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability


    Original     		PDF MRF559 MRF545 MRF544 MRF559

    MRF559

    Abstract: No abstract text available
    Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability


    Original     		PDF MRF559 MRF559 3-20-0erves

    MRF555T

    Abstract: MRF559 2N5109 BFR90 transistor BFR96 mrf559 v mrf5812 equivalent transistor bfr96 2N3866A 2N4427
    Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package


    Original     		PDF MRF559 MRF559G 150eneral MRF555T MRF559 2N5109 BFR90 transistor BFR96 mrf559 v mrf5812 equivalent transistor bfr96 2N3866A 2N4427

    MRF559

    Abstract: No abstract text available
    Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package


    Original     		PDF MRF559 MRF559G MRF559

    MRF837

    Abstract: No abstract text available
    Text: MRF837 NPN SILICON RF LOW POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE MACRO-X The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.44 5.21 0.175 0.205


    Original     		PDF MRF837 MRF837 mW/870

    MRF941

    Abstract: No abstract text available
    Text: MRF941 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, GNF = 15 dB @ 1 GHz • Low Noise Figure – 1.3dB @ 1GHz • Ftau - 8.0 GHz @ 6v, 15mA • Cost Effective Macro X Package DESCRIPTION:


    Original     		PDF MRF941 MRF941

    MRF951

    Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607
    Text: MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz • Low Noise Figure – 1.3dB @ 1GHz • Ftau - 8.0 GHz @ 6v, 30mA • Cost Effective Macro X Package


    Original     		PDF MRF951 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF951 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607

    2N4427

    Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF555 MRF5943C MRF607
    Text: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability


    Original     		PDF MRF555 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF555 MRF5943C MRF607

    Untitled

    Abstract: No abstract text available
    Text: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability


    Original     		PDF MRF555 MRF545 MRF544

    2N4427

    Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607
    Text: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability


    Original     		PDF MRF557 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607

    2N4427 equivalent bfr91

    Abstract: 13 6 npn 2N4427 equivalent transistor bfr96 transistor BFR91 2N5109 2N5179 BFR90 transistor BFR96 mrf5812 equivalent
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB


    Original     		PDF MRF555 BFR90 MRF545 MRF544 MSC1316 2N4427 equivalent bfr91 13 6 npn 2N4427 equivalent transistor bfr96 transistor BFR91 2N5109 2N5179 BFR90 transistor BFR96 mrf5812 equivalent

    MRF553T

    Abstract: MRF517
    Text: MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB typ @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA • Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz


    Original     		PDF MRF517 To-39 MRF545 MRF544 MRF553T MRF517

    BFR96

    Abstract: No abstract text available
    Text: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz typ @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T


    Original     		PDF BFR96 MRF5812, MRF559 MRF8372 MRF557 MRF557T BFR96

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA


    Original     		PDF BFR96 BFR96G

    BFR91 transistor

    Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB


    Original     		PDF MRF557 BFR90 MRF545 MRF544 MRF557 BFR91 transistor 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB


    Original     		PDF MRF555 MRF545 MRF544 MSC1316

    BFR96

    Abstract: MRF586 bfr96 equivalent
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, BFR96 MRF586 bfr96 equivalent

    MRF553G

    Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


    Original     		PDF MRF553 MRF553G MRF553G 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553

    BFR90

    Abstract: No abstract text available
    Text: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz typ @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T


    Original     		PDF BFR90 MRF545 MRF544 BFR90

    MRF586

    Abstract: mrf571 2N4427 2N5109 2N5179 2N6255 MRF3866 MRF3866G MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF3866G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Low Cost SO-8 Plastic Surface Mount Package.


    Original     		PDF MRF3866, MRF3866G, MRF586 mrf571 2N4427 2N5109 2N5179 2N6255 MRF3866 MRF3866G MRF4427 MRF553

    MRF517

    Abstract: VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA


    Original     		PDF MRF517 To-39 MRF517 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427

    BFR96

    Abstract: s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA


    Original     		PDF BFR96 BFR96G BFR96 s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G

    MRF846

    Abstract: CASE 305A-01 MRF844 MRF870A 305a MRF839 mrf892 305a-01 case 244-04 case 317-01
    Text: RF PRODUCTS — EJIPOLAR POWER TRANSISTORS continued CASE 244-04 (.280'' Stud; CASE 305A-01 ( 204" Pill) CASE 305-01 (.204" Stud) CASE 319-04 (CS-12) CASE 317-01 (Macro-X) UHF: Applications (continued) _ I 8 0 6 -9 6 0 MHz, FM Transistors Designed specifically for the 800 MHz mobile radio band, types MRF840 through 846 offer superior gain and ruggedness, using


    OCR Scan     		PDF 05A-01 CS-12) MRF840 CS-12 MRF559 MRF581 MRF837 317-0e MRF846 CASE 305A-01 MRF844 MRF870A 305a MRF839 mrf892 305a-01 case 244-04 case 317-01