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Microchip Technology Inc MRF8372 RF TRANS NPN 16V 870MHZ 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8372	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.4375	Buy Now
Microchip Technology Inc MRF8372G RF TRANS NPN 16V 870MHZ 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8372G	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.4375	Buy Now
Microchip Technology Inc MRF8372R1 RF TRANS NPN 16V 870MHZ 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8372R1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.4375	Buy Now
Microchip Technology Inc MRF8372R2 RF TRANS NPN 16V 870MHZ 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8372R2	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.4375	Buy Now
Microchip Technology Inc MRF8372MR1 TRANS NPN 16V 200MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8372MR1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MRF837 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF837	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR	Original	PDF
MRF837	Advanced Semiconductor	NPN SILICON RF LOW POWER TRANSISTOR	Original	PDF
MRF837	Microsemi	Bipolar/LDMOS Transistor	Original	PDF
MRF837	Motorola	European Master Selection Guide 1986	Scan	PDF
MRF837	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MRF8372	Advanced Semiconductor	NPN SILICON LOW POWER TRANSISTOR	Original	PDF
MRF8372	Microsemi	RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR	Original	PDF
MRF8372	Microsemi	Bipolar/LDMOS Transistor	Original	PDF
MRF8372	Motorola	RF LOW POWER TRANSISTOR NPN SILICON	Original	PDF
MRF8372	Motorola	European Master Selection Guide 1986	Scan	PDF
MRF8372	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MRF8372G	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Original	PDF
MRF8372G	Microsemi	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8	Original	PDF
MRF8372GR1	Microsemi	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8	Original	PDF

MRF8372GR2	Microsemi	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8	Original	PDF
MRF8372R1	Microsemi	RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR	Original	PDF
MRF8372R1	Motorola	RF LOW POWER TRANSISTOR NPN SILICON	Original	PDF
MRF8372R2	Microsemi	RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR	Original	PDF
MRF8372R2	Motorola	RF LOW POWER TRANSISTOR NPN SILICON	Original	PDF

MRF837 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8372 motorola Abstract: NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics	Original	MRF8372/D MRF8372R1, MRF8372 8372 motorola NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz	PDF
MRF8372 Abstract: MRF8372G Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical	Original	MRF8372, MRF8372G, 870MHz, MRF8372 MRF8372G	PDF
Untitled Abstract: No abstract text available Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package DESCRIPTION: SO-8 R1 suffix–Tape and Reel, 500 units	Original	MRF8372, 870MHz,	PDF
MRF8372 Abstract: PG 750 8 PIN Text: MRF8372 NPN SILICON LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. PACKAGE STYLE SO-8 FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60% typical • R1 suffix – Tape and Reel, 500 units	Original	MRF8372 MRF8372 PG 750 8 PIN	PDF
mrf8372 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics	Original	MRF837/D MRF837 MRF8372, MRF837 MRF837/D* mrf8372	PDF
52803 Abstract: No abstract text available Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units	Original	MRF8372, MRF8372 870MHz, MRF8372 52803	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB •	Original	MRF837 870MHz,	PDF
MRF837 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB •	Original	MRF837 870MHz, MSC1318 MRF837	PDF
motorola 8372 Abstract: 8372 motorola Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics	Original	MRF8372/D MRF8372 MRF8372R1, MRF8372/D motorola 8372 8372 motorola	PDF
MRF8372 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB	Original	MRF8372, 870MHz, MSC1318 MRF8372	PDF
Untitled Abstract: No abstract text available Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical	Original	MRF8372, MRF8372G, 870MHz,	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 MRF837G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics	Original	MRF837 MRF837G 870MHz,	PDF
MRF837 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF837 MRF837G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics	Original	MRF837 MRF837G 870MHz, MRF837	PDF
MRF837 Abstract: No abstract text available Text: MRF837 NPN SILICON RF LOW POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE MACRO-X The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.44 5.21 0.175 0.205	Original	MRF837 MRF837 mW/870	PDF

MRF581G Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581 Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA	Original	MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
mce544 Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630 Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630	PDF
2N4427 Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39	Original	2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427	PDF
MHW707-2 Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861 Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar	Original	714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861	PDF
2n4427 MOTOROLA Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz	Original	2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola	PDF
MRF586 Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA	Original	MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF8372 The RF Line NPN Silicon High-Frequency TVansistor . . . designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW	OCR Scan	MRF8372 9-j20 MRF8372	PDF
V 518 J19 Abstract: j6812 MRF837 transistor j147 J-6812 Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF837 The RF Line 750 m W NPN SILICON RF LOW POWER TRANSISTOR . d e sign e d prim arily for w ide b and large s ign al predriver stage s in 800 M H z an d U H F frequency ranges. 870 M H z RF LOW POWER TRANSISTOR	OCR Scan	MRF837 Continu775 V 518 J19 j6812 MRF837 transistor j147 J-6812	PDF
ferroxcube 56-590-65 Abstract: MRF8372 equivalent macro-X ceramic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics	OCR Scan	MRF8372 2-J16 MRF837 MRF8372, ferroxcube 56-590-65 MRF8372 equivalent macro-X ceramic	PDF

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MRF837 Datasheets (19)

MRF837 Datasheets Context Search

8372 motorola

MRF8372

Untitled

MRF8372

mrf8372

52803

Untitled

MRF837

motorola 8372

MRF8372

Untitled

Untitled

MRF837

MRF837

MRF581G

MC68B21CP

mce544

2N4427

MHW707-2

2n4427 MOTOROLA

MRF586

Untitled

V 518 J19

ferroxcube 56-590-65