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    M58WR064HT Search Results

    M58WR064HT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M58WR064HT Numonyx 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories Original PDF
    M58WR064HT60ZB6E Numonyx 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories Original PDF

    M58WR064HT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M58WR064HB

    Abstract: A0-A21 CR10 M58WR064HT VFBGA56
    Text: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064HT M58WR064HB 66MHz M58WR064HB A0-A21 CR10 M58WR064HT VFBGA56

    8811h

    Abstract: No abstract text available
    Text: M58WR064HT M58WR064HB M58WR032HT M58WR032HB 64 Mbit or 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Features summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064HT M58WR064HB M58WR032HT M58WR032HB 66MHz 8811h

    A0-A21

    Abstract: CR10 M58WR064HB M58WR064HT VFBGA56
    Text: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064HT M58WR064HB 66MHz A0-A21 CR10 M58WR064HB M58WR064HT VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58WR064HT M58WR064HB 64 Mbit 4 Mb x16, multiple bank, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58WR064HT M58WR064HB

    Untitled

    Abstract: No abstract text available
    Text: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, multiple bank, burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multichip package Features • Multichip package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) PSRAM ■ Supply voltage


    Original     		PDF M36W0R6050T1 M36W0R6050B1 M36W0R6050T1: 8810h M36W0R6050B1: 8811h

    A0-A21

    Abstract: M36W0R6050B1 M36W0R6050T1
    Text: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM


    Original     		PDF M36W0R6050T1 M36W0R6050B1 M36W0R6050T1: 8810h M36W0R6050B1: 8811h TFBGA88 128-bit 64-bit A0-A21 M36W0R6050B1 M36W0R6050T1

    MSP55lv512

    Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
    Text: ＡＦ９８４５／４５Ｂ／４５Ｃ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９８４５ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｂ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｃ ＧＡＮＧ ＵＮＩＴ Ｆｌａｓｈ Ｓｕｐｐｏｒｔ Ｇｒｏｕｐ，Ｉｎｃ．


    Original     		PDF AF9723/23B TEF808-50CF-01 FF804 50CARD AF9845/45B/45C FAT12FAT16 1GBit128MByte Am27C400 Am29DL16xCB TE003-48BG-07D MSP55lv512 MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A

    Numonyx

    Abstract: A0-A21 M36W0R6050B1 M36W0R6050T1
    Text: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM


    Original     		PDF M36W0R6050T1 M36W0R6050B1 M36W0R6050T1: 8810h M36W0R6050B1: 8811h TFBGA88 128-bit Numonyx A0-A21 M36W0R6050B1 M36W0R6050T1

    numonyx

    Abstract: M36W0R604BT1 M36W0R604 M58WR064HTB PSRAM JESD97 M36W0R6040T1 M69AR024B 8810h 8811h
    Text: M36W0R6040T1 M36W0R604BT1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package Features • Multi-chip package – 1 die of 64 Mbit (4 Mb x 16) Flash memory – 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM ■


    Original     		PDF M36W0R6040T1 M36W0R604BT1 M36W0R6040T1: 8810h M36W0R604BT1: 8811h 128-bit 64-bit numonyx M36W0R604BT1 M36W0R604 M58WR064HTB PSRAM JESD97 M36W0R6040T1 M69AR024B 8810h 8811h

    MSP14LV160

    Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
    Text: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ


    Original     		PDF AF9708/09/09B/10/23 nearest09 AF9709B/09C AF9723 AF9708 TE004-44PL-04 AF9709 MSP14LV160 MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512