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    M58LT128HB

    Abstract: M58LT128HT CR10 VFBGA56 026h
    Text: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


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    M58LT128HT M58LT128HB VFBGA56 M58LT128HB M58LT128HT CR10 VFBGA56 026h PDF

    M36L0T7050T2

    Abstract: M58LT128HB M58LT128HT M36L0t7050
    Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM


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    M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h M36L0T7050T2 M58LT128HB M58LT128HT M36L0t7050 PDF

    M36L0T7060B

    Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
    Text: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory


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    M36L0T7060T2 M36L0T7060B2 M36L0T7060T2: 88C4h M36L0T7060B2: 88C5h M36L0T7060B M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7 PDF

    M58LT128HT

    Abstract: Numonyx M36L0T7050T2 M58LT128HB M58LT128HTB 32-Mbit
    Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multi-Level, Burst Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


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    M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h 52MHz M58LT128HT Numonyx M36L0T7050T2 M58LT128HB M58LT128HTB 32-Mbit PDF