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    M28F411 Price and Stock

    STMicroelectronics M28F411-120N5BPT

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M28F411-120N5BPT 7,500
    • 1 $4.05
    • 10 $4.05
    • 100 $4.05
    • 1000 $4.05
    • 10000 $1.4175
    		Buy Now

    STMicroelectronics M28F411-120N5BTR

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M28F411-120N5BTR 4,500
    • 1 $4.05
    • 10 $4.05
    • 100 $4.05
    • 1000 $4.05
    • 10000 $1.4175
    		Buy Now

    SGS Semiconductor Ltd M28F411120N5BPT

    4 MBIT (512KBIT X8, BOOT BLOCK) FLASH MEMORY Flash, 512KX8, 120ns, PDSO40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA M28F411120N5BPT 1,026
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    M28F411 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M28F411-100N1 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100N1TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100N3 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100N3TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100N5 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100N5TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100N6 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100N6TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN1 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN1TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN3 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN3TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN5 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN5TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN6 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-100XN6TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-120N1 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-120N1TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-120N3 STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28F411-120N3TR STMicroelectronics 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF

    M28F411 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    brief

    Abstract: M28F411
    Text: M28F411 4 Mbit 512Kb x8, Boot Block Flash memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware


    Original     		PDF M28F411 512Kb TSOP40 TheM28F411Flash microproA18 M28F411 100ns 120ns AI01134D brief

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F410/420, M28F411/421 T6-U10: TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY DATA BRIEFING MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks – One 96K Byte Main Block – Three 128K Byte Main Blocks


    Original     		PDF M28F411 M28F421 20/25mA TSOP40 M28F421 AI01134C 100ns 120ns

    AN1004

    Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
    Text: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using


    Original     		PDF AN1004 M28F220, M28F420, M28F411, M28W431 T6-U20) AN1004 M28F220 M28F410 M28F411 M28F420

    1N914

    Abstract: M28F411
    Text: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks


    Original     		PDF M28F411 M28F421 TSOP40 20/25mA M28F411 M28F42tent 1N914

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F410/420, M28F411/421 TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16

    M28F220

    Abstract: AN1004 M28F410 M28F411 M28F420 M28W431
    Text: AN1004 APPLICATION NOTE Write Protect Function for 2 Mbit and 4 Mbit Boot Block Flash Memories INTRODUCTION The performance of the 2 Mbit and 4 Mbit Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using


    Original     		PDF AN1004 M28F220, M28F420, M28F411, M28W431 T6-U20) M28F220 AN1004 M28F410 M28F411 M28F420

    M28F411

    Abstract: No abstract text available
    Text: M28F411 4 Mb 512K x 8, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware


    Original     		PDF M28F411 TSOP40 M28F411 AI01134D 120ns

    M28F411

    Abstract: M28F420
    Text: QUALIFICATION REPORT M28F410/420, M28F411 T6-U20: 4 Mb FLASH MEMORIES in SO44 and TSOP40, AGRATE R1 DIFFUSION LINE INTRODUCTION The M28F410/420 are 4Mb Dual Supply 5/12V Boot Block Flash memories organised as 512K x 8 bits or 256K x 16 bits. The M28F411 is a 4 Mb Dual Supply (5/12V) Boot Block Flash memory organised as


    Original     		PDF M28F410/420, M28F411 T6-U20: TSOP40, M28F410/420 5/12V) T6-U20 M28F420

    M28F411

    Abstract: No abstract text available
    Text: M28F411 4 Mbit 512Kb x8, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware


    Original     		PDF M28F411 512Kb TSOP40 TheM28F411Flash M28F411

    M28F411

    Abstract: No abstract text available
    Text: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks


    Original     		PDF M28F411 M28F421 TSOP40 20/25mA M28F411 M28F42patent

    CDIP32

    Abstract: M28F411 QR123 endurance test report CDIP32 package
    Text: QUALIFICATION REPORT M28F411 T6-U20: 4 Mb x8 FLASH MEMORY in TSOP40, CATANIA M5 DIFFUSION LINE INTRODUCTION The M28F411 is a 4Mb Dual Supply (5/12V) Boot Block Flash memory organised as 512K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.6 micron T6-U20 (-20% upgrade) process which


    Original     		PDF M28F411 T6-U20: TSOP40, 5/12V) T6-U20 TSOP40 10x20 CDIP32 QR123 endurance test report CDIP32 package

    TSOP40

    Abstract: M28F410 M28F411
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F410/420, M28F411/421 TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16 TSOP40 M28F410 M28F411

    TSOP40

    Abstract: M28F410 M28F411
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F410/420, M28F411/421 T6-U10: TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16 TSOP40 M28F410 M28F411

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    TOP SIDE MARKING M27C512

    Abstract: No abstract text available
    Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    M27C512 SGS-THOMSON

    Abstract: M2201 ST93C46
    Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: n r z *¿7 i. M28F411 M28F421 S C S -T H O M S O N R 0 ö » ilL I g fM O ( g i CMOS 4 Megabit (x 8, 7 Blocks FLASH MEMORY ADVANCE DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


    OCR Scan     		PDF M28F411 M28F421 TSOP40 20/25mATypical M28F411,

    f421

    Abstract: v421 6080ns
    Text: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)


    OCR Scan     		PDF M28F411, M28V411, TSOP40 r------------1196 f421 v421 6080ns

    Untitled

    Abstract: No abstract text available
    Text: M28F411 M28F421 SGS-THOMSON ìl i 4 Megabit x 8, Block Erase FLASH MEMORY PRELIM INARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­ tection


    OCR Scan     		PDF M28F411 M28F421 TSOP40 20/25mA M28F421

    HE87

    Abstract: No abstract text available
    Text: $ 7 . M28F411 M28F421 S G S -T H O M S O N M S © § L iE O T © IiD § ll 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


    OCR Scan     		PDF M28F411 M28F421 TSOP40 20/25m M28F421 M28F411, HE87

    F421

    Abstract: No abstract text available
    Text: SGS-1H0MS0N M28F411, F421 M28V411, V421 IO CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ADVANCE DATA S M ALL SIZE TSO P40 PLASTIC P A C K A G E - Normal and Reverse Pinout i M EM O R Y E R A S E in B L O C K S - One 16K Boot Block (top or bottom location)


    OCR Scan     		PDF M28F411, M28V411, M28F411 100ns F421

    A15CZ

    Abstract: P40N10 A12CZ
    Text: Gl SGS-TTiOMSON m M28F411 4 Mb 512K x 8, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware


    OCR Scan     		PDF M28F411 M28F411 A15CZ A13CZ A12CZ 120ns 113AC P40N10

    Untitled

    Abstract: No abstract text available
    Text: F 5 M28F411 . 4 Mbit 512Kb x8, Boot Block Flash Memory • 5 V ± 10% SUPPLY VOLTAGE ■ ■ ■ ■ 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware


    OCR Scan     		PDF M28F411 512Kb 28F411 TSOP40