1n3069
Abstract: No abstract text available
Text: i, Una. TELEPHONE: 973 376-2922 '(212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1 N3OB5, 1 N3111,1 N51 B2SERIES 15O Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N3111 1N308S
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N3111
1N3111
1N308S
tN5162
W50H2
-150A
00-205AC
IDO-30)
1N3086R.
J60EC
1n3069
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led 3mm red
Abstract: 3MM LED RED "yellow led" 1.6mm
Text: VISIBLE LED LAMPS 3mm PCB indicators Page 1 of 1 Lxx362D series bi-level Package Features 2.9 ±0.5 4.32 Right angle, pcb mounting indicators 2.03 Bi-level 3mm LEDs 9.65 0.76 LED 1 LED 2 ø2.9 2.54 Coloured diffused lens 3.5 ±0.5 Rugged, black Nylon 6.6 housing, flame retardant
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Lxx362D
UL94V-2
100mA
led 3mm red
3MM LED RED
"yellow led" 1.6mm
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LUG32w
Abstract: LUR32D SLR343BDT3F 3MM LED RED LUG32C LUG32D LHR32D LHR33D LUO32D LUR32C
Text: OPTOELECTRONICS LEDs, 3mm STANDARD 3mm For suitable mountings see page 472 Case & Viewing Angle Emitted Colour Brightness Lens Colour Typ. Luminous Intensity IF = 20mA mcd Manf. Part No. & Order Code 2.6 14.6 10.4 12.6 LHR33D LUR33D LUY33D LUG33D Dimensions (mm)
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LHR33D
LUR33D
LUY33D
LUG33D
LUR362D
LMR362D
LUY362D
LUG362D
LURG362D
LUR363D
LUG32w
LUR32D
SLR343BDT3F
3MM LED RED
LUG32C
LUG32D
LHR32D
LHR33D
LUO32D
LUR32C
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induction furnace circuit diagram
Abstract: INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING
Text: THE ELECTROMAGNET Visible Micro Gamma Rays Wavelength Frequency, Hz: 0.1Å X-Rays U.V. Infrared EHF 10Å 100Å 0.1µ 1Å 1µ 10µ 100µ 0.1cm 1cm 3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 3x1 cycles per second VISIBLE SHORT WAVELENGTH
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3x1019
3x1018
3x1017
3x1016
3x1015
3x1014
3x1013
3x1012
3x1011
induction furnace circuit diagram
INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING
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5mm LED projects
Abstract: lmr53de water level indicator mcd 5000 led blue 5mm LUR53D LUY53D LUGR59M LHR53D LUG53C LUG53D
Text: OPTOELECTRONICS LEDs, 5mm STANDARD For suitable mountings see page 472 5mm Case & Viewing Angle 35° Lens Colour Typ. Luminous Intensity IF = 20mA mcd Manf. Part No. & Order Code red-diffused red-diffused orange-diffused amber-diffused yellow-diffused green-diffused
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LHR53D
LUR53D
LUO53D
LUA53D
LUY53D
LUG53D
LUR53C
LUY53C
LUG53C
LUR564D
5mm LED projects
lmr53de
water level indicator
mcd 5000 led blue 5mm
LUR53D
LUY53D
LUGR59M
LHR53D
LUG53C
LUG53D
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Untitled
Abstract: No abstract text available
Text: VISIBLE LED LAMPS 5mm PCB indicators Page 1 of 1 Lxx562D series bi-level Package 3.6 ±0.5 6.2 Features 11.1 LED 1 ø4.8 Right angle, pcb mounting indicators 12.4 6.3 LED 2 Bi-level 5mm LEDs CATHODE Coloured diffused lens 0.5 sq. 10.0 min. Solid state reliability
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Lxx562D
UL94V-2
100mA
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IN4385
Abstract: IN4142 IN5060 in4140 IN2070 IN4720 IN4143 IN3193 in4001-in4007 in4722
Text: uvtriA vrtR SYSTEMS LTD 3f l E D • M T 7 7 Lm 3 □□OOOPg 5 ■ JSL r-o3-’ Axial Lead Silicon Rectifiers Meta lurgicaliy Bonded (DO-41 PACKAG E Case Material U/L 9 4V-0 Rated D IA . .1 0 7 ( 2 .7 ) .0 3 4 ( . 9 ) .0 2 8 ( . 7 ) .0 8 0 ( 2 .0 ) o ~ r
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DO-41
IN4001-IN4007
IN4001
IN4002
IN4003
IN4004
IN4005
IN4006
IN4007
IN2858
IN4385
IN4142
IN5060
in4140
IN2070
IN4720
IN4143
IN3193
in4001-in4007
in4722
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14DK471
Abstract: 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471
Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection, lurge protection in consumer electronics, lurge protection in industrial electronics. Jurge protection in communication, measuring and
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Vcat20Â
14DK471
07DK391
20dk431
SiC varistor
14DK431
sec 472 varistor
varistor ve 17
varistor 471 14
10DK271
varistor 7 k 471
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Untitled
Abstract: No abstract text available
Text: Bi-Color & Bi-Polar LEDs P a rt N um ber Shape LUGR59W 5mm Round LUYR59W LUGY59W I'T i LMRMG59W-CC V I*' LUGR59M LUGR59M-CA LUYR59M LUGY59M LMRMG59M-CC 8mm Round Em itting C olor Em itting M aterial Red Green Red Yellow Green Yellow Red Green Red Green Red
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LUGR59W
LUYR59W
LUGY59W
LMRMG59W-CC
LUGR59M
LUGR59M-CA
LUYR59M
LUGY59M
LMRMG59M-CC
SUGY18M
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MI-50-150NM
Abstract: 5050S
Text: • Ä P ALUMINUM NITRIDE COAXIAL TERMINATIONS MI-50- 15S/ALN MI-50- 15SM/ALN MI-50- 50S/ALN MI-50- 50SM/ALN MI-50- 100S/ALN MI-50- 100S1VI/ALN MI-50- 150S/ALN MI-50 150SM/ALN MI-50 250S/ALN MI-50 250SM/ALN 15 15 50 50 100 100 150 150 250 250 12 12 6 6 3 3
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MI-50-
15S/ALN
15SM/ALN
50S/ALN
50SM/ALN
100S/ALN
MI-50-150NM
5050S
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Untitled
Abstract: No abstract text available
Text: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V 2.00 Case Style Features • Superior High Spued M icrow ave Switching Diode • 2-3 Nanosecond Sw itching W h e n D riven From T i l Logic • Capacitance as Low as 0.025 pF Specified at 10 G H z
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MA4GP900
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957b
Abstract: ic 957B 1N9718 957B 62 964b
Text: 1 N 957B , thru 1 N 992B , -1 DO-35 Microsemi Corp. ' T h e àxxMs expert* S C O T T S D A L E , A7. For more informatkm caìl: 602 941-6300 FEATURES SIU C O N 500 mW ZENER DIO DES • 6.8 TO 200 V ZEN ER VOLTAGE RANGE • 1 N962B-1 THRU 1 N992B-I AVAILABLE IN JA N , JA N T X AND JA N T X V QUALIFICATIONS
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DO-35
N962B-1
N992B-I
MIL-S-19500/117.
00037bfl
957b
ic 957B
1N9718
957B 62
964b
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Untitled
Abstract: No abstract text available
Text: I Microjsemi Corp. f doctoexperts SANTA ANA, CA SCOTTSDALE, AZ 1N 962B thru 1N 973B D O -3 5 ☆ JA N S ? F o r m o r e in f o r m a ti o n call: 714 97 9-8220 SILICON 400 mW ZENER DIODES FEA TU R ES • 6.8 TO 200 V Z E N E R VOLTAG E R A NGE • A V A ILA B LE IN J A N , J A N T X AND JA N T X V AND JANS Q U A LIFIC A TIO N S
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Untitled
Abstract: No abstract text available
Text: 1N754A-1 thru 1N759A-1 DO-35 ☆JANS* Microsemi Corp. ' The diode experts SANTA A N A , CA SC O TTSD A LE, A Z For m ore inform ation call: 714 979-8220 SILICON 400 mW ZENER DIODES FEATURES • Z E N E R VOLTAGE 6.8 V to 12.0 V • A V A ILA B LE IN J A N . J A N T X . JA N T X V -1 AND JA N S Q UALIFICATIO NS TO M IL-S -19 5 0 0 /1Z7
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1N754A-1
1N759A-1
DO-35
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Untitled
Abstract: No abstract text available
Text: MOTOROLA ✓ SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Standard Recovery Power Rectifier MRA4007T3 SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted Automotive application
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MRA4007T3
1-SOO-S21-4274
M8R0620CT/D
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Untitled
Abstract: No abstract text available
Text: CAGE JACK PERFORMANCE DATA AVERAGE CAGE JACK 0.014 0,36 WIRE SIZE 28AWG CONTACT RESISTANCE AI1 ° C = A T RATED CURRENT A l 1° C = A T MAX. CURRENT CARRYING CAPACITY* At 30° C - AT 1.77 mfi 1.0 Amps. 7.3 Amps. WIRE RATING @ 710 CM PER AMP. AT AT WIRE RATING
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28AWG
20AWG
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Untitled
Abstract: No abstract text available
Text: < £ 2 i L G S P ro d u c t S p e c ific a tio n Z8410/Z84C10 NMOS/CMOS Z80 DMA Direct Memory Access Controller FEATURES • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and edge timing can be programmed to match the speed of
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Z8410/Z84C10
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Untitled
Abstract: No abstract text available
Text: CERAvtf/7Z" INTRODUCTION 100,000 PTCR TECHNOLOGY PTCR’s Positive Temperature Coefficient Resistors are made from high purity semi-conducting cer amics. Based on complex titanate chemical compositions (BaTiCb, SrTiCb, etc.), their specific perfor mance is created by the addition of dopants and unique processing, including high force pressing into
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PE210
Abstract: 04XAA
Text: TISP4072F3, TISP4082F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 0 1997. Powar Innovations Limited, UK MARCH 18W- REV ISED SEPTEM BER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region D PACKAGE TOP V K W Precise and Stable Voltage
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TISP4072F3,
TISP4082F3
4072F3
80will
PE210
04XAA
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high voltage current mirror
Abstract: schematic diagram DC amplifier schematic diagram DC POWER SUPPLY LM3900N digital 5.1 amplifier diagram schematic LM3900 negative resistance amplifier LM3900N application note
Text: Sem iconductors National Sem iconductor Linear I. C . 's - Operational Amplifiers SC H E M A TIC A N D CONNECTION D IA G R A M Q u ad O perational A m plifier REFERENCE TA B LE Code S tock No. LM3900N quad am plifier 33139E D ual-In-Line-P ackage V+ 114 GENERAL DESCRIPTION
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LM3900N
33139E
LM3900
36Vcircuits.
high voltage current mirror
schematic diagram DC amplifier
schematic diagram DC POWER SUPPLY
digital 5.1 amplifier diagram schematic
negative resistance amplifier
LM3900N application note
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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9B2B
Abstract: 1N9618 1N96B 1N96 1n zener
Text: 1 N 9 5 7 B, - / thru Micro/semi Corp. $ The O ’O d e expe rts ! SCOTTSDALE, A7. 1 N9 9 2 B , -1 DO-35 F o r m o re in fo rm a tio n cali: 6 0 2 9 4 1 -6 3 0 0 SILICON 500 mW ZENER DIODES FEATURES • 6.8 T O 200 V Z E N E R V O LT A G E R A N G E • 1N962B-1 TH R U 1N992B-1 A V A IL A B L E IN J A N , J A N T X A N D J A N T X V Q U A LIFIC A T IO N S
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DO-35
1N962B-1
1N992B-1
IL-S-19500
500mW
9B2B
1N9618
1N96B
1N96
1n zener
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1S1618
Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Text: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS
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1N957B
1N992B
1N962B
MIL-S-195Q0/117
1N973B
1NJ57Í
1N93I«
1N9S08
1H961B
1S1618
IN987B
do-7 diode iss
IN987
IN9778
ic 957B
SJ 76 A DIODE EMI
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marking anw sot-23
Abstract: ANW SOT marking ANW 80URCE
Text: MOTOROLA O rder th is d o o u m tn t by MMBF0202PLT1/D SEMICONDUCTOR TECHNICAL DATA Green ' 9 / I i n e Low rDS on Small-Signal MOSFETb TMOSPSIngle P-Channel Field Effect Transistors Part of the GreenUne™ Portfolio of devices with energy-conserving traits.
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MMBF0202PLT1/D
marking anw sot-23
ANW SOT
marking ANW
80URCE
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