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    LOW QG MOSFET Search Results

    LOW QG MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    LOW QG MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf6785mpbf

    Abstract: No abstract text available
    Text: DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency


    Original     		PDF IRF6785MTRPbF irf6785mpbf

    Untitled

    Abstract: No abstract text available
    Text: PD - 97282 DIGITAL AUDIO MOSFET IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency


    Original     		PDF IRF6785MTRPbF

    irfb4019

    Abstract: PN channel MOSFET 10A highly efficient class d audio amplifier 200W highly efficiency Amplifier IRFB4019PBF
    Text: PD - 97075 IRFB4019PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 RDS ON typ. @ 10V 80 V m: • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ.


    Original     		PDF IRFB4019PbF O-220AB O-220AB irfb4019 PN channel MOSFET 10A highly efficient class d audio amplifier 200W highly efficiency Amplifier IRFB4019PBF

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)


    Original     		PDF SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses


    Original     		PDF Si4392ADY 2002/95/EC Si4392ADY-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)


    Original     		PDF SiHW47N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    PN channel MOSFET 10A

    Abstract: digital audio mosfet irfb4019
    Text: PD - 97075 IRFB4019PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 RDS ON typ. @ 10V 80 V m: • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ.


    Original     		PDF IRFB4019PbF O-220AB IRF1010 O-220AB PN channel MOSFET 10A digital audio mosfet irfb4019

    IRFS5620PBF

    Abstract: No abstract text available
    Text: PD - 96205 DIGITAL AUDIO MOSFET IRFS5620PbF IRFSL5620PbF Features • Key Parameters Optimized for Class-D Audio Key Parameters Amplifier Applications VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved


    Original     		PDF IRFS5620PbF IRFSL5620PbF O-262 EIA-418. IRFS5620PBF

    Untitled

    Abstract: No abstract text available
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • Low input capacitance (Ciss) 0.039 • Reduced switching and conduction losses


    Original     		PDF SiHG73N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFPS40N60K, SiHFPS40N60K 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		PDF SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		PDF SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHP33N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHP33N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses


    Original     		PDF SiHW47N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		PDF SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		PDF SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reduced switching and conduction losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		PDF SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    CSD23201W10

    Abstract: No abstract text available
    Text: P-Channel CICLON NexFET Power MOSFETs CSD23201W10 Product Summary Features • Ultra Low Qg & Qgd D  Small Footprint D VDS -12 V Qg 1.8 nC Qgd  Low Profile 0.65mm height G  Pb Free S RDS on  Gate ESD Protection – 3kV nC 110 m VGS=-2.5V


    Original     		PDF CSD23201W10 CSD23201W10

    Untitled

    Abstract: No abstract text available
    Text: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHW33N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    CSD23201W10

    Abstract: No abstract text available
    Text: P-Channel CICLON NexFET Power MOSFETs CSD23201W10 Product Summary Features • Ultra Low Qg & Qgd D  Small Footprint D VDS -12 V Qg 1.8 nC Qgd  Low Profile 0.65mm height G  Pb Free S RDS on  Gate ESD Protection – 3kV nC 110 m VGS=-2.5V


    Original     		PDF CSD23201W10 CSD23201W10