Untitled
Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency
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IRF6785MTRPbF
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irf6785mpbf
Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency
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IRF6785MTRPbF
irf6785mpbf
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97282 DIGITAL AUDIO MOSFET IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency
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IRF6785MTRPbF
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irfb4019
Abstract: PN channel MOSFET 10A highly efficient class d audio amplifier 200W highly efficiency Amplifier IRFB4019PBF
Text: PD - 97075 IRFB4019PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 RDS ON typ. @ 10V 80 V m: • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ.
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IRFB4019PbF
O-220AB
O-220AB
irfb4019
PN channel MOSFET 10A
highly efficient class d audio amplifier
200W highly efficiency Amplifier
IRFB4019PBF
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PDF
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Irfb4019
Abstract: No abstract text available
Text: PD - 97075 IRFB4019PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 RDS ON typ. @ 10V 80 V m: • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ.
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IRFB4019PbF
O-220AB
O-220AB
Irfb4019
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Untitled
Abstract: No abstract text available
Text: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)
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Original
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SiHG47N65E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses
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Si4392ADY
2002/95/EC
Si4392ADY-T1-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)
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Original
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SiHW47N65E
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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PN channel MOSFET 10A
Abstract: digital audio mosfet irfb4019
Text: PD - 97075 IRFB4019PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 RDS ON typ. @ 10V 80 V m: • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ.
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IRFB4019PbF
O-220AB
IRF1010
O-220AB
PN channel MOSFET 10A
digital audio mosfet
irfb4019
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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IRFPS40N60K,
SiHFPS40N60K
2002/95/EC
Super-247
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHW73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses
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SiHW73N60E
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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IRFS5620PBF
Abstract: No abstract text available
Text: PD - 96205 DIGITAL AUDIO MOSFET IRFS5620PbF IRFSL5620PbF Features • Key Parameters Optimized for Class-D Audio Key Parameters Amplifier Applications VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved
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IRFS5620PbF
IRFSL5620PbF
O-262
EIA-418.
IRFS5620PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • Low input capacitance (Ciss) 0.039 • Reduced switching and conduction losses
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Original
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SiHG73N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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AN-994
Abstract: digital audio mosfet
Text: PD - 96205 IRFS5620PbF IRFSL5620PbF DIGITAL AUDIO MOSFET Features • Key Parameters Optimized for Class-D Audio Key Parameters Amplifier Applications VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved
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IRFS5620PbF
IRFSL5620PbF
O-262
EIA-418.
AN-994
digital audio mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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Original
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IRFPS40N60K,
SiHFPS40N60K
2002/95/EC
Super-247
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96204 IRFS5615PbF IRFSL5615PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved
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IRFS5615PbF
IRFSL5615PbF
O-262
EIA-418.
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses
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Original
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SiHG73N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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ClassD Amplifier 100v
Abstract: IRFS4020 IRFS40
Text: PD - 97393 IRFS4020PbF IRFSL4020PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key parameters optimized for Class-D audio VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved
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IRFS4020PbF
IRFSL4020PbF
O-262
EIA-418.
ClassD Amplifier 100v
IRFS4020
IRFS40
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AN-994
Abstract: digital audio mosfet 12v 300w audio amplifier circuit
Text: PD - 96204 IRFS5615PbF IRFSL5615PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved
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IRFS5615PbF
IRFSL5615PbF
O-262
EIA-418.
AN-994
digital audio mosfet
12v 300w audio amplifier circuit
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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Original
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IRFPS40N60K,
SiHFPS40N60K
2002/95/EC
Super-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFPS40N60KPBF
Abstract: No abstract text available
Text: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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Original
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IRFPS40N60K,
SiHFPS40N60K
2002/95/EC
Super-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFPS40N60KPBF
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses
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SiHG33N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses
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SiHB23N60E
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses
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SiHP23N60E
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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