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Vishay Siliconix SIHB23N60E-GE3 MOSFET N-CH 600V 23A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB23N60E-GE3	Tube	200		1	1 $3.4 10 $3.4 100 $3.4 1000 $3.4 10000 $3.4	Buy Now
Vishay Intertechnologies SIHB23N60E-GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHB23N60E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHB23N60E-GE3	Reel		18 Weeks	1,000	1 - 10 - 100 - 1000 $1.76375 10000 $1.65934	Buy Now
Mouser Electronics	SIHB23N60E-GE3		1,010			1 $3.38 10 $3.34 100 $1.77 1000 $1.76 10000 $1.76	Buy Now
Newark	SIHB23N60E-GE3	Bulk			1	1 $3.52 10 $3.38 100 $2.08 1000 $2.08 10000 $2.08	Buy Now
TME	SIHB23N60E-GE3				1	1 $3.44 10 $3.09 100 $2.46 1000 $2.29 10000 $2.29	Get Quote
EBV Elektronik	SIHB23N60E-GE3			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHB23N60E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHB23N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 23A D2PAK		Original	PDF

SIHB23N60E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single Low figure-of-merit (FOM) Ron x Qg	Original	SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHB23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHB23N60E AN609, 6382m 4591m 1934u 0976m 05-Apr-13	PDF
Untitled Abstract: No abstract text available Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses	Original	SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses	Original	SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF