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    SIHB23N60E Price and Stock

    Vishay Siliconix SIHB23N60E-GE3

    MOSFET N-CH 600V 23A D2PAK
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    DigiKey SIHB23N60E-GE3 Tube 1
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    Vishay Intertechnologies SIHB23N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHB23N60E-GE3)
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    Avnet Americas SIHB23N60E-GE3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHB23N60E-GE3 1,035
    • 1 $3.03
    • 10 $2.76
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    Newark SIHB23N60E-GE3 Bulk 1
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    TME SIHB23N60E-GE3 1
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    EBV Elektronik SIHB23N60E-GE3 19 Weeks 50
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    SIHB23N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB23N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 23A D2PAK Original PDF

    SIHB23N60E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB23N60E AN609, 6382m 4591m 1934u 0976m 05-Apr-13

    Untitled

    Abstract: No abstract text available
    Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		PDF SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		PDF SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12