SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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SAMSUNG MCP
Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.
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KBC00B7A0M
16Mx16)
4Mx16)
512Kx16)
100pF
111-Ball
SAMSUNG MCP
MCP MEMORY
dQ8F
SAMSUNG MCP Qualification Report
MCP NAND
SAMSUNG 256Mb mcp Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
UtRAM Density
MCP Samsung
SAMSUNG NOR Flash Qualification Report
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Samsung K9F5608U0D PCB0
Abstract: K9F5608U0D K9F5608U0D-P K9F5608U0D-FCB0 pcb0
Text: K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY K9F5608X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F5608R0D
K9F5608U0D
K9F5608D0D
K9F5608X0D
Samsung K9F5608U0D PCB0
K9F5608U0D-P
K9F5608U0D-FCB0
pcb0
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary
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HY27UF
HY27SF
128Mx8bit
64Mx16bit)
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HY27UG082
Abstract: No abstract text available
Text: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004
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HY27UG
HY27SG
256Mx8bit
128Mx16bit)
table14)
HY27UG082
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K9K1208D0C
Abstract: K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C
Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
20mA--
30mry
K9K1208D0C
K9K1208Q0C
K9K1208U0C
K9K1208U0C-HCB0
K9K1216D0C
K9K1216Q0C
K9K1216U0C
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HY27US08121
Abstract: No abstract text available
Text: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary
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HY27US
HY27SS
512Mbit
64Mx8bit
32Mx16bit)
HY27US08121
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HY27UF084
Abstract: hynix nand flash 4Gb HY27UF084G2M 52-ULGA
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
HY27UF084
hynix nand flash 4Gb
52-ULGA
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HY27US08121A
Abstract: HY27 HY27US hynix nand spare area
Text: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary
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HY27US
HY27SS
512Mbit
64Mx8bit
32Mx16bit)
HY27US08121A
HY27
hynix nand spare area
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HY27UG088G5M
Abstract: HY27UG088G5 HY27UG088G2M HY27U*G5M HY27UG088G HY270 HY27UG HY27UG088GDM HY27UG088G2M-TP WP 39
Text: Preliminary HY27UG088G 2/5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G2M HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UG088G
HY27UG088G2M
HY27UG088G5M
HY27UG088GDM
HY27UG088GDM
HY27UG088G5M
HY27UG088G5
HY27UG088G2M
HY27U*G5M
HY270
HY27UG
HY27UG088G2M-TP
WP 39
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SL754
Abstract: X110 ptc E124 E184 BTx84 SL87H IA32Exec intel 8082 X179 Intel Itanium
Text: Intel Itanium® Processor Specification Update April 2009 Notice: The Intel® Itanium® processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this specification update.
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IA-32
SL754
X110 ptc
E124
E184
BTx84
SL87H
IA32Exec
intel 8082
X179
Intel Itanium
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Samsung NAND
Abstract: K9K1216U0C
Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
20mA--
Samsung NAND
K9K1216U0C
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Untitled
Abstract: No abstract text available
Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
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512Mb/256Mb
K9F1208Q0A-XXB0,
K9F1216Q0A-XXB0
K9F5608Q0C-XXB0,
K9F5616Q0C-XXB0
K9K1208Q0C-XXB0,
K9K1216Q0C-XXB0
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K9K1208X0C
Abstract: SAMSUNG 256Mb NAND Flash Qualification Report Samsung NAND
Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
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512Mb/256Mb
K9F1208Q0A-XXB0,
K9F1216Q0A-XXB0
K9F5608Q0C-XXB0,
K9F5616Q0C-XXB0
K9K1208Q0C-XXB0,
K9K1216Q0C-XXB0
K9K1208X0C
SAMSUNG 256Mb NAND Flash Qualification Report
Samsung NAND
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K9F5608U0C-PCB0
Abstract: K9F5608D0C lockpre K9F5608U0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C
Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
K9F5608U0C-PCB0
K9F5608D0C
lockpre
K9F5608U0C
K9F5608Q0C
K9F5608Q0C-HCB0
K9F5608U0C-FCB0
K9F5616D0C
K9F5616Q0C
K9F5616U0C
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FBGA 63
Abstract: No abstract text available
Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary
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HY27UF
HY27SF
128Mx8bit
64Mx16bit)
Chan48-lead
FBGA 63
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hynix nand flash otp
Abstract: No abstract text available
Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary
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HY27UF
HY27SF
128Mx8bit
64Mx16bit)
FBGA63
hynix nand flash otp
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256Mx16bit
Abstract: W352 hy27uh084g2m
Text: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
256Mx16bit
W352
hy27uh084g2m
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hynix nand flash otp
Abstract: HY27UG088G HY27UG088G5M HY27UG088G5 hynix nand 8G uLGA hynix nand flash HY27UG088
Text: HY27UG088G 5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UG088G
HY27UG088G5M
HY27UG088GDM
HY27UG088GDM
hynix nand flash otp
HY27UG088G5M
HY27UG088G5
hynix nand 8G
uLGA
hynix nand flash
HY27UG088
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Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.
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AN1838
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
Samsung k9f1208u
SAMSUNG NAND FLASH
samsung nand
WSOP48
K9F28
NAND FLASH BGA
samsung 1Gb nand flash
NAND01G cache program
"NAND Flash"
128M NAND Flash Memory
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HY27Us08121a
Abstract: HY27US HY27 48-TSOP1 HY27US08121
Text: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary
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HY27US
HY27SS
512Mbit
64Mx8bit
32Mx16bit)
HY27Us08121a
HY27
48-TSOP1
HY27US08121
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63 ball fbga
Abstract: No abstract text available
Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
20mA--
63 ball fbga
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K9K1208D0C
Abstract: K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C
Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
20mA--
30mry
K9K1208D0C
K9K1208Q0C
K9K1208U0C
K9K1208U0C-HCB0
K9K1216D0C
K9K1216Q0C
K9K1216U0C
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K9F5608U0C
Abstract: K9F5608D0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C K9F5616U0C-HCB0 K9F5616U0C-PCB0
Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
K9F5608U0C
K9F5608D0C
K9F5608Q0C
K9F5608Q0C-HCB0
K9F5608U0C-FCB0
K9F5616D0C
K9F5616Q0C
K9F5616U0C
K9F5616U0C-HCB0
K9F5616U0C-PCB0
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